机构

• 大连化学物理研究所 [9]
• 半导体研究所 [3]
• 长春光学精密机械与物... [2]

采集方式

• OAI收割 [13]
• iSwitch采集 [1]

内容类型

• 期刊论文 [14]

发表日期

• 2019 [4]
• 2011 [3]
• 2010 [2]
• 2008 [1]
• 2007 [1]
• 2006 [1]
• 更多

学科主题

• 半导体物理 [2]
• 光电子学 [1]

筛选

浏览/检索结果: 共14条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 High Resolution Crossed Molecular Beams Study of the H+HD -> H-2+D Reaction 期刊论文  OAI收割 CHINESE JOURNAL OF CHEMICAL PHYSICS, 2019, 卷号: 32, 期号: 1, 页码: 123-128 作者:  Wang, Xing-an;  Yuan, Dao-fu;  Chen, Wen-tao;  Yu, Sheng-rui;  Sang, Ji-wei   |  收藏  |  浏览/下载：323/0  |  提交时间：2019/06/20 Crossed molecular beams  Velocity map ion imaging  Threshold ionization  Forward scattering oscillations  High resolution  Differential cross sections   High resolution crossed molecular beams study of the h+hd -> h-2+d reaction 期刊论文  iSwitch采集 Chinese journal of chemical physics, 2019, 卷号: 32, 期号: 1, 页码: 123-128 作者:  Sang, Ji-wei;  Yuan, Dao-fu;  Chen, Wen-tao;  Yu, Sheng-rui;  Luo, Chang 收藏  |  浏览/下载：323/0  |  提交时间：2019/05/08 Crossed molecular beams  Velocity map ion imaging  Threshold ionization  Forward scattering oscillations  High resolution  Differential cross sections   High quality 2-m GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy 期刊论文  OAI收割 Chinese Physics B, 2019, 卷号: 28, 期号: 3 作者:  J.-M.Shang;  J.Feng;  C.-A.Yang;  S.-W.Xie;  Y.Zhang   |  收藏  |  浏览/下载：31/0  |  提交时间：2020/08/24 Gallium compounds,Antimony compounds,III-V semiconductors,Molecular beam epitaxy,Molecular beams,Optically pumped lasers,Pumping (laser),Quantum well lasers,Semiconductor quantum wells,Silicon carbide,Silicon compounds,Tellurium compounds,Wide band gap semiconductors   Photoelectric Properties of N Doped MgZnO Thin Films 期刊论文  OAI收割 Faguang Xuebao/Chinese Journal of Luminescence, 2019, 卷号: 40, 期号: 8, 页码: 956-960 作者:  P.-C.Zhao;  Z.-Z.Zhang;  B.Yao;  B.-H.Li;  X.-L.Li   |  收藏  |  浏览/下载：82/0  |  提交时间：2020/08/24 Thin films,Carrier mobility,II-VI semiconductors,Light emission,Magnesium,Molecular beam epitaxy,Molecular beams,Nitrogen,Photoelectricity,Sapphire,Semiconductor alloys,Semiconductor doping,Zinc oxide   Influence of growth temperatures on the quality of InGaAs/GaAs quantum well structure grown on Ge substrate by molecular beam epitaxy 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 4, 页码: 43004, 43004 作者:  He, Jifang;  Shang, Xiangjun;  Li, Mifeng;  Zhu, Yan;  Chang, Xiuying   |  收藏  |  浏览/下载：83/0  |  提交时间：2012/06/14 Atomic force microscopy  Buffer layers  Epitaxial growth  Gallium alloys  Gallium arsenide  Germanium  Growth temperature  High resolution transmission electron microscopy  Molecular beam epitaxy  Molecular beams  Semiconducting gallium  Semiconductor device structures  Semiconductor quantum wells  Atomic Force Microscopy  Buffer Layers  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Germanium  Growth Temperature  High Resolution Transmission Electron Microscopy  Molecular Beam Epitaxy  Molecular Beams  Semiconducting Gallium  Semiconductor Device Structures  Semiconductor Quantum Wells   2-5m InAs/GaSb superlattices infrared photodetector 期刊论文  OAI收割 hongwai yu jiguang gongcheng/infrared