机构

• 半导体研究所 [7]

采集方式

• OAI收割 [7]

内容类型

• 期刊论文 [4]
• 会议论文 [3]

发表日期

• 2006 [1]
• 2004 [3]
• 2003 [1]
• 2002 [2]

学科主题

• 半导体材料 [6]
• 半导体物理 [1]

筛选

浏览/检索结果: 共7条，第1-7条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Recent research results on deep level defects in semi-insulating InP - Application to improve material quality 会议论文  OAI收割 12th international conference on indium phosphide and related materials, princeton, nj, may 07-11, 2006 Zhao, YW (Zhao, Youwen); Dong, ZY (Dong, Zhiyuan); Dong, HW (Dong, Hongwei); Sun, NF (Sun, Niefeng); Sun, TN (Sun, Tongnian) 收藏  |  浏览/下载：66/12  |  提交时间：2010/03/29 STIMULATED CURRENT SPECTROSCOPY  CURRENT TRANSIENT SPECTROSCOPY  FE-DOPED INP  POINT-DEFECTS  COMPENSATION  TEMPERATURE  DONORS  TRAPS   Shallow donor defect formation and its influence on semi-insulating indium phosphide after high temperature annealing with long duration 会议论文  OAI收割 13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004 Zhao, YW; Dong, ZY; Zhang, YH; Li, CJ 收藏  |  浏览/下载：181/52  |  提交时间：2010/03/29 DEEP-LEVEL DEFECTS  FE-DOPED INP  GROWN INP  SPECTROSCOPY  RESONANCE  WAFER   Annealing ambient controlled deep defect formation in InP 会议论文  OAI收割 10th international conference on defects - recognition, imaging and physics in semiconductors (drip 10), batz sur mer, france, sep 29-oct 02, 2003 Zhao YW; Dong ZY; Duan ML; Sun WR; Zeng YP; Sun NF; Sun TN 收藏  |  浏览/下载：31/1  |  提交时间：2010/10/29 FE-DOPED INP  SEMIINSULATING INP  POINT-DEFECTS  PRESSURE  WAFERS  TRAPS   Annealing ambient controlled deep defect formation in InP 期刊论文  OAI收割 european physical journal-applied physics, 2004, 卷号: 27, 期号: 1-3, 页码: 167-169 Zhao, YW; Dong, ZY; Duan, ML; Sun, WR; Zeng, YP; Sun, NF; Sun, TN 收藏  |  浏览/下载：370/63  |  提交时间：2010/03/09 FE-DOPED INP   Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances 期刊论文  OAI收割 journal of crystal growth, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7 Dong ZY; Zhao YW; Zeng YP; Duan ML; Sun WR; Jiao JH; Lin LY 收藏  |  浏览/下载：365/16  |  提交时间：2010/08/12 annealing  defects  etching  semiconducting indium phosphide  FE-DOPED INP  SEMIINSULATING INP  INDIUM-PHOSPHIDE  DEFECTS  DIFFUSION  CRYSTALS  WAFERS   Photoluminescence assessment of undoped semi-insulating InP wafers obtained by annealing in iron phosphide vapour 期刊论文  OAI收割 semiconductor science and technology, 2002, 卷号: 17, 期号: 6, 页码: 570-574 Dong HW; Zhao YW; Lu HP; Jiao JH; Zhao JQ; Lin LY 收藏  |  浏览/下载：63/0  |  提交时间：2010/08/12 FE-DOPED INP  SEMIINSULATING INP  ELECTRICAL-PROPERTIES  ROOM-TEMPERATURE  UNIFORMITY  PRESSURE  INGOT   Deep levels in semi-insulating InP obtained by annealing under iron phosphide ambiance 期刊论文  OAI收割 journal of applied physics, 2002, 卷号: 92, 期号: 4, 页码: 1968-1970 Dong HW; Zhao YW; Zhang YH; Jiao JH; Zhao JQ; Lin LY 收藏  |  浏览/下载：75/15  |  提交时间：2010/08/12 FE-DOPED INP  SEMIINSULATING INP  UNDOPED INP  SPECTROSCOPY  WAFER  UNIFORMITY  PRESSURE  TRAPS