机构

• 半导体研究所 [6]
• 长春应用化学研究所 [1]

采集方式

• OAI收割 [7]

内容类型

• 期刊论文 [6]
• 会议论文 [1]

发表日期

• 2011 [1]
• 2006 [5]
• 2005 [1]

学科主题

• 半导体物理 [5]
• 半导体材料 [1]

筛选

浏览/检索结果: 共7条，第1-7条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Alloyed (ZnSe)(x)(CuInSe(2))(1-x) and CuInSe(x)S(2-x) Nanocrystals with a Monophase Zinc Blende Structure over the Entire Composition Range 期刊论文  OAI收割 inorganic chemistry, 2011, 卷号: 50, 期号: 23, 页码: 11958-11964 Li SJ; Zhao ZC; Liu QH; Huang LJ; Wang G; Pan DC; Zhang HJ; He XQ 收藏  |  浏览/下载：34/0  |  提交时间：2012/06/07 FILM SOLAR-CELLS  OPTICAL-PROPERTIES  QUANTUM DOTS  IMPROVED PERFORMANCE  EFFICIENCY  INKS  NANOPARTICLES  LUMINESCENCE  SIZE   Characteristic of rapid thermal annealing on GaIn(N)(Sb)As/GaAs quantum well grown by molecular-beam epitaxy 期刊论文  OAI收割 journal of applied physics, 2006, 卷号: 99, 期号: 3, 页码: art.no.034903 作者:  Xu YQ 收藏  |  浏览/下载：129/0  |  提交时间：2010/04/11 IMPROVED LUMINESCENCE EFFICIENCY  OPTICAL-PROPERTIES  LASERS  NITROGEN  ORIGIN   1.3 mu m high indium content (42.5%) GaInNAs/GaAs quantum wells grown by molecular beam epitaxy 会议论文  OAI收割 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Niu, ZC; Zhang, SY; Ni, HQ; Wu, DH; He, ZH; Sun, Z; Han, Q; Wu, RG 收藏  |  浏览/下载：233/60  |  提交时间：2010/03/29 IMPROVED LUMINESCENCE EFFICIENCY  TEMPERATURE  PHOTOLUMINESCENCE  NITROGEN  ORIGIN  DIODES   The role of Sb in the molecular beam epitaxy growth of 1.30-1.55 mu m wavelength GaInNAs/GaAs quantum well with high indium content 期刊论文  OAI收割 journal of crystal growth, 2006, 卷号: 290, 期号: 2, 页码: 494-497 Wu DH; Niu ZC; Zhang SY; Ni HQ; He ZH; Sun Z; Han Q; Wu RH 收藏  |  浏览/下载：92/0  |  提交时间：2010/04/11 photoluminescence  molecular beam epitaxy  quantum wells  nitrides  semiconducting III-V materials  IMPROVED LUMINESCENCE EFFICIENCY  LASER-DIODES  TEMPERATURE  SURFACTANT  EMISSION  NITROGEN  ORIGIN   Enhancement of photoluminescence intensity of GaInNAs/GaAs quantum wells by two-step rapid thermal annealing 期刊论文  OAI收割 chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2579-2582 Zhao H (Zhao Huan); Xu YQ (Xu Ying-Qiang); Ni HQ (Ni Hai-Qiao); Han Q (Han Qin); Wu RH (Wu Rong-Han); Niu ZC (Niu Zhi-Chuan) 收藏  |  浏览/下载：60/0  |  提交时间：2010/04/11 MOLECULAR-BEAM EPITAXY  IMPROVED LUMINESCENCE EFFICIENCY  ORIGIN   Post-growth and in situ annealing on GaInNAs(Sb) and their application in 1.55 mu m lasers 期刊论文  OAI收割 semiconductor science and technology, 2006, 卷号: 21, 期号: 3, 页码: 279-282 作者:  Xu YQ;  Yang XH 收藏  |  浏览/下载：92/0  |  提交时间：2010/04/11 MOLECULAR-BEAM EPITAXY  IMPROVED LUMINESCENCE EFFICIENCY  QUANTUM-WELLS  ORIGIN   High structural and optical quality 1.3 mu m GaInNAs/GaAs quantum wells with higher indium content grown by molecular-beam expitaxy 期刊论文  OAI收割 applied physics letters, 2005, 卷号: 87, 期号: 16, 页码: art.no.161911 Zhang SY; Niu ZC; Ni HQ; Wu DH; He ZH; Sun Z; Han Q; Wu RH 收藏  |  浏览/下载：120/35  |  提交时间：2010/03/17 IMPROVED LUMINESCENCE EFFICIENCY