机构

• 合肥物质科学研究院 [11]
• 上海微系统与信息技术... [2]
• 高能物理研究所 [2]
• 化学研究所 [1]
• 大连化学物理研究所 [1]
• 半导体研究所 [1]
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采集方式

• OAI收割 [17]
• iSwitch采集 [1]

内容类型

• 期刊论文 [18]

发表日期

• 2020 [1]
• 2019 [1]
• 2018 [5]
• 2017 [4]
• 2016 [4]
• 2012 [2]
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学科主题

• Materials ... [1]
• Science & ... [1]
• 半导体材料 [1]

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浏览/检索结果: 共18条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Low temperature magnetism in the rare-earth perovskite GdScO3* 期刊论文  OAI收割 CHINESE PHYSICS B, 2020, 卷号: 29 作者:  Sheng, Jie-Ming;  Kan, Xu-Cai;  Ge, Han;  Yuan, Pei-Qian;  Zhang, Lei   |  收藏  |  浏览/下载：46/0  |  提交时间：2020/10/26 HIGH-K DIELECTRICS  NEUTRON-DIFFRACTION  FERROELECTRICITY  rare-earth perovskite  magnetization  spin-flop transition  quantum critical point   Annealing-induced evolution in interface stability and electrical performance of sputtering-driven rare-earth-based gate oxides 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 778, 期号: 无, 页码: 579-587 作者:  Wang, Die;  He, Gang;  Liang, Shuang;  Liu, Mao   |  收藏  |  浏览/下载：71/0  |  提交时间：2020/03/31 Dy2O3 gate dielectrics  High-k  Annealing temperature  Optical properties  Electrical characteristics   Organic Field-Effect Transistor for Energy-Related Applications: Low-Power-Consumption Devices, Near-Infrared Phototransistors, and Organic Thermoelectric Devices 期刊论文  OAI收割 ADVANCED ENERGY MATERIALS, 2018, 卷号: 8, 期号: 24 作者:  Ren, Xiaochen;  Yang, Fangxu;  Gao, Xiong;  Cheng, Shanshan;  Zhang, Xiaotao   |  收藏  |  浏览/下载：65/0  |  提交时间：2019/04/09 High-k Dielectrics  Nir Phototransistors  Organic Field-effect Transistors  Organic Thermoelectrics  Subthreshold Swing   Interface chemistry and surface morphology evolution study for InAs/Al2O3 stacks upon in situ ultrahigh vacuum annealing 期刊论文  OAI收割 APPLIED SURFACE SCIENCE, 2018, 卷号: 443, 页码: 567-574 作者:  Cho, Kyeongjae;  Wang, Xinglu;  Qin, Xiaoye;  Wang, Wen;  Liu, Yue   |  收藏  |  浏览/下载：35/0  |  提交时间：2019/06/20 Elemental Diffusion  Surface Morphology  High-k Dielectrics  Inas  Thermal Stability   Interface chemistry and surface morphology evolution study for inas/al2o3 stacks upon in situ ultrahigh vacuum annealing 期刊论文  iSwitch采集 Applied surface science, 2018, 卷号: 443, 页码: 567-574 作者:  Wang, Xinglu;  Qin, Xiaoye;  Wang, Wen;  Liu, Yue;  Shi, Xiaoran 收藏  |  浏览/下载：57/0  |  提交时间：2019/04/23 Elemental diffusion  Surface morphology  High-k dielectrics  Inas  Thermal stability   Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD-Derived Al2O3 Passivation Layer and Forming Gas Annealing 期刊论文  OAI收割 ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 期号: 4, 页码: 9 作者:  Jiang, Shanshan;  He, Gang;  Liu, Mao;  Zhu, Li;  Liang, Shuang   |  收藏  |  浏览/下载：70/0  |  提交时间：2019/06/10 electrical properties  forming gas annealing  high-k gate dielectrics  interface chemistry  metal-oxide-semiconductor capacitors   Interface chemistry and surface morphology evolution study for InAs/Al2O3 stacks upon in situ ultrahigh vacuum annealing 期刊论文  OAI收割 APPLIED SURFACE SCIENCE, 2018, 卷号: 443, 页码: 567-574 作者:  Zhao JL(赵佳丽);  Wang JO(王嘉鸥);  Wang, XL;  Qin, XY;  Wang, W   |  收藏  |  浏览/下载：44/0  |  提交时间：2019/09/24 Elemental diffusion  Surface morphology  High-k dielectrics  InAs  Thermal stability   Modulation of interfacial and electrical properties of HfGdO/GaAs gate stacks by ammonium sulfide passivation and rapid thermal annealing 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 704, 期号: 无, 页码: 322-328 作者:  Jiang, S. S.;  He, G.;  Liang, S.;  Zhu, L.;  Li, W. D. 收藏  |  浏览/下载：29/0  |  提交时间：2018/07/04 High-k Gate Dielectrics  Interface Chemistry  Xps Electrical Properties  Cmos Devices   Interfacial modulation and electrical properties improvement of solution-processed ZrO2 gate dielectrics upon Gd incorporation 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 699, 期号: 无, 页码: 415-420 作者:  Xiao, D. Q.;  He, G.;  Lv, J. G.;  Wang, P. H.;  Liu, M. 收藏  |  浏览/下载：16/0  |  提交时间：2018/07/04 High-k Gate Dielectrics  Gd Incorporation  Xps  Electrical Properties  Sol-gel   Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 695, 期号: 无, 页码: 2199-2206 作者:  Gao, J.;  He, G.;  Fang, Z. B.;  Lv, J. G.;  Liu, M. 收藏  |  浏览/下载：18/0  |  提交时间：2018/07/04 High-k Gate Dielectrics  Interface Quality  Band Alignment  Electrical Properties  Leakage Current Mechanism