中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页
机构
成果
学者
登录
注册
登陆
×
验证码:
换一张
忘记密码?
记住我
×
校外用户登录
CAS IR Grid
机构
金属研究所 [4]
半导体研究所 [2]
上海微系统与信息技术... [1]
采集方式
OAI收割 [7]
内容类型
期刊论文 [7]
发表日期
2011 [1]
2008 [2]
2003 [1]
2001 [1]
1999 [2]
学科主题
半导体材料 [2]
Physics, M... [1]
筛选
浏览/检索结果:
共7条,第1-7条
帮助
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
题名升序
题名降序
提交时间升序
提交时间降序
作者升序
作者降序
发表日期升序
发表日期降序
Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure
期刊论文
OAI收割
journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125
作者:
Wang C
收藏
  |  
浏览/下载:90/3
  |  
提交时间:2011/07/05
Hydrogenated nanocrystalline silicon
Buffer layer
i/p interface
Solar cells
OPEN-CIRCUIT VOLTAGE
A-SI-H
P/I-INTERFACE
MICROCRYSTALLINE SILICON
VAPOR-DEPOSITION
FILMS
CAPACITANCE
EFFICIENCY
CRYSTALLINE
TEMPERATURE
Process-induced mechanical stress effects on deep submicron CMOS device
期刊论文
OAI收割
ACTA PHYSICA SINICA, 2008, 卷号: 57, 期号: 7, 页码: 4497-4507
Li, R
;
Wang, QD
收藏
  |  
浏览/下载:114/0
  |  
提交时间:2012/03/24
P(+) SILICON FILMS
DEFORMATION POTENTIALS
THERMAL-OXIDATION
INVERSION LAYERS
DOPANT DIFFUSION
THIN-FILMS
STRAIN
BORON
IMPACT
STI
Using boron doped amorphous diamond films as window layer of amorphous silicon solar cells
期刊论文
OAI收割
JOURNAL OF INORGANIC MATERIALS, 2008, 卷号: 23, 期号: 5, 页码: 1064-1066
作者:
Zhu JiaQi
;
Lu Jia
;
Tian Gui
;
Tan ManLin
;
Geng Da
  |  
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2021/02/02
P-TYPE WINDOW
CARBON
amorphous diamond (a-D) films
amorphous silicon solar cells
doping
conversion efficiency
Study on variable capacitance diode of (p)nc-Si : H/(n)c-Si heterojunction
期刊论文
OAI收割
vacuum, 2003, 卷号: 71, 期号: 4, 页码: 465-469
Wei WS
;
Wang TM
;
Zhang CX
;
Li GH
;
Li YX
收藏
  |  
浏览/下载:454/4
  |  
提交时间:2010/08/12
nc-Si : H film
(p)nc-Si : H/(n)c-Si heterojunction
variable capacitance diode
NANOCRYSTALLINE SILICON FILMS
ELECTRICAL CHARACTERIZATION
CONDUCTION MECHANISM
SPECTROSCOPY
STATES
4 MeV electron irradiation effect on electroluminesencence from Au/SiO2/p-Si and Au/Si-rich SiO2/p-Si structures
期刊论文
OAI收割
Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 2001, 卷号: 173, 期号: 3, 页码: 299-303
G. Z. Ran
;
W. C. Qin
;
Z. C. Ma
;
W. H. Zong
;
G. G. Qin
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2012/04/14
porous silicon
visible electroluminescence
quantum efficiency
si
structure
p-si
oxide
photoluminescence
films
Electroluminescence from indium tin oxide film/nanoscale Si oxide/p-Si structure
期刊论文
OAI收割
Chinese Physics Letters, 1999, 卷号: 16, 期号: 8, 页码: 605-607
Y. Q. Wang
;
T. P. Zhao
;
X. M. Cui
;
Z. C. Ma
;
W. H. Zong
;
G. G. Qin
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2012/04/14
visible electroluminescence
porous silicon
p-si
diodes
films
Synchronized swinging of electroluminescence intensity and peak wavelength with Si layer thickness in Au/SiO2/nanometer Si/SiO2/p-Si structures
期刊论文
OAI收割
Applied Physics Letters, 1999, 卷号: 74, 期号: 15, 页码: 2182-2184
G. G. Qin
;
Y. Q. Wang
;
Y. P. Qiao
;
B. R. Zhang
;
Z. C. Ma
;
W. H. Zong
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2012/04/14
p-si
silicon
device
films