机构

• 物理研究所 [7]
• 力学研究所 [1]

采集方式

• OAI收割 [8]

内容类型

• 期刊论文 [8]

发表日期

• 2012 [2]
• 2011 [1]
• 2009 [2]
• 2008 [1]
• 2006 [1]
• 2005 [1]
• 更多

学科主题

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浏览/检索结果: 共8条，第1-8条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Crystal growth of AlN: Effect of SiC substrate 期刊论文  OAI收割 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2012, 卷号: 15, 期号: 4, 页码: 401 Zuo, SB; Chen, XL; Jiang, LB; Bao, HQ; Wang, J; Guo, LW; Wang, WJ 收藏  |  浏览/下载：26/0  |  提交时间：2013/09/17 BULK ALUMINUM NITRIDE  SUBLIMATION GROWTH  SINGLE-CRYSTALS  NATIVE ALN  NUCLEATION  MORPHOLOGY  EPITAXY   Growth of AlN single crystals on 6H-SiC (0001) substrates with AlN MOCVD buffer layer 期刊论文  OAI收割 CRYSTAL RESEARCH AND TECHNOLOGY, 2012, 卷号: 47, 期号: 2, 页码: 139 Zuo, SB; Wang, J; Chen, XL; Jin, SF; Jiang, LB; Bao, HQ; Guo, LW; Sun, W; Wang, WJ 收藏  |  浏览/下载：29/0  |  提交时间：2013/09/17 BULK ALUMINUM NITRIDE  SUBLIMATION GROWTH  OPTICAL-PROPERTIES  SEEDED GROWTH  NUCLEATION  EPITAXY  FILMS  GAN   Effect of the seed crystallographic orientation on AlN bulk crystal growth by PVT method 期刊论文  OAI收割 CRYSTAL RESEARCH AND TECHNOLOGY, 2011, 卷号: 46, 期号: 5, 页码: 455 Wang, WJ; Zuo, SB; Bao, HQ; Wang, J; Jiang, LB; Chen, XL 收藏  |  浏览/下载：29/0  |  提交时间：2013/09/17 PHYSICAL VAPOR TRANSPORT  SUBLIMATION GROWTH  ALUMINUM NITRIDE   Factors affecting the formation of misoriented domains in 6H-SiC single crystals grown by PVT method 期刊论文  OAI收割 CRYSTAL RESEARCH AND TECHNOLOGY, 2009, 卷号: 44, 期号: 4, 页码: 357 Peng, TH; Yang, H; Jian, JK; Wang, WJ; Wang, WY; Chen, XL 收藏  |  浏览/下载：30/0  |  提交时间：2013/09/17 SEEDED SUBLIMATION GROWTH  PHYSICAL VAPOR TRANSPORT  SILICON-CARBIDE  TEMPERATURE-GRADIENT  SIC POLYTYPES  BOULES  6H   Debye temperature of 4H-SiC determined by X-ray powder diffraction 期刊论文  OAI收割 POWDER DIFFRACTION, 2009, 卷号: 24, 期号: 4, 页码: 311 Peng, TH; Lou, YF; Jin, SF; Wang, WY; Wang, WJ; Wang, G; Chen, XL 收藏  |  浏览/下载：25/0  |  提交时间：2013/09/17 SIC BULK CRYSTAL  SILICON-CARBIDE  SUBLIMATION GROWTH  PVT METHOD  GRAPHITIZATION  REFINEMENT   Progress In Modeling Of Fluid Flows In Crystal Growth Processes 期刊论文  OAI收割 Progress In Natural Science, 2008, 页码: 1465-1473 作者:  Chen QS(陈启生);  Jiang YN(姜燕妮);  Yan JY(颜君毅);  Qin M(秦明);  Chen QS(陈启生) 收藏  |  浏览/下载：733/52  |  提交时间：2009/08/03 Modeling  Crystal Growth  Fluid Flow  Czochralski Growth  Ammonothermal Growth  Physical Vapor Transport  Transverse Magnetic-Field  Physical-Vapor Transport  Sic-Bulk Growth  Silicon Czochralski Furnace  Thermal-Capillary Analysis  Radiative Heat-Transfer  Sublimation Growth  Numerical-Simulation  Ammonothermal Growth  Oxygen Distribution   Effects of post-thermal treatment on quality of SiC grown by PVT method 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2006, 卷号: 23, 期号: 8, 页码: 2273 Zhu, LN; Chen, XL; Yang, H; Peng, TH; Ni, DQ; Hu, BQ 收藏  |  浏览/下载：23/0  |  提交时间：2013/09/17 CARBIDE SINGLE-CRYSTALS  SILICON-CARBIDE  SUBLIMATION GROWTH  VAPOR TRANSPORT  DEFECTS  INGOTS   New types of defects in SiC grown by the PVT method 期刊论文  OAI收割 JOURNAL OF PHYSICS-CONDENSED MATTER, 2005, 卷号: 17, 期号: 10, 页码: L85 Zhu, LN; Li, HQ; Hu, BQ; Wu, X; Chen, XL 收藏  |  浏览/下载：14/0  |  提交时间：2013/09/24 MODIFIED-LELY METHOD  SILICON-CARBIDE  SINGLE-CRYSTALS  SUBLIMATION GROWTH  BULK CRYSTALS  PHASE  VAPOR  SEMICONDUCTOR  MICROPIPES  INCLUSIONS