机构

• 半导体研究所 [7]
• 长春光学精密机械与物... [2]
• 苏州纳米技术与纳米仿... [1]

采集方式

• OAI收割 [8]
• iSwitch采集 [2]

内容类型

• 期刊论文 [7]
• 会议论文 [3]

发表日期

• 2014 [1]
• 2013 [1]
• 2010 [2]
• 2009 [1]
• 2008 [1]
• 2001 [2]
• 更多

学科主题

• 半导体物理 [3]
• 光电子学 [2]

筛选

浏览/检索结果: 共10条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Demonstration of Normally-Off Recess-Gated AlGaN/GaN MOSFET Using GaN Cap Layer as Recess Mask 期刊论文  OAI收割 IEEE ELECTRON DEVICE LETTERS, 2014, 卷号: 35, 期号: 12, 页码: 1197-1199 作者:  Cai, Y (蔡勇) 收藏  |  浏览/下载：26/0  |  提交时间：2015/02/03 Self-terminating  normally-off  AlGaN/GaN MOSFET  GaN cap layer  gate recess  recess mask   Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文  OAI收割 2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China 作者:  Zhang T. 收藏  |  浏览/下载：31/0  |  提交时间：2013/03/25 InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.   The exciton-longitudinal-optical-phonon coupling in ingan/gan single quantum wells with various cap layer thicknesses 期刊论文  iSwitch采集 Chinese physics b, 2010, 卷号: 19, 期号: 11, 页码: 5 作者:  Hu Xiao-Long;  Zhang Jiang-Yong;  Shang Jing-Zhi;  Liu Wen-Jie;  Zhang Bao-Ping 收藏  |  浏览/下载：34/0  |  提交时间：2019/05/12 Exciton-longitudinal-optical-phonon  Ingan/gan single quantum well  Gan cap layer  Huang-rhys factor   The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 11, 页码: art. no. 117801 Hu XL (Hu Xiao-Long); Zhang JY (Zhang Jiang-Yong); Shang JZ (Shang Jing-Zhi); Liu WJ (Liu Wen-Jie); Zhang BP (Zhang Bao-Ping) 收藏  |  浏览/下载：48/0  |  提交时间：2010/12/28 exciton-longitudinal-optical-phonon  InGaN/GaN single quantum well  GaN cap layer  Huang-Rhys factor   Evolution of surface morphology and photoluminescence characteristics of 1.3-mu m In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy 期刊论文  OAI收割 chinese optics letters, 2009, 卷号: 7, 期号: 1, 页码: 52-55 Wei QX; Ren ZW; He ZH; Niu ZC 收藏  |  浏览/下载：90/0  |  提交时间：2010/03/08 1.3 MU-M  ROOM-TEMPERATURE  OPTICAL-PROPERTIES  CAP LAYER  GAAS  DEPOSITION   Optical characteristic of ion beam sputter deposited aluminum thin films (EI CONFERENCE) 会议论文  OAI收割 International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Optoelectronic System Design, Manufacturing, and Testings, September 9, 2007 - September 12, 2007, Beijing, China 作者:  Yang H.;  Liu L.;  Liu L. 收藏  |  浏览/下载：28/0  |  提交时间：2013/03/25 Aluminum is a typical active metal very easy to oxidize. An oxide surface layer of about 2-6nm quickly formed in air which adds difficulty to the optical constants determination. An ex-situ method is used to determine the optical constants of aluminum thin films. First  Second  Third  alumina (Al2O3) thin film is deposited by ion beam sputter deposition. The optical constants and thickness are determined by spectral ellipsoemtry (SE). The thickness is verified by grazing x-ray reflection (GXRR) fitting method  Al thin film with an Al2O3 cap layer on top is deposited. This cap layer is of the same deposition condition with the first step. By fitting the GXRR spectra  based on the acquired structure information  the structure information (the thickness of the aluminum and the cap layer  the ellipsometric spectra are fitted. The optical constants of the aluminum layer are extracted with the aid of the Drude model. Finally  surface roughness and the diffusion between Al-Al2O 3) is obtained  an induced transmission filter (ITF) is designed and deposited.   Photoluminescence characterization of 1.3 mu m In(Ga)As/GaAs islands grown by molecular beam epitaxy 会议论文  OAI收割 10th international conference on narrow gap semiconductors and related small energy phenomena, physics and applications (ngs10), kanazawa, japan, may 27-31, 2001 Niu ZC; Wang XD; Miao ZH; Lan Q; Kong YC; Zhou DY; Feng SL 收藏  |  浏览/下载：18/0  |  提交时间：2010/10/29 molecular beam epitaxy  InGaAs islands  photolumineseence  line-width  1.3 MU-M  INAS/GAAS QUANTUM DOTS  OPTICAL-PROPERTIES  CAP LAYER  GAAS  LUMINESCENCE  STRAIN   A narrow photoluminescence linewidth of 19.2 meV at 1.35 mu m from In0.5Ga0.5As/GaAs quantum island structure grown by molecular beam epitaxy 期刊论文  OAI收割 chinese physics letters, 2001, 卷号: 18, 期号: 4, 页码: 608-610 Wang XD; Niu ZC; Feng SL; Miao ZH 收藏  |  浏览/下载：99/5  |  提交时间：2010/08/12 OPTICAL-PROPERTIES  ROOM-TEMPERATURE  CAP LAYER  DOTS  GAAS  LUMINESCENCE   Study of self-assembled inas quantum dot structure covered by inxga1-xas(0 <= x <= 0.3) capping layer 期刊论文  iSwitch采集 Acta physica sinica, 2000, 卷号: 49, 期号: 11, 页码: 2230-2234 作者:  Wang, XD;  Liu, HY;  Niu, ZC;  Feng, SL 收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12 Quantum dots  Cap layer  Strain-reducing  Redshift   Study of self-assembled InAs quantum dot structure covered by InxGa1-xAs(0 <= x <= 0.3) capping layer 期刊论文  OAI收割 acta physica sinica, 2000, 卷号: 49, 期号: 11, 页码: 2230-2234 Wang XD; Liu HY; Niu ZC; Feng SL 收藏  |  浏览/下载：46/0  |  提交时间：2010/08/12 quantum dots  cap layer  strain-reducing  redshift  MU-M  EMISSION  INGAAS