and laser engineering, Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, 2011, 2011, 卷号: 40, 40, 期号: 8, 页码: 1403-1406, 1403-1406 作者:  Xu, Yingqiang;  Tang, Bao;  Wang, Guowei;  Ren, Zhengwei;  Niu, Zhichuan   |  收藏  |  浏览/下载：32/0  |  提交时间：2012/06/14 Alignment  Atomic force microscopy  Atomic spectroscopy  Detectors  Epitaxial growth  Gallium alloys  Gallium arsenide  Indium arsenide  Infrared detectors  Molecular beam epitaxy  Molecular beams  Optoelectronic devices  Semiconducting gallium  Superlattices  Transmission electron microscopy  X ray diffraction  Alignment  Atomic Force Microscopy  Atomic Spectroscopy  Detectors  Epitaxial Growth  Gallium Alloys  Gallium Arsenide  Indium Arsenide  Infrared Detectors  Molecular Beam Epitaxy  Molecular Beams  Optoelectronic Devices  Semiconducting Gallium  Superlattices  Transmission Electron Microscopy  x Ray Diffraction   Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers 期刊论文  OAI收割 journal of semiconductors, Journal of Semiconductors, 2011, 2011, 卷号: 32, 32, 期号: 10, 页码: 103002, 103002 作者:  Zhang, Yu;  Wang, Guowei;  Tang, Bao;  Xu, Yingqiang;  Xu, Yun   |  收藏  |  浏览/下载：34/0  |  提交时间：2012/06/14 Buffer layers  Epitaxial growth  Gallium alloys  Indium antimonides  Molecular beam epitaxy  Molecular beams  Optical waveguides  Optimization  Semiconducting gallium arsenide  Semiconductor quantum wells  Tellurium  Tellurium compounds  Buffer Layers  Epitaxial Growth  Gallium Alloys  Indium Antimonides  Molecular Beam Epitaxy  Molecular Beams  Optical Waveguides  Optimization  Semiconducting Gallium Arsenide  Semiconductor Quantum Wells  Tellurium  Tellurium Compounds   Crossed-beam universal-detection reactive scattering of radical beams characterized by laser-induced-fluorescence: the case of C-2 and CN 期刊论文  OAI收割 molecular physics, 2010, 卷号: 108, 期号: 7-9, 页码: 1097-1113 作者:  Leonori, Francesca;  Hickson, Kevin M.;  Le Picard, Sebastien D.;  Wang, Xingan;  Petrucci, Raffaele 收藏  |  浏览/下载：24/0  |  提交时间：2015/11/12 reaction dynamics  laser induced fluorescence  crossed molecular beam technique  radical beams  C-2 and CN radicals  reactions of CN with unsaturated hydrocarbons   Crossed-beam universal-detection reactive scattering of radical beams characterized by laser-induced-fluorescence: the case of C-2 and CN 期刊论文  OAI收割 molecular physics, 2010, 卷号: 108, 期号: 7-9, 页码: 1097-1113 作者:  Leonori, Francesca;  Hickson, Kevin M.;  Le Picard, Sebastien D.;  Wang, Xingan;  Petrucci, Raffaele 收藏  |  浏览/下载：30/0  |  提交时间：2015/11/12 reaction dynamics  laser induced fluorescence  crossed molecular beam technique  radical beams  C-2 and CN radicals  reactions of CN with unsaturated hydrocarbons   Probing the resonance potential in the F atom reaction with hydrogen deuteride with spectroscopic accuracy 期刊论文  OAI收割 proceedings of the national academy of sciences of the united states of america, 2008, 卷号: 105, 期号: 35, 页码: 12662-12666 作者:  Ren, Zefeng;  Che, Li;  Qiu, Minghui;  Wang, Xingan;  Dong, Wenrui 收藏  |  浏览/下载：25/0  |  提交时间：2010/11/30 crossed molecular beams scattering  potential energy surfaces  reaction dynamics  reaction resonances