机构

• 半导体研究所 [4]
• 苏州纳米技术与纳米仿... [2]
• 物理研究所 [1]
• 金属研究所 [1]
• 高能物理研究所 [1]

采集方式

• OAI收割 [8]
• iSwitch采集 [1]

内容类型

• 期刊论文 [6]
• 会议论文 [3]

发表日期

• 2013 [3]
• 2011 [1]
• 2009 [3]
• 2008 [1]
• 2005 [1]

学科主题

• Chemistry;... [1]
• 光电子学 [1]
• 半导体材料 [1]
• 半导体物理 [1]

筛选

浏览/检索结果: 共9条，第1-9条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Terahertz filters based on frequency selective surfaces for high-speed terahertz switch 会议论文  OAI收割 5th International Symposium on Photoelectronic Detection and Imaging (ISPDI) - Terahertz Technologies and Applications, Beijing, PEOPLES R CHINA, JUN 25-27, 2013 作者:  Lu, SL（陆书龙）;  Zhang, ZP（张志鹏）;  Sun, JD（孙建东）;  Li, XX（李欣幸）;  Qin, H(秦华) 收藏  |  浏览/下载：70/0  |  提交时间：2014/01/15 2D plasmons  Terahertz time-domain spectroscopy  Fabry-Perot cavity  GaN/AlGaN heterostructure   Terahertz plasmon polariton formed in a Fabry-Perot cavity and a grating-coupled two-dimensional electron gas 会议论文  OAI收割 5th International Symposium on Photoelectronic Detection and Imaging (ISPDI) - Terahertz Technologies and Applications, Beijing, PEOPLES R CHINA, JUN 25-27, 2013 作者:  Huang, YD(黄永丹);  Zhang, BS(张宝顺);  Qin, H(秦华) 收藏  |  浏览/下载：34/0  |  提交时间：2014/01/15 2D plasmons  Fabry-Perot cavity  Terahertz time-domain spectroscopy  GaN/AlGaN heterostructure   Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor 期刊论文  OAI收割 CHINESE PHYSICS B, 2013, 卷号: 22, 期号: 6 Yu, YX; Lin, ZJ; Luan, CB; Wang, YT; Chen, H; Wang, ZG 收藏  |  浏览/下载：39/0  |  提交时间：2014/01/16 AlGaN/AlN/GaN heterostructure field-effect transistors  quasi-two-dimensional model  the polarization Coulomb field scattering  the two-dimensional electron gas mobility   Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN 期刊论文  OAI收割 applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: article no.102104 作者:  Deng QW 收藏  |  浏览/下载：57/5  |  提交时间：2011/07/05 QUANTUM-WELL-STRUCTURE  ALGAN/GAN HETEROSTRUCTURE  YELLOW LUMINESCENCE  DEEP LEVELS  TRAP  PERFORMANCE  FREQUENCY  EPILAYERS  ORIGIN  DIODES   Growth and characterization of algan/gan heterostructure using unintentionally doped aln/gan superlattices as barrier layer 期刊论文  iSwitch采集 Superlattices and microstructures, 2009, 卷号: 45, 期号: 2, 页码: 54-59 作者:  Zhang, M. L.;  Wang, X. L.;  Xiao, H. L.;  Wang, C. M.;  Yang, C. B. 收藏  |  浏览/下载：35/0  |  提交时间：2019/05/12 Algan/gan heterostructure  Superlattices (sls)  Root mean square roughness (rms)  Sheet resistance   Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer 期刊论文  OAI收割 SUPERLATTICES AND MICROSTRUCTURES, 2009, 卷号: 45, 期号: 2, 页码: 54-59 作者:  Zhang, M. L.;  Wang, X. L.;  Xiao, H. L.;  Wang, C. M.;  Yang, C. B.   |  收藏  |  浏览/下载：10/0  |  提交时间：2021/02/02 AlGaN/GaN heterostructure  Superlattices (SLs)  Root mean square roughness (RMS)  Sheet resistance   Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer 期刊论文  OAI收割 superlattices and microstructures, 2009, 卷号: 45, 期号: 2, 页码: 54-59 作者:  Zhang ML 收藏  |  浏览/下载：174/57  |  提交时间：2010/03/08 AlGaN/GaN heterostructure  Superlattices (SLs)  Root mean square roughness (RMS)  Sheet resistance   Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R 会议论文  OAI收割 conference on advanced materials and devices for sensing and imaging iii, beijing, peoples r china, nov 12-14, 2007 Wang, XH; Wan, XL; Xiao, HL; Feng, C; Way, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM 收藏  |  浏览/下载：39/0  |  提交时间：2010/03/09 hydrogen sensor  AlGaN/GaN heterostructure  Schottky diode   Microstrain in Al0.22Ga0.78N/GaN heterostructure studied by X-ray diffraction and scattering 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2005, 卷号: 397, 期号: 1-2, 页码: #REF! 作者:  Tan, WS;  Cai, HL;  Wu, XS;  Jiang, SS;  Zheng, WL 收藏  |  浏览/下载：23/0  |  提交时间：2016/04/12 AlGaN/GaN heterostructure  reciprocal space mappings  strain relaxation  grazing incidence X-ray diffraction