机构

• 半导体研究所 [6]
• 金属研究所 [2]
• 物理研究所 [1]
• 长春光学精密机械与物... [1]
• 新疆理化技术研究所 [1]
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采集方式

• OAI收割 [11]
• iSwitch采集 [2]

内容类型

• 期刊论文 [13]

发表日期

• 2018 [1]
• 2015 [1]
• 2013 [1]
• 2012 [1]
• 2011 [4]
• 2010 [1]
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学科主题

• Engineerin... [1]
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• 半导体物理 [1]
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筛选

浏览/检索结果: 共13条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device 期刊论文  OAI收割 Journal of Alloys and Compounds, 2018, 卷号: 740, 页码: 816-822 作者:  Chen, Y. R.;  Li, Z. M.;  Zhang, Z. W.;  Hu, L. Q.;  Jiang, H.   |  收藏  |  浏览/下载：16/0  |  提交时间：2019/09/17 Data storage materials  Resistive switching  Metal-insulator-semiconductor  Annealing effect  Nonvolatile memory  nonvolatile memory  behaviors  mechanism  breakdown  layer  power  ti  Chemistry  Materials Science  Metallurgy & Metallurgical Engineering   Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 8 作者:  Zhou, H (Zhou Hang);  Cui, JW (Cui Jiang-Wei);  Zheng, QW (Zheng Qi-Wen);  Guo, Q (Guo Qi);  Ren, DY (Ren Di-Yuan)   |  收藏  |  浏览/下载：32/0  |  提交时间：2018/01/26 Reliability  Silicon-on-insulator N-channel Metal-oxide-semiconductor Field-effect Transistor  Total Ionizing Dose Effect  Electrical Stress   Spectroscopic analysis of phase constitution of high quality VO2 thin film prepared by facile sol-gel method 期刊论文  OAI收割 AIP ADVANCES, 2013, 卷号: 3, 期号: 4, 页码: 42132 作者:  Wu, YF;  Fan, LL;  Chen, SM;  Chen, S;  Zou, CW 收藏  |  浏览/下载：24/0  |  提交时间：2016/04/08 aluminium compounds  annealing  metal-insulator transition  Raman spectra  semiconductor thin films  sol-gel processing  vanadium compounds  X-ray absorption spectra  X-ray diffraction   Poly-Silicon Grating Couplers for Efficient Coupling With Optical Fibers 期刊论文  OAI收割 IEEE PHOTONICS TECHNOLOGY LETTERS, 2012, 卷号: 24, 期号: 18, 页码: 1614-1617 Qiu, C; Sheng, Z; Li, L; Pang, A; Wang, ZQ; Wu, AM; Wang, X; Zou, SC; Gan, FW 收藏  |  浏览/下载：23/0  |  提交时间：2013/04/17 Complementary metal-oxide-semiconductor (CMOS) technology  silicon-on-insulator (SOI) waveguide  silicon photonics  waveguide grating coupler   High-performance 4h-sic-based metal-insulator-semiconductor ultraviolet photodetectors with sio2 and al2o3/sio2 films 期刊论文  iSwitch采集 Ieee electron device letters, 2011, 卷号: 32, 期号: 12, 页码: 1722-1724 作者:  Zhang, Feng;  Sun, Guosheng;  Huang, Huolin;  Wu, Zhengyun;  Wang, Lei 收藏  |  浏览/下载：28/0  |  提交时间：2019/05/12 Metal-insulator-semiconductor (mis) devices  Photodetectors  Ultraviolet (uv) detectors   High-performance 4H-SiC based metal-insulator-semiconductor ultraviolet photodetectors with SiO2 and Al2O3/SiO2 films 期刊论文  OAI收割 ieee electron device letters, 2011, 卷号: 32, 期号: 12, 页码: 1722 Feng Zhang; Guosheng Sun; Huolin Huang; Zhengyun Wu; Lei Wang; Wanshun Zhao; Xingfang Liu; Guoguo Yan; Liu Zheng; Lin Dong; Yiping Zeng 收藏  |  浏览/下载：26/0  |  提交时间：2012/09/04 Metal–insulator–semiconductor (MIS) devices  photodetectors  ultraviolet (UV) detectors   High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO2 and Al2O3/SiO2 Films 期刊论文  OAI收割 IEEE ELECTRON DEVICE LETTERS, 2011, 卷号: 32, 期号: 12, 页码: 1722-1724 作者:  Zhang, Feng;  Sun, Guosheng;  Huang, Huolin;  Wu, Zhengyun;  Wang, Lei   |  收藏  |  浏览/下载：24/0  |  提交时间：2021/02/02 Metal-insulator-semiconductor (MIS) devices  photodetectors  ultraviolet (UV) detectors   High-Performance4H-SiC-based metal-insulator-semiconductor ultraviolet photodetectors with SiO2 and Al2O3SiO2 Films 期刊论文  OAI收割 ieee electron device letters, 2011, 卷号: 32, 期号: 12, 页码: 1722-1724 Zhang, Feng; Sun, Guosheng; Huang, Huolin; Wu, Zhengyun; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Yan, Guoguo; Zheng, Liu; Dong, Lin; Zeng, Yiping 收藏  |  浏览/下载：25/0  |  提交时间：2012/06/14 Integrated circuits  Metal insulator boundaries  Photodetectors  Semiconducting silicon compounds  Semiconductor insulator boundaries  Silicon carbide   The Fermi Level Dependent Electronic Properties of the Smallest (2,2) Carbon Nanotube 期刊论文  OAI收割 Nano Letters, 2010, 卷号: 10, 期号: 9, 页码: 3290-3296 L. C. Yin; R. Saito; M. S. Dresselhaus 收藏  |  浏览/下载：21/0  |  提交时间：2012/04/13 (2  2) carbon nanotube  electrochemical doping  metal-semiconductor  transition  superconductivity  Fermi level  brillouin-zone integrations  materials science  superconductivity  angstrom  semiconductor  conductivity  fullerenes  energetics  insulator  diameter   Semimetal-to-semimetal charge density wave transition in 1T-TiSe2 期刊论文  OAI收割 PHYSICAL REVIEW LETTERS, 2007, 卷号: 99, 期号: 2 Li, G; Hu, WZ; Qian, D; Hsieh, D; Hasan, MZ; Morosan, E; Cava, RJ; Wang, NL 收藏  |  浏览/下载：26/0  |  提交时间：2013/09/24 METAL DICHALCOGENIDES  SUPERLATTICE FORMATION  EXCITONIC INSULATOR  BAND-STRUCTURE  TISE2  SEMICONDUCTOR  PHOTOEMISSION  REFLECTIVITY  SPECTRA