中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页
机构
成果
学者
登录
注册
登陆
×
验证码:
换一张
忘记密码?
记住我
×
校外用户登录
CAS IR Grid
机构
物理研究所 [12]
半导体研究所 [4]
金属研究所 [1]
采集方式
OAI收割 [16]
iSwitch采集 [1]
内容类型
期刊论文 [17]
发表日期
2010 [1]
2008 [2]
2006 [3]
2005 [3]
2004 [1]
2003 [2]
更多
学科主题
半导体物理 [2]
半导体材料 [1]
筛选
浏览/检索结果:
共17条,第1-10条
帮助
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
题名升序
题名降序
提交时间升序
提交时间降序
作者升序
作者降序
发表日期升序
发表日期降序
Wurtzite P-Doped GaN Triangular Microtubes as Field Emitters
期刊论文
OAI收割
Journal of Physical Chemistry C, 2010, 卷号: 114, 期号: 21, 页码: 9627-9633
L. T. Fu
;
Z. G. Chen
;
D. W. Wang
;
L. N. Cheng
;
H. Y. Xu
;
J. Z. Liu
;
H. T. Cong
;
G. Q. Lu
;
J. Zou
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2012/04/13
gallium nitride nanowires
vapor-phase epitaxy
emission properties
optical-properties
carbon nanotubes
cross-sections
growth
cathodoluminescence
nanorods
heterostructures
Rectifying behavior of individual SnO2 nanowire by different metal electrode contacts
期刊论文
OAI收割
MICROELECTRONIC ENGINEERING, 2008, 卷号: 85, 期号: 5-6, 页码: 1379
Chen, MM
;
Xia, XX
;
Wang, ZL
;
Li, YL
;
Li, JJ
;
Gu, CZ
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2013/09/24
GALLIUM NITRIDE NANOWIRE
TIN OXIDE NANOWIRES
SENSING PROPERTIES
Quasi-horizontal GaN nanowire array network grown by sublimation sandwich technique
期刊论文
OAI收割
APPLIED SURFACE SCIENCE, 2008, 卷号: 254, 期号: 20, 页码: 6637
Jian, JK
;
Wang, C
;
Lei, M
;
Zhang, ZH
;
Wang, TM
;
Chen, XL
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2013/09/24
GALLIUM NITRIDE NANOWIRES
RAMAN-SCATTERING
CATALYTIC GROWTH
NANORODS
VAPOR
NANOSENSORS
NANORIBBONS
STRAIGHT
EPITAXY
DEVICES
Fabrication of actinomorphic gan nanowires by sputtering and ammoniating progress
期刊论文
iSwitch采集
Journal of crystal growth, 2006, 卷号: 292, 期号: 2, 页码: 298-301
作者:
Tian, Deheng
;
Xue, Chengshan
;
Zhuang, Huizhao
;
Zhang, Xiaokai
;
Wu, Yuxin
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2019/05/12
Actinomorphic nanowires
Magnetic sputtering
Gallium nitride
Necktie-like ZnO nanobelts grown by a self-catalytic VLS process
期刊论文
OAI收割
MATERIALS LETTERS, 2006, 卷号: 60, 期号: 29-30, 页码: 3809
Jian, JK
;
Wang, C
;
Zhang, ZH
;
Chen, XL
;
Xu, LH
;
Wang, TM
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2013/09/24
GALLIUM NITRIDE NANOWIRES
SILICON NANOWIRES
SEMICONDUCTOR NANOWIRES
OXIDE NANOWIRES
GAN NANOWIRES
NANOSTRUCTURES
NANORINGS
MECHANISM
Al2O3 : Cr3+ nanotubes synthesized via homogenization precipitation followed by heat treatment
期刊论文
OAI收割
journal of physical chemistry b, 2006, 卷号: 110, 期号: 32, 页码: 15749-15754
Cheng BC (Cheng Baochang)
;
Qu SC (Qu Shengchun)
;
Zhou HY (Zhou Huiying)
;
Wang ZG (Wang Zhanguo)
收藏
  |  
浏览/下载:49/0
  |  
提交时间:2010/04/11
GALLIUM NITRIDE NANOTUBES
SINGLE-CRYSTALLINE
ALUMINA NANOTUBES
ALPHA-AL2O3 NANOWIRES
OXIDE NANOTUBES
ROUTE
FILMS
NANOSTRUCTURES
PHOTOLUMINESCENCE
TEMPERATURE
Growth and optical characterization of high-quality GaN nanobelts
期刊论文
OAI收割
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 283, 期号: 3-4, 页码: 418
Zhao, M
;
Chen, XL
;
Jian, JK
;
Zhang, XN
;
Zhao, HZ
;
Xu, YP
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2013/09/17
GALLIUM NITRIDE NANOBELTS
LIGHT-EMITTING DEVICES
RAMAN-SCATTERING
NANOWIRES
BLUE
NANORODS
SEMICONDUCTORS
POWDERS
DIODES
Synthesis of GaN nanotip triangle pyramids on 3C-SiC epilayer/Si substrates via an in situ In-doping technique
期刊论文
OAI收割
journal of chemical physics, 2005, 卷号: 122, 期号: 10, 页码: art.no.104713
Dai L
;
Liu SF
;
Fu ZX
;
You LP
;
Zhu JJ
;
Lin BX
;
Zhang JC
;
Qin GG
收藏
  |  
浏览/下载:66/0
  |  
提交时间:2010/03/17
GALLIUM NITRIDE NANOWIRES
Effects of In surfactant on the crystalline and photoluminescence properties of GaN nanowiires
期刊论文
OAI收割
journal of physics-condensed matter, 2005, 卷号: 17, 期号: 43, 页码: l445-l449
Dai L
;
Liu SF
;
You LP
;
Zhang JC
;
Qin GG
收藏
  |  
浏览/下载:115/17
  |  
提交时间:2010/03/17
GALLIUM NITRIDE NANOWIRES
Preparation and optical properties of prism-shaped GaN nanorods
期刊论文
OAI收割
JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 卷号: 108, 期号: 32, 页码: 12024
Jian, JK
;
Chen, XL
;
Tu, QY
;
Xu, YP
;
Dai, L
;
Zhao, M
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2013/09/24
GALLIUM NITRIDE NANOWIRES
RAMAN-SCATTERING
CATALYTIC GROWTH
NANOBELTS
CARBON
PHOTOLUMINESCENCE
SEMICONDUCTORS
DEFECTS