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CAS IR Grid
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半导体研究所 [35]
物理研究所 [5]
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期刊论文 [39]
会议论文 [4]
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2011 [1]
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2002 [6]
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半导体材料 [17]
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MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers
期刊论文
OAI收割
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:
Jia CH
;
Song HP
收藏
  |  
浏览/下载:130/2
  |  
提交时间:2011/07/05
Anisotropy
Crystal morphology
Metalorganic chemical vapor deposition
a-Plane InN
INDIUM NITRIDE
MOVPE GROWTH
CUBIC INN
SAPPHIRE
GAN
MBE
Elastic and thermodynamic properties of c-BN from first-principles calculations
期刊论文
OAI收割
Chinese Physics, 2007, 卷号: 16, 期号: 1, 页码: 217-222
Y. J. Hao
;
Y. Cheng
;
Y. J. Wang
;
X. R. Chen
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2012/04/13
elastic constants
thermodynamic properties
local density
approximation
c-BN
cubic boron-nitride
superconducting mgb2
zincblende bn
constants
phase
aln
gan
transition
pressure
inn
First-principles calculations of elastic constants of c-BN
期刊论文
OAI收割
Physica B-Condensed Matter, 2006, 卷号: 382, 期号: 1-2, 页码: 118-122
Y. J. Hao
;
X. R. Chen
;
H. L. Cui
;
Y. L. Bai
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2012/04/13
elastic constants
local density approximation
Debye temperature
thermal expansion coefficients
c-BN
cubic boron-nitride
molecular-dynamics simulation
thermodynamic
properties
structural-properties
superconducting mgb2
thermal-expansion
zincblende bn
gan
aln
phase
Scanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth
期刊论文
OAI收割
PHYSICS-USPEKHI, 2004, 卷号: 47, 期号: 4, 页码: 371
Bakhtizin, RZ
;
Xue, QZ
;
Xue, QK
;
Wu, KH
;
Sakurai, T
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2013/09/24
MOLECULAR-BEAM EPITAXY
ENERGY ELECTRON-DIFFRACTION
COVERED GAN(0001) SURFACES
LIGHT-EMITTING DIODES
CUBIC GAN
ATOMIC-STRUCTURE
GAN(000(1)OVER-BAR) SURFACE
LATTICE POLARITY
SINGLE-CRYSTALS
SILICON-CARBIDE
Design of high brightness cubic-gan leds grown on gaas substrate
期刊论文
iSwitch采集
Journal of the korean physical society, 2003, 卷号: 42, 页码: S753-s756
作者:
Sun, YP
;
Shen, XM
;
Zhang, ZH
;
Zhao, DG
;
Feng, ZH
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2019/05/12
Wafer bunding
Cubic gan
Selective area growth of GaN on GaAs(001) substrates by metalorganic vapor-phase epitaxy
期刊论文
OAI收割
journal of crystal growth, 2003, 卷号: 252, 期号: 1-3, 页码: 9-13
Shen XM
;
Feng G
;
Zhang BS
;
Duan LH
;
Wang YT
;
Yang H
收藏
  |  
浏览/下载:51/0
  |  
提交时间:2010/08/12
scanning electron microscopy
X-ray diffraction
Metalorganic vapor phase epitaxy
selective area growth
gallium nitride
CUBIC GAN
OVERGROWN GAN
DEPOSITION
GAAS(100)
Design of high brightness cubic-GaN LEDs grown on GaAs substrate
会议论文
OAI收割
11th seoul international symposium on the physics of semiconductors and applications, seoul, south korea, aug 20-23, 2002
作者:
Zhao DG
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2010/11/15
wafer bunding
cubic GaN
LIGHT-EMITTING-DIODES
FIELD-EFFECT TRANSISTOR
SINGLE-CRYSTAL GAN
MICROWAVE PERFORMANCE
MIRROR
JUNCTION
Design of high brightness cubic-GaN LEDs grown on GaAs substrate
期刊论文
OAI收割
journal of the korean physical society, 2003, 卷号: 42, 期号: 0, 页码: s753-s756
作者:
Zhao DG
收藏
  |  
浏览/下载:65/0
  |  
提交时间:2010/08/12
wafer bunding
cubic GaN
LIGHT-EMITTING-DIODES
FIELD-EFFECT TRANSISTOR
SINGLE-CRYSTAL GAN
MICROWAVE PERFORMANCE
MIRROR
JUNCTION
X-ray diffraction analysis of MOCVD grown GaN buffer layers on GaAs(001) substrates
期刊论文
OAI收割
journal of crystal growth, 2003, 卷号: 254, 期号: 1-2, 页码: 23-27
Shen XM
;
Wang YT
;
Zheng XH
;
Zhang BS
;
Chen J
;
Feng G
;
Yang H
收藏
  |  
浏览/下载:117/0
  |  
提交时间:2010/08/12
buffer layers
x-ray diffraction
metalorganic chemical vapor deposition
nitrides
VAPOR-PHASE EPITAXY
NUCLEATION LAYERS
CUBIC GAN
(001)GAAS SUBSTRATE
STRAIN RELAXATION
TEMPERATURE
DEPOSITION
QUALITY
DIODES
Ecr plasma in growth of cubic gan by low pressure mocvd
期刊论文
iSwitch采集
Plasma chemistry and plasma processing, 2002, 卷号: 22, 期号: 1, 页码: 159-174
作者:
Gu, B
;
Xu, Y
;
Qin, FW
;
Wang, SS
;
Sui, Y
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2019/05/12
Ecr plasma
Cubic gan
Low pressure mocvd