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浏览/检索结果: 共32条，第1-10条 帮助

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Metal-organic coordination polymer-derived carbon nanotubes: Preparation and application in detecting small molecules 期刊论文  OAI收割
POLYHEDRON, 2020, 卷号: 182, 页码: 8
作者:  Lin, Hong-Yan;  Liu, Qian-Qian;  Tian, Yuan;  Luan, Jian
  |  收藏  |  浏览/下载：23/0  |  提交时间：2021/02/02
Comprehensive characterization on Ga (In)-bearing dust generated from semiconductor industry for effective recovery of critical metals 期刊论文  OAI收割
WASTE MANAGEMENT, 2019, 卷号: 89, 页码: 212-223
作者:  Fang, Sheng;  Tao, Tianyi;  Cao, Hongbin;  He, Mingming;  Zeng, Xianlai
  |  收藏  |  浏览/下载：68/0  |  提交时间：2019/09/03
Temperature-dependent photoluminescence characterization of compressively strained AlGaInAs quantum wells 期刊论文  OAI收割
Materials Research Bulletin, 2019, 卷号: 115, 页码: 196-200
作者:  Y.Song;  L.G.Zhang;  Y.G.Zeng;  Y.Y.Chen;  L.Qin
  |  收藏  |  浏览/下载：30/0  |  提交时间：2020/08/24
Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence 期刊论文  OAI收割
Materials, 2018, 卷号: 11, 期号: 6, 页码: 11
作者:  Song, Y.;  Zhang, L. G.;  Zeng, Y. G.;  Qin, L.;  Zhou, Y. L.
  |  收藏  |  浏览/下载：14/0  |  提交时间：2019/09/17
Mid-gap photoluminescence and magnetic properties of GaMnN films grown by metal-organic chemical vapor deposition 期刊论文  OAI收割
CHINESE PHYSICS B, 2014, 卷号: 23, 期号: 10, 页码: 107803
作者:  Xing HY(邢海英);  Xing, HY;  崔明启;Xu, ZC;  Cui, MQ;  Xie, YX
收藏  |  浏览/下载：19/0  |  提交时间：2016/04/08
Characterization of homoepitaxial beta-Ga2O3 films prepared by metal-organic chemical vapor deposition 期刊论文  OAI收割
j. cryst. growth, 2014, 卷号: 404, 页码: 75
作者:  Du, Xuejian;  Mi, Wei;  Luan, Caina;  Li, Zhao;  Xia, Changtai
收藏  |  浏览/下载：53/0  |  提交时间：2016/11/28
Characterization of homoepitaxial beta-Ga2O3 films prepared by metal-organic chemical vapor deposition 期刊论文  OAI收割
j. cryst. growth, 2014, 卷号: 404, 页码: 75
作者:  Du, Xuejian;  Mi, Wei;  Luan, Caina;  Li, Zhao;  Xia, Changtai
收藏  |  浏览/下载：20/0  |  提交时间：2016/11/28
Effects of substrate miscut on dislocation glide in metamorphic (Al) GaInP buffers 期刊论文  OAI收割
JOURNAL OF CRYSTAL GROWTH, 2013, 卷号: 380, 期号: 0, 页码: 261-267
作者:  Li, KL
收藏  |  浏览/下载：15/0  |  提交时间：2014/01/13
Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文  OAI收割
2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China
作者:  Zhang T.
收藏  |  浏览/下载：31/0  |  提交时间：2013/03/25
InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.  
Growth of short-period InAs/GaSb superlattices for infrared sensing 期刊论文  OAI收割
journal of infrared and millimeter waves, 2011, 卷号: 30, 期号: 6, 页码: 511-+
作者:  Wang Tao;  Yang Jin;  Yin Fei;  Wang Jing-Wei;  Hu Ya-Nan
收藏  |  浏览/下载：19/0  |  提交时间：2015/09/28