机构

• 化学研究所 [4]
• 长春光学精密机械与物... [3]
• 物理研究所 [1]
• 金属研究所 [1]
• 苏州纳米技术与纳米仿... [1]

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• OAI收割 [9]
• iSwitch采集 [1]

内容类型

• 期刊论文 [7]
• 会议论文 [3]

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• 2019 [1]
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• 2011 [1]
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浏览/检索结果: 共10条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Snse2 field-effect transistor with high on/off ratio and polarity-switchable photoconductivity 期刊论文  iSwitch采集 Nanoscale research letters, 2019, 卷号: 14, 期号: 1 作者:  Xu,Hong;  Xing,Jie;  Huang,Yuan;  Ge,Chen;  Lu,Jinghao 收藏  |  浏览/下载：167/0  |  提交时间：2019/05/09 Field-effect transistor  Snse2  Photoconductivity  On/off ratio   Resistive Switching and Modulation of Pb(Zr0.4Ti0.6)O-3/Nb:SrTiO3 Heterostructures 期刊论文  OAI收割 ACS APPLIED MATERIALS & INTERFACES, 2016, 卷号: 8, 期号: 48, 页码: 32948-32955 作者:  Bai, Yu;  Wang, Zhan Jie;  Chen, Yan Na;  Cui, Jian Zhong   |  收藏  |  浏览/下载：25/0  |  提交时间：2021/02/02 ferroelectric heterostructures  resistive switching behaviors  ON/OFF ratio  ferroelectric polarization  interfacial built-in field   Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With 10(-13) A/mm Leakage Current and 10(12) ON/OFF Current Ratio 期刊论文  OAI收割 IEEE ELECTRON DEVICE LETTERS, 2014, 卷号: 35, 期号: 12, 页码: 1200-1202 作者:  Cai, Y (蔡勇) 收藏  |  浏览/下载：39/0  |  提交时间：2015/02/03 Post-gate annealing (PGA)  GaN  enhancement mode  MOSFET  ON/OFF current ratio  mesa isolation current   Study of an Organic Fluorescent Material for Nanoscale Data Storage by Scanning Tunneling Microscope 期刊论文  OAI收割 CURRENT ORGANIC CHEMISTRY, 2013, 卷号: 17, 期号: 7, 页码: 771-774 作者:  Ma, Ying;  Wang, Qing;  Shi, Fangxiao;  Wang, Xiumei;  Shang, Yanli   |  收藏  |  浏览/下载：32/0  |  提交时间：2019/04/09 Data Storage  Scanning Tunneling Microscopy  Organic Thin Film  Bistability  On/off Current Ratio  Donor-pi-acceptor Molecule   Improve on/off ratio of organic heterojunction transistors by adopting single-sandwich configuration 期刊论文  OAI收割 SOLID-STATE ELECTRONICS, 2011, 卷号: 61, 期号: 1, 页码: 65-68 作者:  Shi, Jianwu;  Wang, Hua;  Wang, Haibo;  Tian, Hongkun;  Geng, Yanhou   |  收藏  |  浏览/下载：48/0  |  提交时间：2019/04/09 Organic Heterojunction Transistors  Depletion-accumulation Mode  Mobility  On/off Ratio   Fabrication of ZnO thin film transistors based on the substrate of glass (EI CONFERENCE) 会议论文  OAI收割 2009 International Symposium on Liquid Crystal Science and Technology, August 2, 2009 - August 5, 2009, Kunming, China 作者:  Tang W.;  Gao X.;  Wang C. 收藏  |  浏览/下载：27/0  |  提交时间：2013/03/25 Abstract. In our paper  we induced the process of ZnO based thin film transistors (ZnO-TFTs) fabricated on the substrate of glass. The photolithographic plate designed for using in the ZnO-TFT devices fabrication process was shown in our paper. The ZnO-TFT devices were fabricated successfully  the Ion/off ratio is 104. (2010) Trans Tech Publications.   Write-Once Read-Many-Times Memory Based on a Single Layer of Pentacene 期刊论文  OAI收割 IEEE ELECTRON DEVICE LETTERS, 2009, 卷号: 30, 期号: 4, 页码: 343-345 作者:  Shi, Shengwei;  Peng, Junbiao;  Lin, Jian;  Ma, Dongge   |  收藏  |  浏览/下载：14/0  |  提交时间：2019/04/09 Interface Dipole  On/off Ratio  Pentacene  Reliability  Write Once Read Many Times (Worm)   Polymer field-effect transistors: Materials and devices 期刊论文  OAI收割 PROGRESS IN CHEMISTRY, 2007, 卷号: 19, 期号: 2-3, 页码: 325-336 作者:  Li Rongjin;  Li Hongxiang;  Zhou Xinran;  Hu Wenping   |  收藏  |  浏览/下载：16/0  |  提交时间：2019/04/09 Polymers  Field-effect Transistors  Field-effect Transistor Materials  Mobility  On/off Ratio   The fabrication and study of ZnO-based thin film transistors (EI CONFERENCE) 会议论文  OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China 作者:  Wang C. 收藏  |  浏览/下载：23/0  |  提交时间：2013/03/25 Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO-TF-TS) have been constructed. The ZnO layers were deposited using metal organic chemical vapor deposition (MOCVD)[1-3] at about 360C. SiO2 was used as the material of gate insulator to suppress the leakage current effectively and to enable the ZnO-TFT to operate successfully. The drain current on-to-off ratio of ZnO-TFTs fabricated on the substrate of glass is about 104. The average optical transmission of ZnO-TFTs in the visible portion is 80%. All above shows that it is possible to fabricate a transparent TFT using ZnO as an active channel layer instead of the traditional Si material.   A novel method of calculation-separating second order spectrum in grating spectrometers (EI CONFERENCE) 会议论文  OAI收割 ICO20: Optical Devices and Instruments, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Xiang Y. 收藏  |  浏览/下载：15/0  |  提交时间：2013/03/25 In grating spectrometers  according to wavelength  short-wave second-order spectrum superimposes on long-wave spectrum with the wavelength twice as long as the short-wave. Usually spectrum of long-wave range is got via preventing the superimposition of short-wave second-order spectrum by cut-off filters. This paper analyses the characteristic of the ratio of short-wave second-order spectrum in long-wave superimposing spectral range to first-order spectrum in short-wave free spectral range of diffraction gratings. The paper studies a novel method of obtaining long-wave spectrum via calculation-separating short-wave second-order spectrum from mixed spectra in long-wave superimposing spectral range by data processing with the spectrum of free spectral range and the ratio (instrumental parameter) of short-wave second-order spectrum to first-order spectrum measured beforehand. Spectrum-measurement experiments were carried out by VIS-NIR spectrometers (0.36 - 1.0m). That the spectrum data got via calculation-separation coincide with those got via cut-off filter indicates that spectrum can be obtained by processing the measured date without filters in whole operating wavelength.   首页 上一页 1 下一页 末页