中国科学院机构知识库网格系统: 检索

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	Quantum Confined Indium-Rich Cluster Lasers with Polarized Dual-Wavelength Output 期刊论文 OAI收割 Acs Photonics, 2019, 卷号: 6, 期号: 8, 页码: 1990-1995 作者: Q.N.Yu; M.Zheng; H.X.Tai; W.Lu; Y.Shi \| 收藏 \| 浏览/下载：40/0 \| 提交时间：2020/08/24 InGaAs/GaAs,strains,quantum confined lasers,indium-rich clusters,dual wavelengths,polarization,surface-emitting laser,semiconductor-laser,temperature-dependence,segregation,emission,growth,si,Science & Technology - Other Topics,Materials Science,Optics,Physics
	Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth 期刊论文 OAI收割 APPLIED PHYSICS LETTERS, 2013, 卷号: 103, 期号: 15 作者: Yang, H(杨辉); Li, DY(李德尧); Zhang, SM(张书明); Wang, HB(王怀兵); Liu, JP（刘建平）收藏 \| 浏览/下载：27/0 \| 提交时间：2014/01/15 C-PLANE GAN HYDROGEN TREATMENT INDIUM SEGREGATION SUBSTRATE DEFECTS
	The effects of indium segregation on exciton binding energy and oscillator strength in GaInAs/GaAs quantum wells 期刊论文 OAI收割 Superlattices and Microstructures, 2009, 卷号: 46, 期号: 4, 页码: 618-626 S. D. Wu, Z. Huang, Y. Liu, Q. F. Huang, W. Guo and Y. G. Cao 收藏 \| 浏览/下载：49/0 \| 提交时间：2012/11/06 Indium segregation Transfer matrix method Exciton binding energy Exciton oscillator strength molecular-beam-epitaxy surface segregation electric-field ingaas layers growth atoms profile matrix
	The effects of indium segregation on exciton binding energy and oscillator strength in GaInAs/GaAs quantum wells 期刊论文 OAI收割 Superlattices and Microstructures, 2009, 卷号: 46, 期号: 4, 页码: 618-626 S. D. Wu, Z. Huang, Y. Liu, Q. F. Huang, W. Guo and Y. G. Cao 收藏 \| 浏览/下载：49/0 \| 提交时间：2012/11/06 Indium segregation Transfer matrix method Exciton binding energy Exciton oscillator strength molecular-beam-epitaxy surface segregation electric-field ingaas layers growth atoms profile matrix
	The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells 期刊论文 OAI收割 Physica E-Low-Dimensional Systems & Nanostructures, 2009, 卷号: 41, 期号: 9, 页码: 1656-1660 S. D. Wu, Z. Huang, Y. Uu, Q. F. Huang, W. Guo and Y. G. Cao 收藏 \| 浏览/下载：21/0 \| 提交时间：2012/11/06 Indium segregation Optical gain Valence band structure Quantum well molecular-beam-epitaxy surface segregation lasers subbands parameters growth atoms gaas
	The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells 期刊论文 OAI收割 Physica E-Low-Dimensional Systems & Nanostructures, 2009, 卷号: 41, 期号: 9, 页码: 1656-1660 S. D. Wu, Z. Huang, Y. Uu, Q. F. Huang, W. Guo and Y. G. Cao 收藏 \| 浏览/下载：19/0 \| 提交时间：2012/11/06 Indium segregation Optical gain Valence band structure Quantum well molecular-beam-epitaxy surface segregation lasers subbands parameters growth atoms gaas
	Detection of indium segregation effects in ingaas/gaas quantum wells using reflectance-difference spectrometry 期刊论文 iSwitch采集 Materials science and engineering b-solid state materials for advanced technology, 2002, 卷号: 91, 页码: 62-65 作者: Ye, XL; Chen, YH; Xu, B; Wang, ZG 收藏 \| 浏览/下载：19/0 \| 提交时间：2019/05/12 Reflectance-difference spectroscopy Indium segregation Ingaas/gaas quantum wells
	Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry 期刊论文 OAI收割 materials science and engineering b-solid state materials for advanced technology, 2002, 卷号: 91, 期号: 0, 页码: 62-65 作者: Ye XL; Xu B 收藏 \| 浏览/下载：67/4 \| 提交时间：2010/08/12 reflectance-difference spectroscopy indium segregation InGaAs/GaAs quantum wells EPITAXY-GROWN INGAAS/GAAS SURFACE SEGREGATION INTERFACE
	Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry 会议论文 OAI收割 9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001 作者: Xu B; Ye XL 收藏 \| 浏览/下载：17/0 \| 提交时间：2010/11/15 reflectance-difference spectroscopy indium segregation InGaAs/GaAs quantum wells EPITAXY-GROWN INGAAS/GAAS SURFACE SEGREGATION INTERFACE