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• 半导体研究所 [19]
• 上海微系统与信息技术... [3]
• 物理研究所 [2]
• 苏州纳米技术与纳米仿... [1]
• 长春光学精密机械与物... [1]
• 合肥物质科学研究院 [1]
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• OAI收割 [28]

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• 期刊论文 [24]
• 会议论文 [4]

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• 2021 [1]
• 2011 [3]
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学科主题

• 半导体物理 [10]
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筛选

浏览/检索结果: 共28条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Traceless Removal of Two Kernel Atoms in a Gold Nanocluster and Its Impact on Photoluminescence 期刊论文  OAI收割 ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2021 作者:  Zhou, Yue;  Liao, Lingwen;  Zhuang, Shengli;  Zhao, Yan;  Gan, Zibao   |  收藏  |  浏览/下载：56/0  |  提交时间：2021/04/26 Au-46(m-MBT)(26)  Au-48(m-MBT)(26)  gold nanoclusters  photoluminescence  traceless removal   NIR-luminescence from ternary lanthanide [Ho(III), Pr(III) and Tm(III)] complexes with 1-(2-naphthyl)-4,4,4-trifluoro-1,3-butanedionate 期刊论文  OAI收割 journal of luminescence, 2011, 卷号: 131, 期号: 9, 页码: 1857-1863 Dang S; Yu JB; Wang XF; Sun LN; Deng RP; Feng J; Fan WQ; Zhang HJ 收藏  |  浏览/下载：25/0  |  提交时间：2012/06/08 INTRAMOLECULAR ENERGY-TRANSFER  1.5 MU-M  LIGHT-EMITTING-DIODES  ELECTROLUMINESCENT DEVICES  MESOPOROUS SILICA  TRIPLET-STATE  EMISSION  PHOTOLUMINESCENCE  ND3+  NANOPARTICLES   The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD 期刊论文  OAI收割 journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42 作者:  Song HP;  Shi K;  Sang L;  Wei HY 收藏  |  浏览/下载：67/3  |  提交时间：2011/07/05 Metal organic chemical vapor deposition  Sapphire  Zinc compounds  Semiconducting II-VI materials  VAPOR-PHASE EPITAXY  OPTICAL-PROPERTIES  ZNO NANORODS  RAMAN-SCATTERING  M-PLANE  FILMS  PHOTOLUMINESCENCE  DEPOSITION  NANOWIRES  FIELDS   GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy 期刊论文  OAI收割 journal of physics d-applied physics, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 2011, 卷号: 44, 44, 期号: 33, 页码: 335102, 335102 作者:  He JF;  Wang HL;  Shang XJ;  Li MF;  Zhu Y   |  收藏  |  浏览/下载：35/0  |  提交时间：2012/01/06 1.3 MU-M  STRAIN RELIEF  LASERS  SUBSTRATE  PHOTOLUMINESCENCE  DISLOCATIONS  OPERATION  RANGE  1.3 Mu-m  Strain Relief  Lasers  Substrate  Photoluminescence  Dislocations  Operation  Range   Structural and optical properties of nearly stress-free m-plane ZnO film on (100) gamma-LiAlO2 with a GaN buffer layer by metal-organic chemical vapor deposition 期刊论文  OAI收割 Applied Surface Science, 2009, 卷号: 255, 期号: 22, 页码: 9146-9148 作者:  Xu K (徐科) 收藏  |  浏览/下载：283/58  |  提交时间：2011/03/14 m-Plane ZnO thin film  Semiconductor compounds  Chemical vapor deposition  Residual stress  Photoluminescence spectra   Effect of GaAs/GaSb combination strain-reducing layer on self-assembled InAs quantum dots 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 7, 页码: 2649 Jiang, ZW; Wang, WX; Gao, HC; Li, H; Yang, CL; He, T; Wu, DZ; Chen, H; Zhou, JM 收藏  |  浏览/下载：25/0  |  提交时间：2013/09/17 NARROW PHOTOLUMINESCENCE LINEWIDTH  CHEMICAL-VAPOR-DEPOSITION  MOLECULAR-BEAM EPITAXY  GROWTH INTERRUPTION  MU-M  PRESSURE  DENSITY  REGION  SB   Properties of strain compensated symmetrical triangular quantum wells composed of InGaAs/InAs chirped superlattice grown using gas source molecular beam epitaxy 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2008, 卷号: 25, 期号: 2, 页码: 726-729 Gu, Y; Zhang, YG(张永刚） 收藏  |  浏览/下载：27/0  |  提交时间：2012/03/24 2.1 MU-M  TEMPERATURE-DEPENDENCE  LASERS  PHOTOLUMINESCENCE  WAVELENGTH  HETEROSTRUCTURE   Field emission properties of ZnO nanowires (EI CONFERENCE) 会议论文  OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China Meng X. Q.; Shen D. Z.; Zhang J. Y.; Zhao D. X.; Lu Y. M.; Zhang Z. Z.; Fan X. W. 收藏  |  浏览/下载：23/0  |  提交时间：2013/03/25 ZnO nanowires were obtained by using a simple vapor solid process. The length of the nanowires is about 1 m  with diameters ranging from 40 nm to 150 nm. X-ray diffraction (XRD) pattern confirms the nanowires are wurtzite structure with c-axis preferred orientation. Photoluminescence (PL) measurement shows a strong UV emission and a weak visible emission. Field emission (FE) results proved the nanowires have low turn-on voltage and high field enhancement factor  which indicates ZnO nanowire is a suitable candidate for field emission display.   Tuning of emission wavelength of InAs/GaAs quantum dots sandwiched by combination layers 会议论文  OAI收割 2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004 Fang, ZD (Fang, Zhidan); Gong, M (Gong, Meng); Miao, ZH (Miao, Zhenhua); Niu, ZC (Niu, Zhichuan) 收藏  |  浏览/下载：119/32  |  提交时间：2010/03/29 quantum dots  photoluminescence  combination layer  1.3 MU-M  LASERS  INALAS   Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors 会议论文  OAI收割 2nd asian conference on nanoscience and nanotechnology, beijing, peoples r china, nov 24-27, 2004 Zeng, YX (Zeng, Yuxin); Liu, W (Liu, Wei); Yang, FH (Yang, Fuhua); Xu, P (Xu, Ping); Tan, PH (Tan, Pingheng); Zheng, HZ (Zheng, Houzhi); Zeng, YP (Zeng, Yiping); Xing, YJ (Xing, Yingjie); Yu, DP (Yu, Dapeng) 收藏  |  浏览/下载：113/31  |  提交时间：2010/03/29 InAs quantum dot  photoluminescence  modulation-doped  field effect transistor  MU-M  CAPPING LAYER