机构

• 金属研究所 [2]
• 武汉岩土力学研究所 [2]
• 半导体研究所 [2]
• 长春光学精密机械与物... [1]
• 武汉病毒研究所 [1]

采集方式

• OAI收割 [6]
• iSwitch采集 [2]

内容类型

• 期刊论文 [7]
• 会议论文 [1]

发表日期

• 2022 [2]
• 2011 [1]
• 2010 [2]
• 2008 [1]
• 2003 [2]

学科主题

• Engineerin... [2]
• Geology [2]
• 半导体物理 [1]

筛选

浏览/检索结果: 共8条，第1-8条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Development of a Real-Time Monitoring and Calculation Method for TBM Disc-Cutter's Cutting Force in Complex Ground 期刊论文  OAI收割 GEOTECHNICAL TESTING JOURNAL, 2022, 卷号: 45, 期号: 5, 页码: 961 作者:  Huang, Xing;  Wang, Shaohua;  Liu, Quansheng;  Wang, Xinyu;  Liu, Bin   |  收藏  |  浏览/下载：15/0  |  提交时间：2023/08/02 tunnel boring machine  cutting forces  real-time monitoring  cylindrical strain gauges multi-de- gree-of-freedom coupled vibration differential equation  Wilson-theta inverse analysis method   Development of a Real-Time Monitoring and Calculation Method for TBM Disc-Cutter's Cutting Force in Complex Ground 期刊论文  OAI收割 GEOTECHNICAL TESTING JOURNAL, 2022, 卷号: 45, 期号: 5, 页码: 961 作者:  Huang, Xing;  Wang, Shaohua;  Liu, Quansheng;  Wang, Xinyu;  Liu, Bin   |  收藏  |  浏览/下载：13/0  |  提交时间：2023/08/02 tunnel boring machine  cutting forces  real-time monitoring  cylindrical strain gauges multi-de- gree-of-freedom coupled vibration differential equation  Wilson-theta inverse analysis method   Evaluation of a real-time rt-pcr assay using minor groove binding probe for specific detection of chinese wild-type classical swine fever virus 期刊论文  iSwitch采集 Journal of virological methods, 2011, 卷号: 176, 期号: 1-2, 页码: 96-102 作者:  Wen, Guoyuan;  Zhang, Tao;  Yang, Jun;  Luo, Qingping;  Liao, Yonghong 收藏  |  浏览/下载：70/0  |  提交时间：2019/05/09 Classical swine fever virus  Real-time rt-pcr  Differential diagnosis  Wild-type strain  Hclv strain   Yield Strength of Transparent MgAl2O4 Nano-Ceramic at High Pressure and Temperature 期刊论文  OAI收割 NANOSCALE RESEARCH LETTERS, 2010, 卷号: 5, 期号: 8, 页码: 1329-1332 作者:  Zhang, Jie;  Lu, Tiecheng;  Chang, Xianghui;  Jiang, Shengli;  Wei, Nian   |  收藏  |  浏览/下载：56/0  |  提交时间：2021/02/02 Transparent MgAl2O4 nano-ceramics  High pressure/temperature  Differential strain  Yield strength  Stress relaxation   Yield Strength of Transparent MgAl(2)O(4) Nano-Ceramic at High Pressure and Temperature 期刊论文  OAI收割 Nanoscale Research Letters, 2010, 卷号: 5, 期号: 8, 页码: 1329-1332 J. Zhang; T. C. Lu; X. H. Chang; S. L. Jiang; N. A. Wei; J. Q. Qi 收藏  |  浏览/下载：25/0  |  提交时间：2012/04/13 Transparent MgAl(2)O(4) nano-ceramics  High pressure/temperature  Differential strain  Yield strength  Stress relaxation  spinel  thermomechanics  powder  size   808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者:  Wang Y.;  Wang L.;  Wang L.;  Wang L.;  Liu Y. 收藏  |  浏览/下载：23/0  |  提交时间：2013/03/25 808nm high power diode lasers  which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems  have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers  and they could lead to new applications where space  weight and electrical power are critical. High efficiency devices generate less waste heat  which means less strain on the cooling system and more tolerance to thermal conductivity variation  a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s  1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars  we fabricate a 1 3 arrays  the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A  the slope efficiency is 3.37 W/A. 2008 SPIE.   Effect of different type intermediate layers on band structure and gain of ga1-xinxnyas1-y-gaas quantum well lasers 期刊论文  iSwitch采集 Ieee photonics technology letters, 2003, 卷号: 15, 期号: 10, 页码: 1336-1338 作者:  Zhang, W 收藏  |  浏览/下载：28/0  |  提交时间：2019/05/12 Band structure  Differential gain  Gainnas  Optical gain  Strain compensated  Strain mediated   Effect of different type intermediate layers on band structure and gain of Ga1-xInxNyAs1-y-GaAs quantum well lasers 期刊论文  OAI收割 ieee photonics technology letters, 2003, 卷号: 15, 期号: 10, 页码: 1336-1338 作者:  Xu YQ 收藏  |  浏览/下载：407/1  |  提交时间：2010/08/12 band structure  differential gain  GaInNAs  optical gain  strain compensated  strain mediated  STRAIN  TEMPERATURE  DIODES  ALLOYS  OFFSET