机构

• 合肥物质科学研究院 [4]
• 高能物理研究所 [2]
• 金属研究所 [1]
• 上海微系统与信息技术... [1]
• 半导体研究所 [1]

采集方式

• OAI收割 [8]
• iSwitch采集 [1]

内容类型

• 期刊论文 [9]

发表日期

• 2017 [4]
• 2016 [2]
• 2012 [1]
• 2009 [1]
• 2006 [1]

学科主题

• Chemistry [1]
• 半导体物理 [1]

筛选

浏览/检索结果: 共9条，第1-9条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 716, 期号: 无, 页码: 1-6 作者:  He, Gang;  Jiang, Shanshan;  Li, Wendong;  Zheng, Changyong;  He, Huaxin 收藏  |  浏览/下载：44/0  |  提交时间：2018/05/25 High-k Gate Dielectric  Atomic-layer-deposition  Interface Stability  Phase Separation  Annealing Temperature   In situ study on the thermal stability and interfaces properties of er2o3/al2o3/si multi stacked films by x-ray photoelectron spectroscopy 期刊论文  iSwitch采集 Superlattices and microstructures, 2017, 卷号: 104, 页码: 415-421 作者:  Gao, Baolong;  Mamat, Mamatrishat;  Ghupur, Yasenjan;  Ablat, Abduleziz;  Ibrahim, Kurash 收藏  |  浏览/下载：44/0  |  提交时间：2019/04/23 High-k dielectric  Pld  Er2o3  Xps   Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al2O3/Si gate stack by annealing temperature 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 691, 期号: 无, 页码: 504-513 作者:  Gao, J.;  He, G.;  Liu, M.;  Lv, J. G.;  Sun, Z. Q. 收藏  |  浏览/下载：25/0  |  提交时间：2017/11/21 High-k Dielectric  Interface Thermal Stability  Atomic-layer-deposition  Band Alignment  Electrical Properties  Leakage Current Mechanism   In situ study on the thermal stability and interfaces properties of Er2O3/Al2O3/Si multi stacked films by X-ray photoelectron spectroscopy 期刊论文  OAI收割 SUPERLATTICES AND MICROSTRUCTURES, 2017, 卷号: 104, 页码: 415-421 作者:  Ablat, A;  Ibrahim, K;  Wang, JO;  Liu, C;  Zhao, JL   |  收藏  |  浏览/下载：32/0  |  提交时间：2019/08/27 High-k dielectric  PLD  Er2O3  XPS   Annealing Temperature Dependent Electrical Properties and Leakage Current Transport Mechanisms in Atomic Layer Deposition-Derived Al2O3-Incorporated HfO2/Si Gate Stack 期刊论文  OAI收割 JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 卷号: 16, 期号: 8, 页码: 8075-8082 作者:  Gao, Juan;  He, Gang;  Zhang, Jiwen;  Chen, Xuefei;  Jin, Peng 收藏  |  浏览/下载：26/0  |  提交时间：2017/11/21 High-k Gate Dielectric  Atomic Layer Deposition  Electrical Properties  Leakage Current Mechanism   Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 667, 期号: 无, 页码: 352-358 作者:  Gao, Juan;  He, Gang;  Sun, Zhaoqi;  Chen, Hanshuang;  Zheng, Changyong 收藏  |  浏览/下载：26/0  |  提交时间：2017/10/18 High-k Gate Dielectric  Atomic-layer-deposition  Electrical Properties  Carrier Transportation Mechanism  Incorporation   The chemistry and thermal stability of HfTaO/Si interface by x-ray photoelectron spectroscopy 期刊论文  OAI收割 SURFACE AND INTERFACE ANALYSIS, 2012, 卷号: 44, 期号: 4, 页码: 395-398 Yu, T; Jin, CG; Yang, XM; Wu, XM; Zhuge, LJ; Ge, SB 收藏  |  浏览/下载：22/0  |  提交时间：2013/04/17 high-k dielectric  thin film  HfTaO  x-ray photoelectron spectroscopy  interfacial chemistry  thermal property   Role of interface dipole in metal gate/high-k effective work function modulation by aluminum incorporation 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 94, 期号: 25, 页码: art. no. 252905 作者:  Zhang XW 收藏  |  浏览/下载：62/0  |  提交时间：2010/03/08 high-k dielectric thin films  MOS capacitors  work function   Phase separation enhanced interfacial reactions in complex high-k dielectric films 期刊论文  OAI收割 Integrated Ferroelectrics, 2006, 卷号: 86, 页码: 13-19 X. Y. Qiu; F. Gao; H. W. Liu; J. S. Zhu; J. M. Liu 收藏  |  浏览/下载：18/0  |  提交时间：2012/04/14 phase separation  interfacial reaction  high-k dielectric film  pulsed-laser deposition  silicate thin-films  thermal-stability  gate  property  hfo2