机构

• 宁波材料技术与工程研... [5]
• 计算技术研究所 [4]
• 物理研究所 [1]
• 金属研究所 [1]
• 苏州纳米技术与纳米仿... [1]
• 微电子研究所 [1]
• 更多

采集方式

• OAI收割 [14]

内容类型

• 期刊论文 [12]
• 会议论文 [1]
• 外文期刊 [1]

发表日期

• 2023 [1]
• 2022 [2]
• 2021 [3]
• 2020 [2]
• 2019 [2]
• 2016 [1]
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学科主题

• Chemistry [1]

筛选

浏览/检索结果: 共14条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 A Coordinated Model Pruning and Mapping Framework for RRAM-Based DNN Accelerators 期刊论文  OAI收割 IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2023, 卷号: 42, 期号: 7, 页码: 2364-2376 作者:  Qu, Songyun;  Li, Bing;  Zhao, Shixin;  Zhang, Lei;  Wang, Ying   |  收藏  |  浏览/下载：18/0  |  提交时间：2023/12/04 AutoML  bit-pruning  deep neural networks (DNNs)  resistive random access memory (RRAM)   Saving Energy of RRAM-Based Neural Accelerator Through State-Aware Computing 期刊论文  OAI收割 IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2022, 卷号: 41, 期号: 7, 页码: 2115-2127 作者:  He, Yintao;  Wang, Ying;  Li, Huawei;  Li, Xiaowei   |  收藏  |  浏览/下载：38/0  |  提交时间：2022/12/07 Computer architecture  Microprocessors  Resistance  Power demand  Training  Biological neural networks  Optimization  Low power (LP)  neural networks  processing-in-memory  resistive random-access memory (RRAM)   An Automated Quantization Framework for High-Utilization RRAM-Based PIM 期刊论文  OAI收割 IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2022, 卷号: 41, 期号: 3, 页码: 583-596 作者:  Li, Bing;  Qu, Songyun;  Wang, Ying   |  收藏  |  浏览/下载：44/0  |  提交时间：2022/12/07 Quantization (signal)  Neural networks  Computational modeling  Data models  Hardware  Resource management  Arrays  AutoML  neural network  processing-in-memory (PIM)  quantization  resistive memory (RRAM)   Realization of a non-markov chain in a single 2D mineral RRAM 期刊论文  OAI收割 SCIENCE BULLETIN, 2021, 卷号: 66, 期号: 16, 页码: 1634-1640 作者:  Zhang, Rongjie;  Chen, Wenjun;  Teng, Changjiu;  Liao, Wugang;  Liu, Bilu   |  收藏  |  浏览/下载：45/0  |  提交时间：2021/11/22 2D materials  Mica  Ion transport  RRAM  Non-Markov chain   Defect Analysis and Parallel Testing or 3D Hybrid CMOS-Memristor Memory 期刊论文  OAI收割 IEEE TRANSACTIONS ON EMERGING TOPICS IN COMPUTING, 2021, 卷号: 9, 期号: 2, 页码: 745-758 作者:  Liu, Peng;  You, Zhiqiang;  Wu, Jigang;  Elimu, Michael;  Wang, Weizheng   |  收藏  |  浏览/下载：46/0  |  提交时间：2021/12/01 Non-volatile memory  RRAM  CMOL  memristor  testing   Hybrid oxide brain-inspired neuromorphic devices for hardware implementation of artificial intelligence 期刊论文  OAI收割 SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2021, 卷号: 22, 期号: 1, 页码: 326-344 作者:  Wang, Jingrui;  Xia, Zhuge;  Fei, Zhuge   |  收藏  |  浏览/下载：28/0  |  提交时间：2021/12/01 RESISTIVE SWITCHING CHARACTERISTICS  ELECTRONIC SYNAPSE  HIGHLY UNIFORM  HIGH ENDURANCE  LOW-POWER  MEMRISTOR  MEMORY  RRAM  CLASSIFICATION  PLASTICITY   A comprehensive investigation of MoO3 based resistive random access memory 期刊论文  OAI收割 RSC ADVANCES, 2020, 卷号: 10, 期号: 33, 页码: 19337-19345 作者:  Fatheema, Jameela;  Shahid, Tauseef;  Mohammad, Mohammad Ali;  Islam, Amjad;  Malik, Fouzia   |  收藏  |  浏览/下载：36/0  |  提交时间：2020/12/16 SWITCHING CHARACTERISTICS  NONVOLATILE MEMORY  LOW-POWER  PERFORMANCE  MECHANISMS  SUBSTRATE  DEVICES  RRAM   Resistive switching in Al2O3 based trilayer structure with varying parameters via experimentation and computation 期刊论文  OAI收割 AIP ADVANCES, 2020, 卷号: 10, 期号: 11 作者:  Fatheema, Jameela;  Fatima, Sabeen;  Ali, Bilal Jehanzaib;  Mohammad, Mohammad Ali;  Shahid, Tauseef   |  收藏  |  浏览/下载：18/0  |  提交时间：2021/12/01 MEMORY  OXIDE  RRAM  MECHANISM  ALUMINUM   Memristive Synapses for Brain-Inspired Computing 期刊论文  OAI收割 ADVANCED MATERIALS TECHNOLOGIES, 2019, 卷号: 4, 期号: 3 作者:  Wang, Jingrui;  Zhuge, Fei   |  收藏  |  浏览/下载：56/0  |  提交时间：2019/12/18 RESISTIVE-SWITCHING MEMORY  MAGNETIC TUNNEL-JUNCTIONS  LONG-TERM POTENTIATION  PHASE-CHANGE MEMORY  RRAM DEVICES  SYNAPTIC PLASTICITY  CONDUCTANCE LINEARITY  ELECTRONIC SYNAPSES  IMPLEMENTATION  SYSTEM   Recommended Methods to Study Resistive Switching Devices 期刊论文  OAI收割 ADVANCED ELECTRONIC MATERIALS, 2019, 卷号: 5, 期号: 1 作者:  Lanza, Mario;  Wong, H-S Philip;  Pop, Eric;  Ielmini, Daniele;  Strukov, Dimitri   |  收藏  |  浏览/下载：108/0  |  提交时间：2019/12/18 HEXAGONAL BORON-NITRIDE  ALIGNED CARBON NANOTUBES  SPICE COMPACT MODEL  NONVOLATILE MEMORY  RRAM DEVICES  THIN-FILM  DIELECTRIC-BREAKDOWN  MEMRISTIVE BEHAVIOR  PHYSICAL MODEL  NANOSCALE