机构

• 金属研究所 [3]
• 长春光学精密机械与物... [1]
• 大连化学物理研究所 [1]
• 兰州化学物理研究所 [1]

采集方式

• OAI收割 [6]

内容类型

• 期刊论文 [5]
• 会议论文 [1]

发表日期

• 2017 [1]
• 2015 [2]
• 2012 [1]
• 2010 [1]
• 2008 [1]

学科主题

• 材料科学与物理化学 [1]

筛选

浏览/检索结果: 共6条，第1-6条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 H-2-Ar dilution for improved c-Si quantum dots in P-doped SiNx:H thin film matrix 期刊论文  OAI收割 APPLIED SURFACE SCIENCE, 2017, 卷号: 396, 页码: 235-242 作者:  Liu, Jia;  Zhang, Weijia;  Liu, Shengzhong (Frank)   |  收藏  |  浏览/下载：27/0  |  提交时间：2019/06/20 C-si Quantum Dot  Sinx:h Thin Film  Phosphorus-doping  Pecvd   The microstructure and optical properties of SiNx deposited by linear microwave chemical vapor deposition 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 6 作者:  Zhang Jian;  Ba DeChun;  Zhao ChongLing;  Liu Kun;  Du GuangYu   |  收藏  |  浏览/下载：7/0  |  提交时间：2021/02/02 SILICON-NITRIDE FILMS  THIN-FILMS  PLASMA  PHOTOLUMINESCENCE  TEMPERATURE  SiNx thin film  linear microwave chemical vapor deposition  refractivity  deposition rate   The microstructure and optical properties of SiNx deposited by linear microwave chemical vapor deposition 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 6 作者:  Zhang Jian;  Ba DeChun;  Zhao ChongLing;  Liu Kun;  Du GuangYu   |  收藏  |  浏览/下载：35/0  |  提交时间：2021/02/02 SILICON-NITRIDE FILMS  THIN-FILMS  PLASMA  PHOTOLUMINESCENCE  TEMPERATURE  SiNx thin film  linear microwave chemical vapor deposition  refractivity  deposition rate   The effects of nanoscaled amorphous Si and SiNx protective layers on the atomic oxygen resistant and tribological properties of Ag film 期刊论文  OAI收割 Applied Surface Science, 2012, 卷号: 258, 期号: 15, 页码: 5683-5688 作者:  Hu M(胡明);  Gao XM(高晓明);  Sun JY(孙嘉奕);  Weng LJ(翁立军);  Zhou F(周峰) 收藏  |  浏览/下载：18/0  |  提交时间：2013/07/12 Atomic oxygen resistance  Tribological properties  Ag film  Amorphous Si and SiNx protective film   How thick SiO(2) cap layer is needed to achieve strong visible photoluminescence from SiO(2)-buffered SiN(x) films? 期刊论文  OAI收割 Physica E-Low-Dimensional Systems & Nanostructures, 2010, 卷号: 42, 期号: 8, 页码: 2016-2020 M. Xu; Q. Y. Chen; S. Xu; K. Ostrikov; Y. Wei; Y. C. Ee 收藏  |  浏览/下载：22/0  |  提交时间：2012/04/13 SiNx film  SiO(2)  Annealing  Photoluminescence  silicon oxynitride  si0.7ge0.3 layers  defect spectrum  nanostructures  luminescence  morphology  devices  origin  growth   ZnO thin film grown on glass by metal-organic chemical vapor deposition (EI CONFERENCE) 会议论文  OAI收割 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008, March 24, 2008 - March 27, 2008, Shanghai, China 作者:  Wang C. 收藏  |  浏览/下载：154/0  |  提交时间：2013/03/25 ZnO thin film was deposited on the substrate of Corning glass by metal-organic chemical vapor deposition (MOCVD)[1  2  3] with a buffer layer of SiNx grown by plasma enhanced chemical vapor deposition. The quality of ZnO film was studied by X-ray diffraction and photoluminescence measurement. We found strong diffraction (0 0 2) peak at 34.50  indicating that the ZnO film was strongly C-oriented. The full-width at half maximum of (0 0 2) peak was 0.179. 2008 IEEE.