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• 半导体物理 [15]
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筛选

浏览/检索结果: 共43条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Hybrid Organic-Inorganic Thermoelectric Materials and Devices 期刊论文  OAI收割 ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2019, 卷号: 58, 期号: 43, 页码: 15206-15226 作者:  Jin, Huile;  Li, Jun;  Iocozzia, James;  Zeng, Xin;  Wei, Pai-Chun   |  收藏  |  浏览/下载：45/0  |  提交时间：2019/12/18 QUANTUM-WELL STRUCTURES  HIGH-PERFORMANCE  THERMAL-CONDUCTIVITY  GAS SENSOR  TRANSPORT-PROPERTIES  COMPOSITE FILMS  THIN-FILM  POLYMER  FIGURE  BI2TE3   Pyramidal dislocation induced strain relaxation in hexagonal structured InGaN/AlGaN/GaN multilayer 期刊论文  OAI收割 Journal of Applied Physics, 2012, 卷号: 112, 期号: 8 P. F. Yan; K. Du; M. L. Sui 收藏  |  浏览/下载：97/0  |  提交时间：2013/02/05 quantum-well structures  light-emitting-diodes  deformation mechanisms  metallic multilayers  thin-films  misfit dislocations  ingan epilayers  composites  interfaces  gan   Effects of GaN Capping on the Structural and the Optical Properties of InN Nanostructures Grown by Using MOCVD 期刊论文  OAI收割 journal of the korean physical society, 2010, 卷号: 57, 期号: 1, 页码: 128-132 Sun YP (Sun Yuanping); Sun Y (Sun Yuanping); Cho YH (Cho Yong-Hoon); Wang H (Wang Hui); Wang LL (Wang Lili); Zhang SM (Zhang Shuming); Yang H (Yang Hui) 收藏  |  浏览/下载：521/2  |  提交时间：2010/08/17 InN  Burstein-Moss effect  Quantum confinement effect  Activation energy  FUNDAMENTAL-BAND GAP  WELL STRUCTURES  EMISSION  SINGLE   The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots 期刊论文  OAI收割 journal of optics, JOURNAL OF OPTICS, 2010, 2010, 卷号: 12, 12, 期号: 5, 页码: art. no. 055203, Art. No. 055203 作者:  Huang X (Huang X.);  Zhang XH (Zhang X. H.);  Zhu YG (Zhu Y. G.);  Li T (Li T.);  Han LF (Han L. F.)   |  收藏  |  浏览/下载：91/6  |  提交时间：2010/08/17 InAs quantum dots  Inas Quantum Dots  Nonlinear Refraction  Reflection Z-scan  Dc Electric Field Effect  Electrooptic Properties  Saturable Absorber  Optical-properties  Well Structures  Single-beam  Band-gap  Electroabsorption  Absorption  Reflection  Dependence  nonlinear refraction  reflection Z-scan  dc electric field effect  ELECTROOPTIC PROPERTIES  SATURABLE ABSORBER  OPTICAL-PROPERTIES  WELL STRUCTURES  SINGLE-BEAM  BAND-GAP  ELECTROABSORPTION  ABSORPTION  REFLECTION  DEPENDENCE   The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy 期刊论文  OAI收割 optics communications, OPTICS COMMUNICATIONS, 2010, 2010, 卷号: 283, 283, 期号: 7, 页码: 1510-1513, 1510-1513 作者:  Huang X;  Zhang XH;  Zhu YG;  Li T;  Han LF   |  收藏  |  浏览/下载：156/2  |  提交时间：2010/04/22 InAs quantum dots  Inas Quantum Dots  Nonlinear Refraction  Reflection Z-scan  Reflection Z-scan  Optical Nonlinearities  2-photon Absorption  Saturable Absorber  Well Structures  Single-beam  Electroabsorption  Dispersion  Solids  Gaas  Nonlinear refraction  Reflection Z-scan  REFLECTION Z-SCAN  OPTICAL NONLINEARITIES  2-PHOTON ABSORPTION  SATURABLE ABSORBER  WELL STRUCTURES  SINGLE-BEAM  ELECTROABSORPTION  DISPERSION  SOLIDS  GAAS   Temperature characteristics of several familiar diode lasers with broad area (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者:  Wang L.;  Qin L.;  Wang L.;  Wang L. 收藏  |  浏览/下载：25/0  |  提交时间：2013/03/25 Temperature characteristics of several familiar high power diode lasers with broad area  whose wavelength was separately 808 nm  810 nm  940 nm and 980 nm  were analyzed. In order to see the effect the change of the quantum well structure on the characteristic temperatures  different structures were attempted. For the 808 nm structure  we tried different barrier thicknesses. For the 810 nm structure  different cavity lengths were attempted. And we studied the 940 nm and 980 nm also. In this paper  the widths of these devices were all 100 m. Characteristic temperatures of these devices were calculated. The appropriate structure was available for different application. 2008 SPIE.   High-power electroabsorption modulator for radio over fibre system 期刊论文  OAI收割 journal of physics d-applied physics, 2007, 卷号: 40, 期号: 14, 页码: 4120-4122 作者:  Pan JQ 收藏  |  浏览/下载：43/0  |  提交时间：2010/03/29 QUANTUM WELL STRUCTURES   Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates 期刊论文  OAI收割 journal of applied physics, 2006, 卷号: 100, 期号: 3, 页码: art.no.033705 Cui LJ (Cui L. J.); Zeng YP (Zeng Y. P.); Wang BQ (Wang B. Q.); Zhu ZP (Zhu Z. P.); Guo SL (Guo S. L.); Chu JH (Chu J. H.) 收藏  |  浏览/下载：39/0  |  提交时间：2010/04/11 QUANTUM-WELL STRUCTURES  PHOTOLUMINESCENCE SPECTRA  HEMTS   Electro-optic coefficients of Si0.75Ge0.25/Si/Si0.5Ge0.5 asymmetric superlattice measured by polarization-maintaining fiber-optic Mach-Zehnder interferometer 期刊论文  OAI收割 applied physics letters, 2006, 卷号: 89, 期号: 14, 页码: art.no.141104 Zhao L (Zhao L.); Tu XG (Tu X. G.); Zuo YH (Zuo Y. H.); Chen SW (Chen S. W.); Wang QM (Wang Q. M.) 收藏  |  浏览/下载：29/0  |  提交时间：2010/04/11 QUANTUM-WELL STRUCTURES  INPLANE OPTICAL ANISOTROPY  LAYER SUPERLATTICES  WAVE-GUIDES  SIGE  HETEROSTRUCTURES  INTERFACES  MODULATOR  SWITCH  MBE   Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE 期刊论文  OAI收割 semiconductor science and technology, 2006, 卷号: 21, 期号: 7, 页码: 841-845 Feng W (Feng W.); Pan JQ (Pan J. Q.); Zhou F (Zhou F.); Yang H (Yang H.); Zhao LJ (Zhao L. J.); Zhu HL (Zhu H. L.); Wang W (Wang W.) 收藏  |  浏览/下载：24/0  |  提交时间：2010/04/11 VAPOR-PHASE EPITAXY  BURIED-HETEROSTRUCTURE LASERS  QUANTUM-WELL STRUCTURES  BANDGAP ENERGY CONTROL  LAYERS  INGAASP