中国科学院机构知识库网格系统: 检索

Surface acoustic waves in semi-insulating Fe-doped GaN films grown by hydride vapor phase epitaxy 期刊论文 OAI收割
APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 6
作者: Zhang YM(张育民); Fan YM(樊英民); Xu GZ(徐耿钊); Xu K(徐科); Zhong HJ(钟海舰)

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ELECTROMECHANICAL COUPLING COEFFICIENT PROPAGATION PROPERTIES ON-SAPPHIRE VELOCITY NITRIDE DEVICES

Mid-infrared Raman amplification and wavelength conversion in dispersion engineered silicon-on-sapphire waveguides 期刊论文 OAI收割
journal of optics, 2014, 卷号: 16, 期号: 1, 页码: 015206
作者: Wang, Zhaolu; Liu, Hongjun; Huang, Nan; Sun, Qibing; Li, Xuefeng

收藏 | 浏览/下载：33/0 | 提交时间：2014/01/07

stimulated Stokes Raman scattering coherent anti-Stokes Raman scattering wavelength conversion Raman amplification silicon-on-sapphire

Control of N/N2 species ratio in NO plasma for p-type doping of ZnO (EI CONFERENCE) 会议论文 OAI收割
作者: Chen X.; Liu L.; Liu L.; Li B.; Li B.

收藏 | 浏览/下载：21/0 | 提交时间：2013/03/25

Nitrogen-doped ZnO thin films were grown on c-plane sapphire (Al 2O3) substrates via plasma-assisted molecular beam epitaxy using plasma activated nitric oxide (NO) as the oxygen source and dopant. X-ray diffraction measurements indicate that a small NO flux benefits the crystal quality of the thin films. Hall effect measurements indicate that the electron density of the ZnO films decreases gradually with decreasing NO flux and the conduction reverses to p-type at a certain flux. Optical emission spectra indicate that the N atom content in the NO plasma increases with decreasing NO flux and the origin of this is discussed. X-ray photoelectron spectroscopy measurements demonstrate that the number of N atom occupied O sites in the ZnO lattice increases correspondingly. 2011 American Institute of Physics.

Effect of thickness on the structural, electrical and optical properties of ZnO films deposited by MBE (EI CONFERENCE) 会议论文 OAI收割
2011 International Conference on Advanced Design and Manufacturing Engineering, ADME 2011, September 16, 2011 - September 18, 2011, Guangzhou, China
Yang X.; Su S.; Yi X.; Mei T.

收藏 | 浏览/下载：25/0 | 提交时间：2013/03/25

A set of ZnO films of different thickness have been deposited on sapphire substrates using molecular beam epitaxy (MBE) by varying the growth time and the effect of film thickness on the structural electrical and optical properties have been investigated. The X-ray diffraction (XRD) results indicate that the full width at half maximum (FWHM) of the (002) diffraction peak is decreased as the film thickness increasing and the stress along c-axis is stable. Scanning electron microscope (SEM) measurement shows that the grains become more uniform as the film grows thicker and the film surface present distinct hexagon shape as the film is grown up to a thickness of 500nm. The optical absorbance Hall mobility and photoluminescence (PL) intensity are increased in accordance with the thickness of the film. (2011) Trans Tech Publications Switzerland.

Temperature dependence of carrier transfer and exciton localization in ZnO/MgZnO heterostructure (EI CONFERENCE) 会议论文 OAI收割
作者: Zhang J.; Zhang J.; Zhang J.; Li B.; Li B.

收藏 | 浏览/下载：20/0 | 提交时间：2013/03/25

MgZnO/ZnO heterostructure was fabricated on sapphire substrate by plasma assistant molecular beam epitaxy. The micro-photoluminescence spectra of sample are reported which shows that different emission peaks would appear when the laser beam focuses different deepness in the film. A carrier tunneling process from the MgZnO capping layer to ZnO layer was observed by the measured temperature dependence of photoluminescence spectra. This induces the emission intensity of the ZnO grew monotonically from 81 to 103 K. 2006 Elsevier B.V. All rights reserved.

