机构

• 长春光学精密机械与物... [9]
• 半导体研究所 [5]
• 福建物质结构研究所 [3]
• 物理研究所 [1]
• 中国科学院大学 [1]
• 长春应用化学研究所 [1]
• 更多

采集方式

• OAI收割 [17]
• iSwitch采集 [3]

内容类型

• 期刊论文 [11]
• 会议论文 [9]

发表日期

• 2018 [1]
• 2016 [1]
• 2013 [1]
• 2011 [2]
• 2010 [1]
• 2009 [2]
• 更多

学科主题

• 光电子学 [2]
• 半导体材料 [1]

筛选

浏览/检索结果: 共20条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 InGaAs-Based Well-Island Composite Quantum-Confined Structure with Superwide and Uniform Gain Distribution for Great Enhancement of Semiconductor Laser Performance 期刊论文  OAI收割 ACS PHOTONICS, 2018, 卷号: 5, 期号: 12, 页码: 4896-4902 作者:  Wu, Jian;  Ning, Yongqiang;  Zhang, Xing;  Zheng, Ming;  Lu, Wei   |  收藏  |  浏览/下载：56/0  |  提交时间：2019/05/22 tunable semiconductor lasers  well-island composite quantum-confined structure  In GaAs/GaAs material  gain characteristics  flat top  indium-rich islands   Highly efficient nondoped organic light emitting diodes based on thermally activated delayed fluorescence emitter with quantum-well structure 期刊论文  iSwitch采集 Acs applied materials & interfaces, 2016, 卷号: 8, 期号: 32, 页码: 20955-20961 作者:  Meng, Lingqiang;  Wang, Hui;  Wei, Xiaofang;  Liu, Jianjun;  Chen, Yongzhen 收藏  |  浏览/下载：97/0  |  提交时间：2019/05/09 Nondoped  Quantum-well structure  Txo-phcz  Thermally activated delayed fluorescence  Organic light emitting diodes   Structural amelioration of 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) (EI CONFERENCE) 会议论文  OAI收割 2nd International Conference on Energy, Environment and Sustainable Development, EESD 2012, October 12, 2012 - October 14, 2012, Jilin, China 作者:  Liu Y.;  Liu Y.;  Wang L.;  Wang L.;  Wang L. 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) has an important application in laser display. We constructed and optimized a 920 nm OPS-VECSEL with active region of In0.09Ga0.91As quantum well (QW) system pumped by 808 nm laser diode module. By the finite element method  self-consistent solutions of the semiconductor electronic and optical equations are realized to calculate the characteristics parameters of OPS-VECSEL. The performances of device especially the mode  the threshold and the optical-optical translation efficiency were analyzed by dealing with different number of QWs (1  2 and 3) in one period  QW depth  barrier width  the component and dimension of the non-absorption layer. We chose an improved structure of them. On this basis  we ameliorated the number of QW periods and the simulation showed that in order to obtain high performance device  the choice of the number of QW periods must be cautious. (2013) Trans Tech Publications  Switzerland.   Numerical study of strained ingaas quantum well lasers emitting at 2.33 mu m using the eight-band model 期刊论文  iSwitch采集 Chinese physics b, 2011, 卷号: 20, 期号: 7, 页码: 7 作者:  Wang Ming;  Gu Yong-Xian;  Ji Hai-Ming;  Yang Tao;  Wang Zhan-Guo 收藏  |  浏览/下载：58/0  |  提交时间：2019/05/12 Band structure  Eight-band k.p theory  Strained quantum well  Peak emission wavelength   Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN 期刊论文  OAI收割 applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: article no.102104 作者:  Deng QW 收藏  |  浏览/下载：57/5  |  提交时间：2011/07/05 QUANTUM-WELL-STRUCTURE  ALGAN/GAN HETEROSTRUCTURE  YELLOW LUMINESCENCE  DEEP LEVELS  TRAP  PERFORMANCE  FREQUENCY  EPILAYERS  ORIGIN  DIODES   Layered organic-inorganic hybrid perovskites: structure, optical properties, film preparation, patterning and templating engineering 期刊论文  OAI收割 crystengcomm, 2010, 卷号: 12, 期号: 10, 页码: 2646-2662 Cheng ZY; Lin J 收藏  |  浏览/下载：33/0  |  提交时间：2012/04/25 SOLID-STATE POLYMERIZATION  CRYSTAL-STRUCTURE  MAGNETIC-PROPERTIES  QUANTUM-WELL  THIN-FILMS  SUPERLATTICE STRUCTURE  THERMAL-PROPERTIES  PHASE-TRANSITIONS  SOFT LITHOGRAPHY  ENERGY-TRANSFER   The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells 期刊论文  OAI收割 Physica E-Low-Dimensional Systems & Nanostructures, 2009, 卷号: 41, 期号: 9, 页码: 1656-1660 S. D. Wu, Z. Huang, Y. Uu, Q. F. Huang, W. Guo and Y. G. Cao 收藏  |  浏览/下载：21/0  |  提交时间：2012/11/06 Indium segregation  Optical gain  Valence band structure  Quantum well  molecular-beam-epitaxy  surface segregation  lasers  subbands  parameters  growth  atoms  gaas   The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells 期刊论文  OAI收割 Physica E-Low-Dimensional Systems & Nanostructures, 2009, 卷号: 41, 期号: 9, 页码: 1656-1660 S. D. Wu, Z. Huang, Y. Uu, Q. F. Huang, W. Guo and Y. G. Cao 收藏  |  浏览/下载：19/0  |  提交时间：2012/11/06 Indium segregation  Optical gain  Valence band structure  Quantum well  molecular-beam-epitaxy  surface segregation  lasers  subbands  parameters  growth  atoms  gaas   Syntheses, crystal and band structures, and magnetic and optical properties of new CsLnCdTe(3) (Ln = La, Pr, Nd, Sm, Gd-Tm, and Lu) 期刊论文  OAI收割 Inorganic Chemistry, 2008, 卷号: 47, 期号: 3, 页码: 855-862 Y. Liu; L. Chen and L. M. Wu 收藏  |  浏览/下载：20/0  |  提交时间：2013/01/22 cdte quantum-well  ii-vi semiconductors  plane-wave method  film  solar-cells  thin-films  photovoltaic devices  electronic-structure  single-crystals  bi/cdte superlattices  thermoelectric-power   High power 1064nm laser diode array and measuring chip temperature based on emitting spectra (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者:  Wang X.;  Wang L.;  Wang L.;  Wang L.;  Wang Y. 收藏  |  浏览/下载：21/0  |  提交时间：2013/03/25 High power laser diode array with an emission wavelength of 1064nm is presented. The epitaxial structure is an InGaAs/GaAsP strained-compensated single-quantum well structure. The modules CW output power can reach to 56.5W at current of 80A. Because the heat capacity of st rather shorter pulse duration and lower duty cycle  the average driving power in the laser chip is quite low  so the heating effect cemiconductor laser is very small  using pulse injection can reduce temperature rising significantly. Aould be neglected. The definite relation between lasing wavelength and chip temperature is developed. The temperature drift coefficient is 0. 45nm/K 2008 SPIE.