中国科学院机构知识库网格系统: 检索

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	Characteristic study of maximum modal gain of p-doped 1.3 mu m inas/gaas quantum dot lasers 期刊论文 iSwitch采集 Acta physica sinica, 2009, 卷号: 58, 期号: 3, 页码: 1896-1900 作者: Ji Hai-Ming; Cao Yu-Lian; Yang Tao; Ma Wen-Quan; Cao Qing 收藏 \|
	Characteristic study of maximum modal gain of p-doped 1.3 mu m InAs/GaAs quantum dot lasers 期刊论文 OAI收割 acta physica sinica, 2009, 卷号: 58, 期号: 3, 页码: 1896-1900 作者: Ma WQ; Yang T; Cao YL 收藏 \|
	Electrical and optical properties of inas/gaas quantum dots doped by high energy mn implantation 期刊论文 iSwitch采集 Acta physica sinica, 2007, 卷号: 56, 期号: 8, 页码: 4930-4935 作者: Hu Liang-Jun; Chen Yong-Hai; Ye Xiao-Ling; Wang Zhan-Guo 收藏 \|
	Interband and intraband photocurrent of self-assembled InAs/InAlAs/InP nanostructures 期刊论文 OAI收割 nanotechnology, 2005, 卷号: 16, 期号: 12, 页码: 2785-2789 作者: Jin P; Xu B 收藏 \|
	Quantum-dot superluminescent diode: A proposal for an ultra-wide output spectrum 期刊论文 OAI收割 optical and quantum electronics, 1999, 卷号: 31, 期号: 12, 页码: 1235-1246 作者: Xu B 收藏 \|
	Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(311)B surfaces 期刊论文 OAI收割 journal of crystal growth, 1999, 卷号: 205, 期号: 4, 页码: 481-488 作者: Xu B 收藏 \|
	In composition dependence of lateral ordering in InGaAs quantum dots grown on (311)B GaAs substrates 期刊论文 OAI收割 applied surface science, 1999, 卷号: 141, 期号: 1-2, 页码: 101-106 作者: Xu B 收藏 \|
	Two-dimensional ordering of self-assembled InxGal-xAs quantum dots grown on GaAs(311)B surfaces 期刊论文 OAI收割 journal of crystal growth, 1999, 卷号: 206, 期号: 4, 页码: 279-286 作者: Xu B 收藏 \|
	Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy 期刊论文 OAI收割 journal of crystal growth, 1998, 卷号: 192, 期号: 3-4, 页码: 376-380 作者: Xu B 收藏 \|