中国科学院机构知识库网格系统: 检索

Low-temperature (120 degrees C) growth of nanocrystalline silicon films prepared by plasma enhanced chemical vapor deposition from SiCl4/H-2 gases: Microstructure characterization 期刊论文 OAI收割
Applied Surface Science, 2012, 卷号: 258, 期号: 7, 页码: 3221-3226
L. Zhang; J. H. Gao; J. Q. Xiao; L. S. Wen; J. Gong; C. Sun

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Nanocrystalline silicon PECVD Microstructure Raman spectra hydrogenated amorphous-silicon thin-films raman-spectroscopy solar-cells mechanism sih2cl2

Design of an improved data signal timing for an amorphous silicon active-matrix organic LED display (EI CONFERENCE) 会议论文 OAI收割
ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China
作者: Zhang Z.-W.

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The most critical issue in the design of an active matrix organic light emitting diode (AM-OLED) display pixel is the pixel to the pixel luminance uniformity. By substituting four-thin film transistor (TFT) pixel circuit for two-TFT pixel circuit the luminous uniformity has great improved but it requires more components than the two-TFT pixel circuit. There are some barriers needed to resolve to utilize hydrogenated amorphous silicon transistor to lit OLED such as low field effect mobility low output current and threshold voltage shift. In this article a two-a-Si:H TFT pixel circuit was designed which consisted of one named switching TFT and the other named driving TFT. The driving TFT gate line structure modified and a data signal timing improved were reported. The modified driving TFT can provide enough current about 30 microampere to lit OLED and the novel data signal timing can provide a constant current to OLED by restraining the driving TFT threshold voltage variation. In the novel data signal timing the control signals to the driving TFT gate include a data signal and a reverse data signal. The signals alteration is performed either at a frame rate or at a line rate. By experiments the driving TFT output current value is plotted as a function of the time in different reversed voltage value. When the magnitude of the positive data signal and the negative data signal is equal the variety of Vth is smallest about 1.28V after a fixed stressing time of 1.33104min which shows the novel data signal timing can improved the driving TFT output-input current stability.

Silicon thin films prepared in the transition region and their use in solar cells 期刊论文 OAI收割
solar energy materials and solar cells, 2006, 卷号: 90, 期号: 18-19, 页码: 3001-3008
Zhang S (Zhang S.); Liao X (Liao X.); Raniero L (Raniero L.); Fortunato E (Fortunato E.); Xu Y (Xu Y.); Kong G (Kong G.); Aguas H (Aguas H.); Ferreira I (Ferreira I.); Martins R (Martins R.)

收藏 | 浏览/下载：66/0 | 提交时间：2010/04/11

silicon thin film solar cell HYDROGENATED AMORPHOUS-SILICON SI MICROSTRUCTURE

Preparation and characterization of the stable nc-Si/a-Si : H films 期刊论文 OAI收割
ACTA PHYSICA SINICA, 2003, 卷号: 52, 期号: 6, 页码: 1465
Xu, YY; Kong, GL; Zhang, SB; Hu, ZH; Zeng, XB; Diao, HW; Liao, XB

收藏 | 浏览/下载：27/0 | 提交时间：2013/09/24

HYDROGENATED AMORPHOUS-SILICON POLYMORPHOUS SILICON PHASE-TRANSITION STATES DILUTION

Preparation and characterization of the stable nc-Si/a-Si : H films 期刊论文 OAI收割
acta physica sinica, 2003, 卷号: 52, 期号: 6, 页码: 1465-1468
Xu YY; Kong GL; Zhang SB; Hu ZH; Zeng XB; Diao HW; Liao XB

收藏 | 浏览/下载：59/0 | 提交时间：2010/08/12

amorphous silicon microstructure light-induced changes HYDROGENATED AMORPHOUS-SILICON POLYMORPHOUS SILICON PHASE-TRANSITION STATES DILUTION

Anomalous emission and carrier effect of fresh porous silicon 期刊论文 OAI收割
CHEMICAL RESEARCH IN CHINESE UNIVERSITIES, 2002, 卷号: 18, 期号: 3, 页码: 270
Zou, BS; Wu, ZY; Cao, L; Dai, JH; Xie, SS; Wang, JP; El-Sayed, MA

收藏 | 浏览/下载：20/0 | 提交时间：2013/09/17

HYDROGENATED AMORPHOUS-SILICON QUANTUM DOTS LUMINESCENCE PHOTOLUMINESCENCE NANOCRYSTALS OXYGEN TEMPERATURE ABSORPTION MECHANISM SURFACE

The correlation between emission in freshly prepared porous silicon and the carrier density in silicon wafer 期刊论文 OAI收割
ASIAN JOURNAL OF SPECTROSCOPY, 2002, 卷号: 6, 期号: 1, 页码: 9
Zou, BS; Wang, JP; El-Sayed, MA

收藏 | 浏览/下载：11/0 | 提交时间：2013/09/23

HYDROGENATED AMORPHOUS-SILICON QUANTUM DOTS LUMINESCENCE PHOTOLUMINESCENCE NANOCRYSTALS OXYGEN TEMPERATURE MECHANISM SURFACE STATES

Correlation between Er3+ emission and the microstructure of a-SiOx : H < Er > films 期刊论文 OAI收割
international journal of modern physics b, 2002, 卷号: 16, 期号: 28-29, 页码: 4246-4249
Chen CY; Chen WD; Song SF; Hsu CC

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HYDROGENATED AMORPHOUS-SILICON PHOTOLUMINESCENCE LUMINESCENCE INTENSITY SYSTEM

Correlation between Er3+ emission and the microstructure of a-SiOx : H < Er > films 会议论文 OAI收割
symposium on silicon-based heterostructure materials held at the 8th iumrs international conference on electronic materials (iumrs-icem2002), xian, peoples r china, jun 10-14, 2002
Chen CY; Chen WD; Song SF; Hsu CC

收藏 | 浏览/下载：27/0 | 提交时间：2010/11/15

HYDROGENATED AMORPHOUS-SILICON PHOTOLUMINESCENCE LUMINESCENCE INTENSITY SYSTEM

Resonant Raman scattering of a-SiNx : H 期刊论文 OAI收割
MATERIALS LETTERS, 2001, 卷号: 47, 期号: 1-2, 页码: 50
Wang, Y; Yue, RF; Han, HX; Liao, XB; Wang, YQ; Diao, HW; Kong, GL

收藏 | 浏览/下载：28/0 | 提交时间：2013/09/24

POLYCRYSTALLINE DIAMOND FILMS AMORPHOUS-SILICON HYDROGENATED MICROCRYSTALLINE SPECTROSCOPY ALLOYS