机构

• 半导体研究所 [5]
• 长春光学精密机械与物... [2]

采集方式

• OAI收割 [7]

内容类型

• 期刊论文 [5]
• 会议论文 [2]

发表日期

• 2007 [1]
• 2006 [2]
• 2005 [1]
• 2001 [1]
• 1997 [1]
• 1996 [1]
• 更多

学科主题

• 半导体物理 [3]
• 光电子学 [2]

筛选

浏览/检索结果: 共7条，第1-7条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN? 期刊论文  OAI收割 journal of applied physics, 2007, 卷号: 102, 期号: 11, 页码: art. no. 113521 Zhao, DG; Jiang, DS; Zhu, JJ; Liu, ZS; Zhang, SM; Liang, JW; Yang, H 收藏  |  浏览/下载：62/5  |  提交时间：2010/03/08 CHEMICAL-VAPOR-DEPOSITION  MOLECULAR-BEAM EPITAXY  X-RAY-DIFFRACTION  MG-DOPED GAN  UNDOPED GAN  PHOTOLUMINESCENCE BANDS  THREADING DISLOCATIONS  POSITRON-ANNIHILATION  GROWTH STOICHIOMETRY  GALLIUM NITRIDE   Energy transfer and red phosphorescence in strontium aluminates doped with Cr3+, Eu2+ and Dy3+ (EI CONFERENCE) 会议论文  OAI收割 Dielectrics in Emerging Technologies -and- Persistent Phosphors - International Symposia, May 15, 2005 - May 20, 2005, Quebec City, QC, Canada 作者:  Wang X.;  Wang X.;  Wang X.;  Zhang X.;  Zhang X. 收藏  |  浏览/下载：30/0  |  提交时间：2013/03/25 Cr3+ activated red (694 nm) long persistent phosphorescence originating from 2E-4A2 transition is observed in 4SrO·7Al2O3: Cr3+  Eu2+  Dy3+ system. It is demonstrated that the red phosphorescence is resulted from the conversion of Eu2+ activated blue phosphorescence through persistence energy transfer from Eu2+ to Cr3+. The excitation spectra of the 694 nm emission exhibit strong f-d band of Eu 2+  indicating the existence of the energy transfer. The dependence of lifetimes and intensities of the red and blue emissions on Cr3+ concentrations are studied. The intensity ratio of the red to blue emission bands obtained from photoluminescence spectra is in good agreement with that obtained from fluorescence lifetime measurements. The decay curves of the red phosphorescence at 694nm are also studied.   Role of edge dislocations in enhancing the yellow luminescence of n-type GaN 期刊论文  OAI收割 applied physics letters, 2006, 卷号: 88, 期号: 24, 页码: art.no.241917 作者:  Jiang DS;  Zhu JJ;  Li XY;  Zhang SM;  Zhao DG 收藏  |  浏览/下载：60/0  |  提交时间：2010/04/11 CHEMICAL-VAPOR-DEPOSITION  MOLECULAR-BEAM EPITAXY  X-RAY-DIFFRACTION  MG-DOPED GAN  UNDOPED GAN  PHOTOLUMINESCENCE BANDS  THREADING DISLOCATIONS  POSITRON-ANNIHILATION  GROWTH STOICHIOMETRY  GALLIUM NITRIDE   Characterization of ZnO/Mg0.12Zn0.88O heterostructure grown by plasma-assisted molecular beam epitaxy (EI CONFERENCE) 会议论文  OAI收割 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Lu Y. M.; Wu C. X.; Wei Z. P.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Liu Y. C.; Shen D. Z.; Fan X. W. 收藏  |  浏览/下载：28/0  |  提交时间：2013/03/25 In this paper  Mg0.12Zn0.88O/ZnO heterostructures were fabricated on c-plane sapphire (Al2O3) substrates by plasma-assisted molecular beam epitaxy (P-MBE). The quality of the Mg 0.12Zn0.88O alloy thin film was characterized by X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED). Optical properties of the Mg0.12Zn0.88O/ZnO heterostructure were studied by absorption and photoluminescence (PL) spectra. At room temperature (RT)  Mg0.12Zn0.88O/ZnO heterostructures show two absorption edges originating from ZnO and Mg 0.12Zn0.88O layers  respectively. In PL spectra  two ultraviolet emission bands related to the ZnO layer and the Mg 0.12Zn0.88O layer were observed. The emission band from Mg0.12Zn0.88O layer dominates at moderately lower temperature  and the luminescence of ZnO becomes gradually important with increasing temperature. This is suggested to exist as a potential barrier in the interface and to restrict the relaxation of the carriers from the Mg 0.12Zn0.88O layer to ZnO layer. As the thickness of ZnO layer decreases  the emission from the Mg0.12Zn0.88O layer becomes weaker and weaker. When the ZnO thickness is up to 2 nm  only the luminescence of the ZnO layer is observed at RT. The quenching of the emission corresponding to the MgZnO layer indicates the existence of a strong injection process in the samples with thinner ZnO layer. 2005 Elsevier B.V. All rights reserved.   Photoluminescence of rapid-thermal annealed Mg-doped GaN films 期刊论文  OAI收割 solid-state electronics, 2001, 卷号: 45, 期号: 7, 页码: 1153-1157 Wang LS; Fong WK; Surya C; Cheah KW; Zheng WH; Wang ZG 收藏  |  浏览/下载：83/5  |  提交时间：2010/08/12 p-type GaN  metalorganic chemical vapor deposition  photoluminescence  X-ray diffraction  rapid-thermal annealing  P-TYPE GAN  RECOMBINATION  EMISSION  ENERGY  BANDS   Effective-mass theory for InAs/GaAs strained superlattices 期刊论文  OAI收割 acta physica sinica-overseas edition, 1997, 卷号: 6, 期号: 11, 页码: 848-860 Li SS; Xia JB 收藏  |  浏览/下载：40/0  |  提交时间：2010/11/17 INAS MONOMOLECULAR PLANE  MONOLAYER QUANTUM-WELLS  MOLECULAR-BEAM EPITAXY  ELECTRONIC-STRUCTURE  OPTICAL-TRANSITIONS  VALENCE BANDS  GAAS  PHOTOLUMINESCENCE  HETEROSTRUCTURES  MICROSTRUCTURES   Effective-mass theory for InAs/GaAs strained coupled quantum dots 期刊论文  OAI收割 physical review b, 1996, 卷号: 54, 期号: 16, 页码: 11575-11581 Li SS; Xia JB; Yuan ZL; Xu ZY; Ge WK; Wang XR; Wang Y; Wang J; Chang LL 收藏  |  浏览/下载：43/0  |  提交时间：2010/11/17 SELF-ORGANIZED GROWTH  ISLAND FORMATION  VALENCE BANDS  BEAM EPITAXY  GAAS MATRIX  INAS  PHOTOLUMINESCENCE  HETEROSTRUCTURES  MICROSTRUCTURES  SUPERLATTICES