机构

• 金属研究所 [11]
• 物理研究所 [9]
• 宁波材料技术与工程研... [7]
• 长春光学精密机械与物... [4]
• 昆明植物研究所 [3]
• 中国科学院大学 [3]
• 更多

采集方式

• OAI收割 [46]
• iSwitch采集 [3]

内容类型

• 期刊论文 [49]

发表日期

• 2024 [1]
• 2023 [1]
• 2022 [2]
• 2021 [5]
• 2020 [7]
• 2019 [5]
• 更多

学科主题

• Materials ... [3]
• Physics [3]
• Science & ... [2]
• Chemistry [1]
• Chemistry,... [1]
• Engineerin... [1]
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筛选

浏览/检索结果: 共49条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization 期刊论文  OAI收割 JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2024, 卷号: 171, 页码: 139-146 作者:  Yue, Zhi Yun;  Zhang, Zhi Dong;  Wang, Zhan Jie   |  收藏  |  浏览/下载：15/0  |  提交时间：2024/01/08 Ferroelectric memristor  Ca -doped PZT  Ferroelectric polarization  Oxygen vacancies  Resistive switching   Improving resistive switching effect by embedding gold nanoparticles into ferroelectric thin films 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2023, 卷号: 968, 页码: 7 作者:  Yue, Zhi Yun;  Zhang, Zhi Dong;  Wang, Zhan Jie   |  收藏  |  浏览/下载：18/0  |  提交时间：2024/01/08 PCZT thin films  Au nanoparticles  Ferroelectric polarization  Multi-level data storage  Resistive switching   Existence of bipolar resistive switching with self-rectifying behavior in a p-CuCrO2/n-Si heterostructure 期刊论文  OAI收割 THIN SOLID FILMS, 2022, 卷号: 762 作者:  Cheng, Wangping;  Li, Chenhui;  Zhou, Chen;  He, Yuandi;  Wei, Renhuai   |  收藏  |  浏览/下载：45/0  |  提交时间：2022/12/23 Resistive random access memory  Resistive switching  Self-rectifying behavior  Copper chromium oxide  Thin film  Solution deposition   Understanding and modulation of resistive switching behaviors in PbZr0.52Ti0.48O3/La0.67Sr0.33MnO3/Nb:SrTiO3 multilayer junctions 期刊论文  OAI收割 APPLIED SURFACE SCIENCE, 2022, 卷号: 574, 页码: 11 作者:  Zheng, Hang Yu;  Bai, Yu;  Shao, Yan;  Yu, Hai Yi;  Chen, Bing   |  收藏  |  浏览/下载：27/0  |  提交时间：2022/07/01 Ferroelectric multilayer junction  Resistive switching  Ferroelectric field effect  Depletion layer width   Coupled Current Jumps and Domain Wall Creeps in a Defect-Engineered Ferroelectric Resistive Memory 期刊论文  OAI收割 ADVANCED ELECTRONIC MATERIALS, 2021, 页码: 10 作者:  Huang, Biaohong;  Xie, Zhongshuai;  Feng, Dingshuai;  Li, Lingli;  Li, Xiaoqi   |  收藏  |  浏览/下载：36/0  |  提交时间：2022/07/01 BiFeO3  current jump  domain wall creep  ferroelectric resistive switching  oxygen vacancy  space-charge-limited current   Effects of heavy ion irradiation on Cu/Al2O3/Pt CBRAM devices 期刊论文  OAI收割 MICROELECTRONIC ENGINEERING, 2021, 卷号: 247, 页码: 4 作者:  Su, Chaohui;  Shan, Linbo;  Yang, Dongliang;  Zhao, Yanfei;  Fu, Yujun   |  收藏  |  浏览/下载：35/0  |  提交时间：2021/12/08 ALH-Al2O3 film  CBRAM  Heavy ion irradiation  Resistive switching   Spinodal Decomposition-Driven Endurable Resistive Switching in Perovskite Oxides 期刊论文  OAI收割 ACS APPLIED MATERIALS & INTERFACES, 2021, 卷号: 13, 期号: 26, 页码: 31001-31009 作者:  Liu, Nan;  Cao, Yi;  Zhu, Yin-Lian;  Wang, Yu-Jia;  Tang, Yun-Long   |  收藏  |  浏览/下载：75/0  |  提交时间：2021/10/15 resistive switching  spinodal decomposition  perovskites  atomic force microscopy  transmission electron microscopy   All-Optically Controlled Memristor for Optoelectronic Neuromorphic Computing 期刊论文  OAI收割 ADVANCED FUNCTIONAL MATERIALS, 2021, 卷号: 31, 期号: 4 作者:  Hu, Lingxiang;  Yang, Jing;  Wang, Jingrui;  Cheng, Peihong;  Chua, Leon O.   |  收藏  |  浏览/下载：17/0  |  提交时间：2021/12/01 AMORPHOUS OXIDE SEMICONDUCTOR  RESISTIVE SWITCHING MEMORY  ELECTRONIC-STRUCTURE  SYNAPSES  DEVICE  A-INGAZNO4-X  NETWORKS   Hybrid oxide brain-inspired neuromorphic devices for hardware implementation of artificial intelligence 期刊论文  OAI收割 SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2021, 卷号: 22, 期号: 1, 页码: 326-344 作者:  Wang, Jingrui;  Xia, Zhuge;  Fei, Zhuge   |  收藏  |  浏览/下载：18/0  |  提交时间：2021/12/01 RESISTIVE SWITCHING CHARACTERISTICS  ELECTRONIC SYNAPSE  HIGHLY UNIFORM  HIGH ENDURANCE  LOW-POWER  MEMRISTOR  MEMORY  RRAM  CLASSIFICATION  PLASTICITY   Effects of high energy heavy ion irradiation on resistive switches 期刊论文  OAI收割 MICROELECTRONIC ENGINEERING, 2020, 卷号: 231, 页码: 6 作者:  Guo, Xiangyu;  Liu, Jiande;  Wang, Qi;  He, Deyan   |  收藏  |  浏览/下载：23/0  |  提交时间：2021/12/15 Resistive switching  High energy heavy ion  Concentrated defects  Switching behavior