中国科学院机构知识库网格系统: 检索

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	Formation of ultra-thin silicon-on-insulator materials by low-dose low-energy oxygen ion implantation 期刊论文 OAI收割 CHEMICAL PHYSICS LETTERS, 2003, 卷号: 367, 期号: 1-2, 页码: 44-48 Wang, X; Chen, J; Dong, YM; Chen, M; Wang, X 收藏 \| 浏览/下载：15/0 \| 提交时间：2012/03/24 DISLOCATION DENSITY SIMOX WAFERS LAYERS
	Fabrication of device-grade silicon-on-insulator material from appropriate matches of low oxygen implantation dose and acceleration energy 期刊论文 OAI收割 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 卷号: 21, 期号: 5, 页码: 2001-2010 Chen, M; Wang, X; Chen, J; Dong, YM; Yi, WB; Liu, XH; Wang, X 收藏 \| 浏览/下载：13/0 \| 提交时间：2012/03/24 OXIDATION ITOX PROCESS BURIED OXIDE LAYERS SIMOX WAFERS ION-IMPLANTATION TEMPERATURE SEPARATION
	Fabrication of device-grade separation-by-implantation-of-oxygen materials by optimizing dose-energy match 期刊论文 OAI收割 JOURNAL OF MATERIALS RESEARCH, 2002, 卷号: 17, 期号: 7, 页码: 1634-1643 Chen,M; Yu,YH; Wang,X; Wang,X; Chen,J; Liu,XH; Dong,YM 收藏 \| 浏览/下载：29/0 \| 提交时间：2012/03/24 BURIED OXIDE ION-IMPLANTATION SIMOX SILICON LAYERS TEMPERATURE WAFERS
	Dose-energy match for the formation of high-integrity buried oxide layers in low-dose separation-by-implantation-of-oxygen materials 期刊论文 OAI收割 APPLIED PHYSICS LETTERS, 2002, 卷号: 80, 期号: 5, 页码: 880-882 Chen, M; Wang, X; Chen, J; Liu, XH; Dong, YM; Yu, YH; Wang, X 收藏 \| 浏览/下载：15/0 \| 提交时间：2012/03/24 SIMOX WAFERS TEMPERATURE
	Formation of silicon islands free buried oxide layer by energy optimization at very low dose ion implantation 期刊论文 OAI收割 SURFACE & COATINGS TECHNOLOGY, 2002, 卷号: 158, 页码: 180-185 Wang, X; Chen, M; Dong, YM; Chen, J; Wang, X; Liu, XH 收藏 \| 浏览/下载：9/0 \| 提交时间：2012/03/24 SIMOX WAFERS DISLOCATION