中国科学院机构知识库网格系统: 检索

浏览/检索结果: 共4条，第1-4条

帮助

条数/页：排序方式：
	Recent research results on deep level defects in semi-insulating InP - Application to improve material quality 会议论文 OAI收割 12th international conference on indium phosphide and related materials, princeton, nj, may 07-11, 2006 Zhao, YW (Zhao, Youwen); Dong, ZY (Dong, Zhiyuan); Dong, HW (Dong, Hongwei); Sun, NF (Sun, Niefeng); Sun, TN (Sun, Tongnian) 收藏 \| 浏览/下载：66/12 \| 提交时间：2010/03/29 STIMULATED CURRENT SPECTROSCOPY CURRENT TRANSIENT SPECTROSCOPY FE-DOPED INP POINT-DEFECTS COMPENSATION TEMPERATURE DONORS TRAPS
	Growth of high quality semi-insulating InP single crystal by suppression of compensation defects 期刊论文 OAI收割 journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 75-77 Zhao YW; Dong ZY; Duan ML; Sun WR; Yang ZX 收藏 \| 浏览/下载：46/0 \| 提交时间：2010/04/11 indium phosphide defect semi-insualting STIMULATED CURRENT SPECTROSCOPY CURRENT TRANSIENT SPECTROSCOPY SEMI-INSULATING INP DEEP-LEVEL DEFECTS FE
	Electron irradiation-induced defects in InP pre-annealed at high temperature 期刊论文 OAI收割 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 380-383 Zhao YW (Zhao Y. W.); Dong ZY (Dong Z. Y.); Deng AH (Deng A. H.) 收藏 \| 浏览/下载：51/0 \| 提交时间：2010/04/11 indium phosphide defect irradiation THERMALLY STIMULATED CURRENT UNDOPED SEMIINSULATING INP DEEP-LEVEL DEFECTS FRENKEL PAIRS FE SPECTROSCOPY PHOSPHIDE AMBIENT TRAPS
	Improvement of the electrical property of semi-insulating InP by suppression of compensation defects 会议论文 OAI收割 17th international conference on indium phosphide and related materials, glasgow, scotland, may 08-12, 2005 Zhao, YW; Dong, ZY 收藏 \| 浏览/下载：234/68 \| 提交时间：2010/03/29 ENCAPSULATED CZOCHRALSKI INP SEMICONDUCTOR COMPOUND-CRYSTALS STIMULATED CURRENT SPECTROSCOPY CURRENT TRANSIENT SPECTROSCOPY DEEP-LEVEL DEFECTS ANNEALING AMBIENT POINT-DEFECTS FE PHOSPHIDE DONORS