机构

• 光电技术研究所 [5]
• 上海微系统与信息技术... [3]
• 半导体研究所 [2]
• 长春光学精密机械与物... [1]

采集方式

• OAI收割 [10]
• iSwitch采集 [1]

内容类型

• 期刊论文 [10]
• 会议论文 [1]

发表日期

• 2013 [2]
• 2012 [1]
• 2009 [1]
• 2008 [3]
• 2006 [1]
• 2005 [1]
• 更多

学科主题

• Physics, M... [2]
• Applied [1]
• Physics [1]
• 光电子学 [1]

筛选

浏览/检索结果: 共11条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Carrier Diffusivity Measurement in Silicon Wafers Using Free Carrier Absorption 期刊论文  OAI收割 INTERNATIONAL JOURNAL OF THERMOPHYSICS, 2013, 卷号: 34, 期号: 8-9, 页码: 1721-1726 作者:  Zhang, Xiren;  Li, Bincheng 收藏  |  浏览/下载：23/0  |  提交时间：2015/04/17 Diffusivity  Free carrier absorption  Slope  Semiconductor   Characterization of Silicon Wafers with Combined Photocarrier Radiometry and Free Carrier Absorption 期刊论文  OAI收割 INTERNATIONAL JOURNAL OF THERMOPHYSICS, 2013, 卷号: 34, 期号: 8-9, 页码: 1735-1745 作者:  Li, Bincheng;  Huang, Qiuping;  Ren, Shengdong 收藏  |  浏览/下载：32/0  |  提交时间：2015/04/17 Electronic transport properties  Free carrier absorption  Ion implantation  Photocarrier radiometry  Silicon  Thermal annealing   Accuracy Improvement of Multi-parameter Estimation in Combined Photocarrier Radiometry and Free Carrier Absorption for Characterization of Silicon Wafers 期刊论文  OAI收割 INTERNATIONAL JOURNAL OF THERMOPHYSICS, 2012, 卷号: 33, 期号: 10-11, 页码: 2076-2081 作者:  Huang, Qiuping;  Li, Bincheng;  Ren, Shengdong 收藏  |  浏览/下载：18/0  |  提交时间：2015/07/10 Electronic transport properties  Free carrier absorption  Multi-parameter fitting  Photocarrier radiometry  Silicon   Modulated free carrier absorption characterization of semiconductor wafers by frequency scans at different pump-to-probe separations 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2009, 卷号: 58, 期号: 9, 页码: 6506-6511 作者:  Li Wei;  Li Bin-Cheng 收藏  |  浏览/下载：21/0  |  提交时间：2015/09/21 modulated free carrier absorption  electronic transport properties  frequency scans at different pump-to-probe separations  multi-parameter fitting   Measurement of electronic transport property of semiconductors by three-dimensional modulated free carrier absorption technique 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2008, 卷号: 57, 期号: 11, 页码: 7310-7316 作者:  Zhang Xi-Ren;  Li Bin-Cheng;  Liu Xian-Ming 收藏  |  浏览/下载：20/0  |  提交时间：2015/09/21 modulated free carrier absorption  electronic transport properties  radial scan   Narrow line-width resonant cavity enhanced photodetectors operating at 1.55 mu m 期刊论文  iSwitch采集 Optics communications, 2008, 卷号: 281, 期号: 6, 页码: 1582-1587 作者:  Mao, R. W.;  Tsai, C. S.;  Yu, J. Z.;  Wang, Q. M. 收藏  |  浏览/下载：31/0  |  提交时间：2019/05/12 Resonant cavity enhanced (rce)  Photodetector  Line-width  Free carrier absorption   Narrow line-width resonant cavity enhanced photodetectors operating at 1.55 mu m 期刊论文  OAI收割 optics communications, 2008, 卷号: 281, 期号: 6, 页码: 1582-1587 Mao, RW; Tsai, CS; Yu, JZ; Wang, QM 收藏  |  浏览/下载：46/1  |  提交时间：2010/03/08 resonant cavity enhanced (RCE)  photodetector  line-width  free carrier absorption   Optical absorption coefficients in two-dimensional semiconductors under strong magnetic field 期刊论文  OAI收割 JOURNAL OF APPLIED PHYSICS, 2006, 卷号: 99, 期号: 12, 页码: 123706-123706 Yu,LY; Cao,JC; Zhang,C 收藏  |  浏览/下载：37/0  |  提交时间：2011/12/17 PHONON SCATTERING RATES  FREE-CARRIER ABSORPTION  QUANTUM-WELLS  MAGNETOPHONON-RESONANCE  INTRABAND-ABSORPTION  HETEROSTRUCTURES  ELECTRONS  SINGLE  SYSTEM   Spontaneous emission and gain characteristics of InGaAs/InGaAsP quantum well laser (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Devices and Integration, November 8, 2004 - November 11, 2004, Beijing, China 作者:  Wang L.;  Wang L.;  Wang L. 收藏  |  浏览/下载：16/0  |  提交时间：2013/03/25 Long wavelength InGaAs/InGaAsP multiple quantum well laser is grown by MOCVD. The characteristics of spontaneous emission  amplified spontaneous emission and modal gain of the MQW is investigated by using single-pass multi-section technique. The amplified spontaneous emission is around a wavelength of 1500nm  dependent on the temperature and the current density. The modal gain spectra show a red shift with increasing temperature. The peak modal gain exhibits a decrease with increasing temperature from 140K to 300K. The loss measurements shows that the main loss mechanism in the structure might be the free carrier absorption in the doped cladding layers and a internal modal loss of about 10cm-1.   Resonant optical absorption in semiconductor quantum wells 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2004, 卷号: 21, 期号: 12, 页码: 2504-2506 Yu, LY; Cao, JC 收藏  |  浏览/下载：22/0  |  提交时间：2011/12/17 ELECTRON-PHONON INTERACTION  BALANCE-EQUATION APPROACH  FREE-CARRIER ABSORPTION  IMPACT IONIZATION  HETEROSTRUCTURES  COEFFICIENT  SCATTERING  GAAS