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	Improved performance of optical phased arrays assisted by transparent graphene nanoheaters and air trenches 期刊论文 OAI收割 Rsc Advances, 2018, 卷号: 8, 期号: 15, 页码: 8442-8449 作者: Wang, Y. B.; Liang, L.; Chen, Y. Y.; Jia, P.; Qin, L. \| 收藏 \| 浏览/下载：7/0 \| 提交时间：2019/09/17 silicon-on-insulator layer graphene modulator transistors switch films lidar Chemistry
	Glass wafers bonding via Diels-Alder reaction at mild temperature 期刊论文 OAI收割 sensors and actuators a-physical, 2008, 卷号: 141, 期号: 1, 页码: 213-216 Zhang MJ; Zhao HY; Gao LX 收藏 \| 浏览/下载：18/0 \| 提交时间：2010/04/14 SILICON-ON-INSULATOR MICROFLUIDIC CHIPS TECHNOLOGIES FABRICATION SYSTEM FILMS LAYER MEMS
	The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文 OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G. 收藏 \| 浏览/下载：24/0 \| 提交时间：2013/03/25 The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper controlling different flow ratio of source gas SiH4 and NH3 and a great deal of tests (ellipsometer infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators three different capacitance samples in MIS structure were done degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation this result indicated that the defect density of this type SiN x was smaller and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.
	Nanofabrication based on MEMS technology 期刊论文 OAI收割 IEEE SENSORS JOURNAL, 2006, 卷号: 6, 期号: 3, 页码: 686-690 Wang, YL; Li, XX; Li, T; Yang, H; Jiao, JW 收藏 \| 浏览/下载：10/0 \| 提交时间：2011/11/08 ON-INSULATOR SUBSTRATE IMPRINT LITHOGRAPHY ROOM-TEMPERATURE SILICON FABRICATION SI RESONATORS RESOLUTION OPERATION FILMS
	Analysis of IBAD silicon oxynitride film for anti-reflection coating application 期刊论文 OAI收割 JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 卷号: 333, 期号: 3, 页码: 296-300 Wang,YJ; Cheng,XL; Lin,ZL; Zhang,CS; Xiao,HB; Zhang,F; Zou,SC 收藏 \| 浏览/下载：12/0 \| 提交时间：2012/03/24 RAY PHOTOELECTRON-SPECTROSCOPY REFRACTIVE-INDEX ON-INSULATOR THIN-FILMS WAVE-GUIDE AUGER-SPECTROSCOPY INTEGRATED-OPTICS NITRIDE FILMS ELLIPSOMETRY LAYERS
	Effects of buried oxide layer on indium diffusion in separation by implantation of oxygen 期刊论文 OAI收割 JOURNAL OF APPLIED PHYSICS, 2004, 卷号: 96, 期号: 6, 页码: 3217-3220 Chen, P; Zhu, M; Fu, RKY; Chu, PK; An, ZH; Liu, W; Montgomery, N; Biswas, S 收藏 \| 浏览/下载：31/0 \| 提交时间：2012/03/24 TRANSIENT ENHANCED DIFFUSION ON-INSULATOR FILMS SILICON SIO2 PERFORMANCE CHANNEL PROFILE DEFECTS SIMOX
	A study of silicon oxynitride film prepared by ion beam assisted deposition 期刊论文 OAI收割 MATERIALS LETTERS, 2004, 卷号: 58, 期号: 17-18, 页码: 2261-2265 Wang,YJ; Cheng,XL; Lin,ZL; Zhang,CS; Xiao,HB; Zhang,F; Zou,SC 收藏 \| 浏览/下载：19/0 \| 提交时间：2012/03/24 RAY PHOTOELECTRON-SPECTROSCOPY WAVE-GUIDE REFRACTIVE-INDEX ON-INSULATOR THIN-FILMS AUGER-SPECTROSCOPY INTEGRATED-OPTICS NITRIDE FILMS ELLIPSOMETRY LAYERS
	Fabrication of novel double-hetero-epitaxial SOT structure Si/gamma-Al2O3/Si 期刊论文 OAI收割 journal of crystal growth, 2003, 卷号: 247, 期号: 3-4, 页码: 255-260 Tan LW; Wang QY; Wang J; Yu YH; Liu ZL; Lin LY 收藏 \| 浏览/下载：60/0 \| 提交时间：2010/08/12 heteroepitaxial growth gamma-Al2O3 silicon silicon on insulator FILMS SI DEPOSITION AL2O3