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• 半导体研究所 [11]
• 物理研究所 [2]
• 长春光学精密机械与物... [2]
• 兰州化学物理研究所 [2]
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• OAI收割 [18]
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• 期刊论文 [18]
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• 2016 [1]
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学科主题

• 半导体材料 [5]
• 半导体物理 [5]
• 材料科学与物理化学 [2]
• Physics, F... [1]

筛选

浏览/检索结果: 共20条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Properties of a-C:H:Si thin films deposited by middle-frequency magnetron sputtering 期刊论文  OAI收割 Applied Surface Science, 2016, 卷号: 379, 页码: 516-522 作者:  Jiang JL(姜金龙);  Wang, Yubao;  Du, Jinfang;  Yang, Hua;  Hao JY(郝俊英) 收藏  |  浏览/下载：44/0  |  提交时间：2016/07/11 a-C:H:Si films  Magnetron sputtering  Structure  Tribological properties   Low temperature magnetron sputtering deposition of hydrogenated microcrystalline silicon thin films without amorphous incubation layers on glass 期刊论文  OAI收割 Journal of Non-Crystalline Solids, 2014, 卷号: 388, 页码: 86-90 作者:  Wang, Linqing;  Wang, Weiyan;  Huang, Jinhua;  Zeng, Yuheng;  Tan, Ruiqin 收藏  |  浏览/下载：28/0  |  提交时间：2015/10/26 mu c-Si:H thin films  Magnetron sputtering  Amorphous incubation layers  Low temperature   Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure 期刊论文  OAI收割 journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125 作者:  Wang C 收藏  |  浏览/下载：86/3  |  提交时间：2011/07/05 Hydrogenated nanocrystalline silicon  Buffer layer  i/p interface  Solar cells  OPEN-CIRCUIT VOLTAGE  A-SI-H  P/I-INTERFACE  MICROCRYSTALLINE SILICON  VAPOR-DEPOSITION  FILMS  CAPACITANCE  EFFICIENCY  CRYSTALLINE  TEMPERATURE   Effects of Substrate Temperature on the Growth of Polycrystalline Si Films Deposited with SiH(4)+Ar 期刊论文  OAI收割 Journal of Materials Science & Technology, 2009, 卷号: 25, 期号: 4, 页码: 489-491 H. Cheng; A. M. Wu; J. Q. Xiao; N. L. Shi; L. S. Wen 收藏  |  浏览/下载：24/0  |  提交时间：2012/04/13 Poly-Si films  ECR-PECVD  Substrate temperature  Ar-dilution  chemical-vapor-deposition  ar-diluted sih4  microcrystalline silicon  optical-properties  h films  plasma  pecvd  hydrogen  silane   Smooth Surface Morphology of Hydrogenated Amorphous Silicon Film Prepared by Plasma Enhanced Chemical Vapor Deposition 期刊论文  OAI收割 PLASMA SCIENCE & TECHNOLOGY, 2009, 卷号: 11, 期号: 5, 页码: 569-575 Yan, X; Feng, F; Zhang, J; Wang, YL 收藏  |  浏览/下载：21/0  |  提交时间：2012/03/24 A-SI-H  THIN-FILMS  ION-BOMBARDMENT  LOW-TEMPERATURE  SILANE PLASMA  GROWTH  PECVD  DIFFUSION  ROUGHNESS  FREQUENCY   The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文  OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G. 收藏  |  浏览/下载：24/0  |  提交时间：2013/03/25 The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress  it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping  a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper  controlling different flow ratio of source gas SiH4 and NH3  and a great deal of tests (ellipsometer  infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators  three different capacitance samples in MIS structure were done  degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation  this result indicated that the defect density of this type SiN x was smaller  and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT  SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.   Nanocrystalline silicon films with high conductivity and the application for pin solar cells 期刊论文  iSwitch采集 Vacuum, 2006, 卷号: 81, 期号: 1, 页码: 126-128 作者:  Cui Min;  Zhang Weija;  Wang Tianmin;  Jin Fei;  Li Guohua 收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12 Nc-si : h  Conductivity  Pecvd  Films  Solar cells   Properties of n-type mu c-si : h films by cat-cvd for c-si heterojunction solar cells 期刊论文  iSwitch采集 Thin solid films, 2006, 卷号: 501, 期号: 1-2, 页码: 141-143 作者:  Zhang, Q;  Zhu, M;  Liu, F;  Liu, J 收藏  |  浏览/下载：27/0  |  提交时间：2019/05/10 Hwcvd  N-type mu c-si : h films  Heterojunction solar cells   Temperature-enhanced ultraviolet emission in ZnO thin film (EI CONFERENCE) 会议论文  OAI收割 Zhang Y. J.; Xu C. S.; Liu Y. C.; Liu Y. X.; Wang G. R.; Fan X. W. 收藏  |  浏览/下载：27/0  |  提交时间：2013/03/25 We have studied the structural and optical properties of ZnO thin films prepared by thermal oxidation of ZnS films deposited by plasma assisted electron-beam evaporation on Si(1 0 0) substrates. The transformation from zinc blende ZnS to hexagonal wurtzite ZnO is confirmed by Raman and X-ray diffraction (XRD) measurement. For the sample thermally oxidized at 600 C for 2 h  a novel UV emission peak Ix located at 3.22 eV (385 nm) has been observed. The temperature-dependent photoluminescence spectra show that the integrated intensity of Ix increases exponentially with increasing temperatures within the measuring temperature range  from 80 to 300 K  but the peak position remains nearly constant. We explain this behavior in terms of electron tunneling into the radiative recombination centers.   Nanocrystalline silicon films with high conductivity and the application for PIN solar cells 期刊论文  OAI收割 vacuum, 2006, 卷号: 81, 期号: 1, 页码: 126-128 Min C (Cui Min); Zhang WJ (Zhang Weija); Wang TM (Wang Tianmin); Jin F (Jin Fei); Li GH (Li Guohua); Ding K (Ding Kun) 收藏  |  浏览/下载：41/0  |  提交时间：2010/04/11 nc-Si : H  conductivity  PECVD  films  solar cells