机构

• 半导体研究所 [10]
• 金属研究所 [1]

采集方式

• OAI收割 [8]
• iSwitch采集 [3]

内容类型

• 期刊论文 [10]
• 会议论文 [1]

发表日期

• 2009 [1]
• 2006 [3]
• 2000 [7]

学科主题

• 半导体材料 [5]
• 光电子学 [1]
• 半导体物理 [1]

筛选

浏览/检索结果: 共11条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Integratable and High Speed Complex-Coupled MQW-DFB Lasers Fabricated on Semi-Insulating Substrates 期刊论文  OAI收割 chinese physics letters, 2009, 卷号: 26, 期号: 5, 页码: art. no. 054206 作者:  Wang Y;  Pan JQ 收藏  |   Nanoelectronic devices-resonant tunnelling diodes grown on inp substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature 期刊论文  iSwitch采集 Chinese physics, 2006, 卷号: 15, 期号: 6, 页码: 1335-1338 作者:  Zhang, Y;  Zeng, YP;  Ma, L;  Wang, BQ;  Zhu, ZP 收藏  |   Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature 期刊论文  OAI收割 CHINESE PHYSICS, 2006, 卷号: 15, 期号: 6, 页码: 1335-1338 作者:  Zhang, Y;  Zeng, YP;  Ma, L;  Wang, BQ;  Zhu, ZP   |  收藏  |   Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature 期刊论文  OAI收割 chinese physics, 2006, 卷号: 15, 期号: 6, 页码: 1335-1338 作者:  Zhang Y 收藏  |   The effect of substrate orientation on the morphology of inas nanostructures on (001) and (11n)a/b(n=1-5) inp substrates 期刊论文  iSwitch采集 Journal of crystal growth, 2000, 卷号: 218, 期号: 2-4, 页码: 203-208 作者:  Sun, ZZ;  Wu, J;  Chen, YH;  Liu, FQ;  Ding, D 收藏  |   The structural and photoluminescence properties of self-organized quantum dots in inas/in0.53ga0.47as multilayer on inp substrate 期刊论文  iSwitch采集 Journal of crystal growth, 2000, 卷号: 212, 期号: 1-2, 页码: 360-363 作者:  Sun, ZZ;  Wu, J;  Lin, F;  Liu, FQ;  Chen, YH 收藏  |   The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53Ga0.47As multilayer on InP substrate 期刊论文  OAI收割 journal of crystal growth, 2000, 卷号: 212, 期号: 1-2, 页码: 360-363 作者:  Ye XL;  Xu B 收藏  |   The effect of substrate orientation on the morphology of InAs nanostructures on (001) and (11n)A/B(n=1-5) InP substrates 期刊论文  OAI收割 journal of crystal growth, 2000, 卷号: 218, 期号: 2-4, 页码: 203-208 作者:  Xu B 收藏  |   Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 期刊论文  OAI收割 physica e, 2000, 卷号: 8, 期号: 2, 页码: 164-169 作者:  Ye XL;  Xu B 收藏  |   Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates 会议论文  OAI收割 50th iumrs international conference on advanced materials, beijing, peoples r china, jun 13-18, 1999 作者:  Ye XL;  Xu B 收藏  |