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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [5]
物理研究所 [3]
金属研究所 [1]
宁波材料技术与工程研... [1]
上海技术物理研究所 [1]
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OAI收割 [10]
iSwitch采集 [1]
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期刊论文 [10]
会议论文 [1]
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2019 [1]
2010 [1]
2008 [1]
2007 [2]
2006 [2]
2001 [3]
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学科主题
半导体材料 [3]
半导体物理 [1]
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Optoelectronic neuromorphic thin-film transistors capable of selective attention and with ultra-low power dissipation
期刊论文
OAI收割
NANO ENERGY, 2019, 卷号: 62, 页码: 772-780
作者:
Yu, J. J.
;
Liang, L. Y.
;
Hu, L. X.
;
Duan, H. X.
;
Wu, W. H.
  |  
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2019/12/18
PERSISTENT PHOTOCONDUCTIVITY
SYNAPTIC DEVICES
MEMORY
PLASTICITY
Band-tail shape and transport near the metal-insulator transition in Si-doped
期刊论文
OAI收割
physical review b, PHYSICAL REVIEW B, 2010, 2010, 卷号: 82, 82, 期号: 12, 页码: art. no. 125202, Art. No. 125202
作者:
Misuraca J (Misuraca Jennifer)
;
Trbovic J (Trbovic Jelena)
;
Lu J (Lu Jun)
;
Zhao JH (Zhao Jianhua)
;
Ohno Y (Ohno Yuzo)
  |  
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2010/10/11
PERSISTENT PHOTOCONDUCTIVITY
Persistent Photoconductivity
Dx Centers
Alxga1-xas
Gaas
Semiconductors
DX CENTERS
ALXGA1-XAS
GAAS
SEMICONDUCTORS
Impedance effect of manganite thin film-based photodetectors
期刊论文
OAI收割
Chinese Science Bulletin, 2008, 卷号: 53, 期号: 2, 页码: 313-316
K. Zhao
;
M. He
;
H. B. Lu
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2012/04/13
manganite
photodetector
thin film
impedance effect
induced persistent photoconductivity
colossal magnetoresistance
Negative Persistent Photoconductivity Effect on Weak Anti‐Localization in Hetero‐Interface of InSb/GaAs(100)
会议论文
OAI收割
28th International Conference on the Physics of Semiconductors (ICPS-28)
-
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2016/05/16
inSb/GaAs hetero-interface
weak anti-localization
spin-orbit interaction
persistent photoconductivity
ZnO ultraviolet photodiodes with Pd contact electrodes
期刊论文
OAI收割
ACTA MATERIALIA, 2007, 卷号: 55, 期号: 1, 页码: 329
Young, SJ
;
Ji, W
;
Fang, TH
;
Chang, SJ
;
Su, YK
;
Du, XL
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2013/09/23
MOLECULAR-BEAM EPITAXY
CHEMICAL-VAPOR-DEPOSITION
PERSISTENT PHOTOCONDUCTIVITY
SCHOTTKY CONTACTS
GROWTH
GAN
FILMS
PHOTODETECTORS
BEHAVIOR
ZNSE
Study of persistent photoconductivity and subband electronic properties of the two-dimensional electron gas in modulation doped gaas/algaas structure
期刊论文
iSwitch采集
Acta physica sinica, 2006, 卷号: 55, 期号: 3, 页码: 1379-1383
作者:
Shu, Q
;
Shu, YC
;
Zhang, GJ
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2019/05/12
Two-dimensional electron gas
Quantum hall effect
Sdh oscillations
Persistent photoconductivity
Study of persistent photoconductivity and subband electronic properties of the two-dimensional electron gas in modulation doped GaAs/AlGaAs structure
期刊论文
OAI收割
acta physica sinica, 2006, 卷号: 55, 期号: 3, 页码: 1379-1383
Shu Q
;
Shu YC
;
Zhang GJ
;
Liu RB
;
Yao JH
;
Pi B
;
Xing XD
;
Lin YW
;
Xu JJ
;
Wang ZG
收藏
  |  
浏览/下载:69/0
  |  
提交时间:2010/04/11
two-dimensional electron gas
quantum Hall effect
SdH oscillations
persistent photoconductivity
HETEROSTRUCTURES
ALXGA1-XAS
SCATTERING
LIFETIME
MOBILITY
GAAS
TE
Hydrogenated amorphous silicon films with significantly improved stability
期刊论文
OAI收割
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 卷号: 68, 期号: 1, 页码: 123
Sheng, SR
;
Liao, XB
;
Ma, ZX
;
Yue, GZ
;
Wang, YQ
;
Kong, GL
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2013/09/17
A-SI-H
CONSTANT PHOTOCURRENT METHOD
PERSISTENT PHOTOCONDUCTIVITY
URBACH EDGE
SOLAR-CELLS
GAP STATES
ABSORPTION
DENSITY
SPECTROSCOPY
INCREASE
Hydrogenated amorphous silicon films with significantly improved stability
期刊论文
OAI收割
solar energy materials and solar cells, 2001, 卷号: 68, 期号: 1, 页码: 123-133
Sheng SR
;
Liao XB
;
Ma ZX
;
Yue GZ
;
Wang YQ
;
Kong GL
收藏
  |  
浏览/下载:63/0
  |  
提交时间:2010/08/12
amorphous silicon
stability
A-SI-H
CONSTANT PHOTOCURRENT METHOD
PERSISTENT PHOTOCONDUCTIVITY
URBACH EDGE
SOLAR-CELLS
GAP STATES
ABSORPTION
DENSITY
SPECTROSCOPY
INCREASE
Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate
期刊论文
OAI收割
journal of crystal growth, 2001, 卷号: 222, 期号: 1-2, 页码: 96-103
Xu HZ
;
Bell A
;
Wang ZG
;
Okada Y
;
Kawabe M
;
Harrison I
;
Foxon CT
收藏
  |  
浏览/下载:61/0
  |  
提交时间:2010/08/12
gallium nitride
metalorganic vapor-phase epitaxy
photoluminescence
yellow luminescence
N-TYPE GAN
PERSISTENT PHOTOCONDUCTIVITY
THIN-FILMS
DOPED GAN
DEEP LEVELS
ORIGIN
PHOTOLUMINESCENCE
DEPENDENCE
VACANCIES
EPITAXY