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浏览/检索结果: 共53条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Modeling and Optimization of Low-Power AND Gates Based on Stochastic Thermodynamics 期刊论文  OAI收割 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2022, 卷号: 69, 期号: 9, 页码: 3729-3733 作者:  Kuang, Jiayue;  Ge, Xiaohu;  Yang, Yang;  Tian, Lin   |  收藏  |  浏览/下载：46/0  |  提交时间：2022/12/07 Logic gates  Transistors  Energy states  Thermodynamics  Voltage  Energy consumption  Integrated circuit modeling  Stochastic thermodynamics  subthreshold voltage  single-electron transistor  AND gate  order of operations   Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector 期刊论文  OAI收割 CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 4 作者:  Li, Jin-Lun;  Cui, Shao-Hui;  Xu, Jian-Xing;  Cui, Xiao-Ran;  Guo, Chun-Yan   |  收藏  |  浏览/下载：53/0  |  提交时间：2018/05/14 Thz Detector  High Electron Mobility Transistor  Two-dimensional Electron Gas  Inp   Growth condition optimization and mobility enhancement through prolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure 期刊论文  OAI收割 CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 9, 页码: 4 作者:  He, XG;  Zhao, DG;  Jiang, DS;  Zhu, JJ;  Chen, P 收藏  |  浏览/下载：24/0  |  提交时间：2015/12/31 high electron mobility transistor  two-dimensional electron gas  GaN   Investigation of high sensitivity radio-frequency readout circuit based on AlGaN/GaN high electron mobility transistor 期刊论文  OAI收割 CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 10, 页码: 4 作者:  Zhang, XY(张晓渝);  Tan, RB(谭仁兵);  Sun, JD(孙建东);  Li, XX(李欣幸);  Zhou, Y(周宇) 收藏  |  浏览/下载：36/0  |  提交时间：2015/12/31 radio-frequency circuit  high electron mobility transistor   Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation 期刊论文  OAI收割 IEEE ELECTRON DEVICE LETTERS, 2015, 卷号: 36, 期号: 11, 页码: 4 作者:  Zhang, ZL(张志利);  Fu, K(付凯);  Deng, XG(邓旭光);  Zhang, XD(张晓东);  Fan, YM(范亚明) 收藏  |  浏览/下载：83/0  |  提交时间：2015/12/31 AlGaN/GaN high electron mobility transistor (HEMT)  standard fluorine ion implantation  normally off   Mapping an on-chip terahertz antenna by a scanning near-field probe and a fixed field-effect transistor 期刊论文  OAI收割 CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 2, 页码: 5 作者:  Lu, L;  Sun, JD（孙建东）;  Lewis, RA;  Sun, YF（孙云飞）;  Wu, DM(吴东岷) 收藏  |  浏览/下载：49/0  |  提交时间：2015/12/31 terahertz detector  terahertz antenna  near-field probe  high electron mobility transistor   Research on biomolecule-gate AlGaN/GaN high-electron-mobility transistor biosensors 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2014, 卷号: 63, 期号: 7 作者:  Wu, DM (吴东岷);  Li, JD (李加东) 收藏  |  浏览/下载：34/0  |  提交时间：2015/02/03 two-dimensional electron gas  high electron mobility transistor  biosensor  prostate specific antigen   25th Anniversary Article: Recent Advances in n-Type and Ambipolar Organic Field-Effect Transistors 期刊论文  OAI收割 ADVANCED MATERIALS, 2013, 卷号: 25, 期号: 38, 页码: 5372-5391 作者:  Zhao, Yan;  Guo, Yunlong;  Liu, Yunqi   |  收藏  |  浏览/下载：24/0  |  提交时间：2019/04/09 Organic Field-effect Transistor  N-type  Ambipolar  Electron Transporting   High performance Langmuir-Schaeffer film transistors based on air stable n-type diperylene bisimide 期刊论文  OAI收割 ORGANIC ELECTRONICS, 2013, 卷号: 14, 期号: 10, 页码: 2610-2616 作者:  Liu, Huiying;  Wu, Yishi;  Wang, Zhaohui;  Fu, Hongbing   |  收藏  |  浏览/下载：28/0  |  提交时间：2019/04/09 Langmuir-schaeffer Film  Di(Perylene Bisimide)  Field-effect Transistor  Electron Mobility  Interface   A Double-Gate AlGaN/GaN HEMT With Improved Dynamic Performance 期刊论文  OAI收割 IEEE ELECTRON DEVICE LETTERS, 2013, 卷号: 34, 期号: 6, 页码: 747-749 作者:  Cai, Y(蔡勇);  Zhao, DS(赵德胜);  Qin, H(秦华);  Zhang, BS(张宝顺);  Zeng, CH(曾春红) 收藏  |  浏览/下载：42/0  |  提交时间：2013/12/30 AlGaN/GaN high electron mobility transistor (HEMT)  dynamic performance  power device