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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
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上海微系统与信息技术... [8]
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OAI收割 [14]
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期刊论文 [14]
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2020 [1]
2013 [1]
2012 [1]
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Comparison of different types of interfacial oxides on hole-selective p(+)-poly-Si passivated contacts for high-efficiency c-Si solar cells
期刊论文
OAI收割
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2020, 卷号: 210
作者:
Guo, Xueqi
;
Liao, Mingdun
;
Rui, Zhe
;
Yang, Qing
;
Wang, Zhixue
  |  
收藏
  |  
浏览/下载:90/0
  |  
提交时间:2020/12/16
SILICON-OXIDE
P-TYPE
REAR CONTACTS
POLYSILICON
LAYER
RESISTANCE
TRANSPORT
JUNCTIONS
THICKNESS
QUALITY
Visible-Light-Active Elemental Photocatalysts
期刊论文
OAI收割
Chemphyschem, 2013, 卷号: 14, 期号: 5, 页码: 885-892
G. Liu
;
P. Niu
;
H. M. Cheng
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2013/12/24
element
photocatalysis
photocatalyst
solar energy
water splitting
silicon nanowire arrays
p-type silicon
hydrogen-production
quantum
dots
highly efficient
water oxidation
photoelectrochemical cells
energy-conversion
semiconductor
oxide
3D branched nanowire heterojunction photoelectrodes for high-efficiency solar water splitting and H-2 generation
期刊论文
OAI收割
nanoscale, 2012, 卷号: 4, 期号: 5, 页码: 1515-1521
Sun K
;
Jing Y
;
Li C
;
Zhang XF
;
Aguinaldo R
;
Kargar A
;
Madsen K
;
Banu K
;
Zhou YC
;
Bando Y
;
Liu ZW
;
Wang DL
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2013/08/25
P-TYPE SILICON
HYDROGEN GENERATION
OPTICAL-PROPERTIES
PHOTOVOLTAIC APPLICATIONS
INDIUM-PHOSPHIDE
PHOTO-CATHODES
NANOROD ARRAYS
CELLS
ZNO
PHOTOANODES
Structure and photoluminescence properties of the quasi-regular arrangements of porous silicon
期刊论文
OAI收割
Optoelectronics and Advanced Materials-Rapid Communications, 2011, 卷号: 5, 期号: 5-6, 页码: 495-498
T. Wang
;
X. Li
;
W. Feng
;
W. Li
;
C. Tao
;
J. Wen
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2012/04/13
Porous silicon
Electrochemical anodization
Quasi-regular arrangement
Photoluminescence
p-type silicon
macroporous silicon
si substrate
alumina
Fast pore etching on high resistivity n-type silicon via photoelectrochemistry
期刊论文
OAI收割
CHINESE PHYSICS B, 2009, 卷号: 18, 期号: 2, 页码: 664-670
Bao, XQ
;
Ge, DH
;
Zhang, S
;
Li, JP
;
Zhou, P
;
Jiao, JW
;
Wang, YL
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2011/12/17
P-TYPE SILICON
MACROPORE FORMATION
POROUS SILICON
FORMATION MECHANISMS
ARRAY FORMATION
MORPHOLOGY
PHYSICS
DENSITY
LIMITS
SI
Fast pore etching on high resistivity n-type silicon via photoelectrochemistry
期刊论文
OAI收割
CHINESE PHYSICS B, 2009, 卷号: 18, 期号: 2, 页码: 664-670
Bao, XQ
;
Ge, DH
;
Zhang, S
;
Li, JP
;
Zhou, P
;
Jiao, JW
;
Wang, YL
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2011/12/17
P-TYPE SILICON
MACROPORE FORMATION
POROUS SILICON
FORMATION MECHANISMS
ARRAY FORMATION
MORPHOLOGY
PHYSICS
DENSITY
LIMITS
SI
On the origin of dissimilar pore evolution on patterned and unpatterned (100) n-type silicon
期刊论文
OAI收割
CHINESE SCIENCE BULLETIN, 2009, 卷号: 54, 期号: 7, 页码: 1143-1151
Bao, XQ
;
Ge, DH
;
Zhang, S
;
Zhao, L
;
Jiao, JW
;
Wang, YL
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2011/12/17
P-TYPE SILICON
POROUS SILICON
MACROPORE FORMATION
FORMATION MECHANISMS
ANODIC-DISSOLUTION
STABILITY ANALYSIS
MORPHOLOGY
PHYSICS
SI
DENSITY
Observation of phase-locking and phase-transition of pores in silicon electrochemistry
期刊论文
OAI收割
PHYSICA B-CONDENSED MATTER, 2008, 卷号: 403, 期号: 18, 页码: 3279-3285
Bao, XQ
;
Duan, F
;
Ge, DH
;
Zhang, S
;
Zhao, L
;
Jiao, JW
;
Zhou, P
;
Wang, YL
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2011/12/17
N-TYPE SILICON
P-TYPE SILICON
POROUS SILICON
MACROPORE FORMATION
FORMATION MECHANISM
STABILITY ANALYSIS
MORPHOLOGY
PHYSICS
LIMITS
SI
Observation of a diverse deviation from macropore-formation theory in silicon electrochemistry
期刊论文
OAI收割
CHINESE PHYSICS B, 2008, 卷号: 17, 期号: 8, 页码: 3130-3137
Bao, XQ
;
Ge, DH
;
Jiao, JW
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2011/12/17
N-TYPE SILICON
P-TYPE SILICON
POROUS SILICON
PORE FORMATION
FORMATION MECHANISMS
ANODIC-DISSOLUTION
STABILITY ANALYSIS
ARRAY FORMATION
MORPHOLOGY
PHYSICS
Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2
期刊论文
OAI收割
applied physics letters, 2008, 卷号: 93, 期号: 10, 页码: art. no. 102112
Ma, P
;
Gai, YQ
;
Wang, JX
;
Yang, FH
;
Zeng, YP
;
Li, JM
;
Li, JB
收藏
  |  
浏览/下载:45/0
  |  
提交时间:2010/03/08
P-TYPE GAN
MOLECULAR-BEAM EPITAXY
AUGMENTED-WAVE METHOD
VAPOR-PHASE EPITAXY
ELECTRICAL-PROPERTIES
OXYGEN
ACTIVATION
SILICON