中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共7条,第1-7条 帮助

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Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure 期刊论文  OAI收割
journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125
作者:  
Wang C
收藏  |  浏览/下载:90/3  |  提交时间:2011/07/05
Process-induced mechanical stress effects on deep submicron CMOS device 期刊论文  OAI收割
ACTA PHYSICA SINICA, 2008, 卷号: 57, 期号: 7, 页码: 4497-4507
Li, R; Wang, QD
收藏  |  浏览/下载:114/0  |  提交时间:2012/03/24
Using boron doped amorphous diamond films as window layer of amorphous silicon solar cells 期刊论文  OAI收割
JOURNAL OF INORGANIC MATERIALS, 2008, 卷号: 23, 期号: 5, 页码: 1064-1066
作者:  
Zhu JiaQi;  Lu Jia;  Tian Gui;  Tan ManLin;  Geng Da
  |  收藏  |  浏览/下载:16/0  |  提交时间:2021/02/02
Study on variable capacitance diode of (p)nc-Si : H/(n)c-Si heterojunction 期刊论文  OAI收割
vacuum, 2003, 卷号: 71, 期号: 4, 页码: 465-469
Wei WS; Wang TM; Zhang CX; Li GH; Li YX
收藏  |  浏览/下载:454/4  |  提交时间:2010/08/12
4 MeV electron irradiation effect on electroluminesencence from Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si structures 期刊论文  OAI收割
Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 2001, 卷号: 173, 期号: 3, 页码: 299-303
G. Z. Ran; W. C. Qin; Z. C. Ma; W. H. Zong; G. G. Qin
收藏  |  浏览/下载:15/0  |  提交时间:2012/04/14
Electroluminescence from indium tin oxide film/nanoscale Si oxide/p-Si structure 期刊论文  OAI收割
Chinese Physics Letters, 1999, 卷号: 16, 期号: 8, 页码: 605-607
Y. Q. Wang; T. P. Zhao; X. M. Cui; Z. C. Ma; W. H. Zong; G. G. Qin
收藏  |  浏览/下载:14/0  |  提交时间:2012/04/14
Synchronized swinging of electroluminescence intensity and peak wavelength with Si layer thickness in Au/SiO2/nanometer Si/SiO2/p-Si structures 期刊论文  OAI收割
Applied Physics Letters, 1999, 卷号: 74, 期号: 15, 页码: 2182-2184
G. G. Qin; Y. Q. Wang; Y. P. Qiao; B. R. Zhang; Z. C. Ma; W. H. Zong
收藏  |  浏览/下载:27/0  |  提交时间:2012/04/14
p-si  silicon  device  films