机构

• 半导体研究所 [6]
• 西安光学精密机械研究... [3]
• 长春光学精密机械与物... [2]

采集方式

• OAI收割 [8]
• iSwitch采集 [3]

内容类型

• 期刊论文 [8]
• 会议论文 [2]
• 学位论文 [1]

发表日期

• 2011 [1]
• 2009 [1]
• 2008 [2]
• 2007 [2]
• 2006 [1]
• 2005 [1]
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学科主题

• 半导体物理 [2]
• instrument... [1]
• 半导体材料 [1]
• 物理电子学 [1]
• 电子、电信技术::半... [1]

筛选

浏览/检索结果: 共11条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 InAs/GaSb superlattices grown by LP-MOCVD for similar to 10 mu m wavelength infrared range 期刊论文  OAI收割 infrared physics & technology, 2011, 卷号: 54, 期号: 6, 页码: 478-481 作者:  YinFei 收藏  |  浏览/下载：16/0  |  提交时间：2012/06/29 InAs/GaSb superlattices  InAsSb interface layer  Growth temperature  LP-MOCVD   面阵式激光雷达探测芯片的设计与制作 学位论文  OAI收割 硕士: 中国科学院西安光学精密机械研究所., 2009 作者:  尹飞 收藏  |  浏览/下载：57/0  |  提交时间：2011/10/09 MSM光探测器  GaAs  激光雷达  LP-MOCVD  光刻工艺   Photoluminescence properties of tensile-strained gaasp/gainp single quantum wells grown by metal organic chemical vapor deposition 期刊论文  iSwitch采集 Japanese journal of applied physics, 2008, 卷号: 47, 期号: 9, 页码: 7026-7031 作者:  Zhong, Li;  Ma, Xaoyu 收藏  |  浏览/下载：29/0  |  提交时间：2019/05/12 Tensile strain  Gaasp/gainp  Photoluminescence  Quantum well  Laser diodes  Lp-mocvd   Photoluminescence properties of tensile-strained GaAsP/GaInP single quantum wells grown by metal organic chemical vapor deposition 期刊论文  OAI收割 japanese journal of applied physics, 2008, 卷号: 47, 期号: 9, 页码: 7026-7031 part 1 Zhong, L; Ma, XY 收藏  |  浏览/下载：62/0  |  提交时间：2010/03/08 tensile strain  GaAsP/GaInP  photoluminescence  quantum well  laser diodes  LP-MOCVD   Preferential orientation growth of ain thin films on si (111) substrates by lp-mocvd 期刊论文  iSwitch采集 Modern physics letters b, 2007, 卷号: 21, 期号: 22, 页码: 1437-1445 作者:  Zhao, Yongmei;  Sun, Guosheng;  Liu, Xingfang;  Li, Jiaye;  Zhao, Wanshun 收藏  |  浏览/下载：34/0  |  提交时间：2019/05/12 Aluminum nitride  Low pressure metalorganic chemical vapor deposition (lp-mocvd)  V/iii ratio  Preferential orientation growth mechanism   Preferential orientation growth of AIN thin films on Si (111) substrates by LP-MOCVD 期刊论文  OAI收割 modern physics letters b, 2007, 卷号: 21, 期号: 22, 页码: 1437-1445 Zhao, YM; Sun, GS; Liu, XF; Li, JY; Zhao, WS; Wang, L; Luo, MC; Li, JM 收藏  |  浏览/下载：52/0  |  提交时间：2010/03/08 aluminum nitride  low pressure metalorganic chemical vapor deposition (LP-MOCVD)  V/III ratio  preferential orientation growth mechanism   Growth and characterization of GaxIn1-xAs1-ySby epitaxial layers grown by LP-MOCVD 会议论文  OAI收割 Jingwei Wang; Yiding Wang; Tao Wang; Shuren Yang; Xiaoting Li; Jingzhi Yin; Xiaofeng Sai; SaiHongkai Gao 收藏  |  浏览/下载：98/4  |  提交时间：2010/01/14 LP-MOCVD  mismatched  GaInAsSb  surface morphology   Formation and characteristics of quantum dots of wide band gap II-VI semiconductor (EI CONFERENCE) 会议论文  OAI收割 Fifth International Conference on Thin Film Physics and Applications, May 31, 2004 - June 2, 2004, Shanghai, China Fan X. W.; Shan C. X.; Yang Y.; Zhang J. Y.; Liu Y. C.; Lu Y. M.; Shen D. Z. 收藏  |  浏览/下载：28/0  |  提交时间：2013/03/25 CdSe and ZnCdSe quantum dots (QDs) were grown under Stranski-Krastanow (S-K) mode by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The formation process of CdSe QDs below critical thickness was observed by atomic force microscopy (AFM). The formation mechanism of CdSe QDs below the critical thickness was due to the effect of surface diffusion and strain release. ZnCdSe QDs were grown based on the calculated critical thickness. Two kinds of variations in the ZnCdSe QDs appeared over time  the Ostwald ripening process and dot formation process. ZnSeS dots were grown under Volmer-Weber (V-W) mode. With increasing the growth duration  the size of dots becomes larger and the density decreases  which is explained by virtue of the surface free energy.   ZnO-Si不同退火条件对生长ZnSe薄膜的影响 期刊论文  OAI收割 发光学报, 2003, 期号: 01, 页码: 61-65 作者:  申德振;  张振中 收藏  |  浏览/下载：26/0  |  提交时间：2013/03/11 硒化锌薄膜  Si衬底  ZnO缓冲层  LP-MOCVD   A novel 1.3-mu m high t-0 algainas/inp strained-compensated multi-quantum well complex-coupled distributed feedback laser diode 期刊论文  iSwitch采集 Japanese journal of applied physics part 1-regular papers short notes & review papers, 1999, 卷号: 38, 期号: 9a, 页码: 5096-5100 作者:  Chen, B;  Wang, W;  Wang, XJ;  Zhang, JY;  Fan, Z 收藏  |  浏览/下载：34/0  |  提交时间：2019/05/12 Fiber communication  Algainas/inp  Distributed feedback laser diodes  Complex-coupled grating  Strained-compensated  Lp-mocvd