Raman spectra and phonon modes of MgxZn1-xO alloy films (EI CONFERENCE) 会议论文 OAI收割
12th International Conference on II-VI Compounds, September 12, 2005 - September 16, 2005, Warsaw, Poland
Wei Z. P.; Lu Y. M.; Shen D. Z.; Zhang Z. Z.; Wu C. X.; Zhang J. Y.; Yao B.; Fan X. W.

收藏 | 浏览/下载：22/0 | 提交时间：2013/03/25

Hexagonal MgxZn1-xO alloy layers with 0 &le 0.3 have been grown by plasma-assisted molecular beam epitaxy on sapphire (006) and Si (111) substrates. Their crystal structures are characterized by x-ray diffraction spectroscopy. The nonresonant and resonant Raman spectra were measured using 488 nm line from Ar+ laser and 325 nm line from He-Cd laser by backscattering geometry. Four Raman modes (E2 high LO TO multiphonon processes) were observed in the nonresonant Raman spectra of hexagonal MgxZn1-xO with different Mg contents. The optical phonon frequencies were found to display one-mode behaviour for all the samples since no separate ZnO- and MgO-like modes were observed. The long-wavelength frequencies of ZnO-like optical phonons measured in the resonant Raman spectra can be expressed as linear functions of x. These behaviours can be explained within a modified random-element-isodisplacement model (MREI). 2006 WILEY-VCH Verlag GmbH Co. KGaA.

Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE) 会议论文 OAI收割
13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004
Liang H. W.; Lu Y. M.; Shen D. Z.; Yan J. F.; Li B. H.; Zhang J. Y.; Liu Y. C.; Fan X. W.

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High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that below 500 C ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.

Characterization of ZnO/Mg0.12Zn0.88O heterostructure grown by plasma-assisted molecular beam epitaxy (EI CONFERENCE) 会议论文 OAI收割
13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004
Lu Y. M.; Wu C. X.; Wei Z. P.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Liu Y. C.; Shen D. Z.; Fan X. W.

收藏 | 浏览/下载：28/0 | 提交时间：2013/03/25

In this paper Mg0.12Zn0.88O/ZnO heterostructures were fabricated on c-plane sapphire (Al2O3) substrates by plasma-assisted molecular beam epitaxy (P-MBE). The quality of the Mg 0.12Zn0.88O alloy thin film was characterized by X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED). Optical properties of the Mg0.12Zn0.88O/ZnO heterostructure were studied by absorption and photoluminescence (PL) spectra. At room temperature (RT) Mg0.12Zn0.88O/ZnO heterostructures show two absorption edges originating from ZnO and Mg 0.12Zn0.88O layers respectively. In PL spectra two ultraviolet emission bands related to the ZnO layer and the Mg 0.12Zn0.88O layer were observed. The emission band from Mg0.12Zn0.88O layer dominates at moderately lower temperature and the luminescence of ZnO becomes gradually important with increasing temperature. This is suggested to exist as a potential barrier in the interface and to restrict the relaxation of the carriers from the Mg 0.12Zn0.88O layer to ZnO layer. As the thickness of ZnO layer decreases the emission from the Mg0.12Zn0.88O layer becomes weaker and weaker. When the ZnO thickness is up to 2 nm only the luminescence of the ZnO layer is observed at RT. The quenching of the emission corresponding to the MgZnO layer indicates the existence of a strong injection process in the samples with thinner ZnO layer. 2005 Elsevier B.V. All rights reserved.

Characterization of stress induced in SOS and Si/gamma-Al2O3/Si heteroepitaxial thin films by Raman spectroscopy 外文期刊 OAI收割
2005
作者: Wang, QY; Wang, J; Wang, JH; Liu, ZL; Lin, LY

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收藏 | 浏览/下载：11/0 | 提交时间：2010/11/26

Silicon-on-sapphire Implanted Silicon Si Fabrication Improvement Epitaxy Growth Layers

Improvement of thin silicon on sapphire (sos) film materials and device performances by solid phase epitaxy 期刊论文 iSwitch采集
Materials science and engineering b-solid state materials for advanced technology, 2000, 卷号: 72, 期号: 2-3, 页码: 189-192
作者: Wang, QY; Nie, JP; Yu, F; Liu, ZL; Yu, YH

收藏 | 浏览/下载：17/0 | 提交时间：2019/05/12

Solid phase epitaxy Silicon on sapphire (sos) Carrier mobility