机构

• 国家空间科学中心 [2]
• 新疆理化技术研究所 [2]
• 中国科学院大学 [2]
• 自动化研究所 [1]
• 近代物理研究所 [1]

采集方式

• OAI收割 [6]
• iSwitch采集 [2]

内容类型

• 期刊论文 [8]

发表日期

• 2020 [1]
• 2019 [1]
• 2016 [2]
• 2015 [3]
• 2013 [1]

学科主题

筛选

浏览/检索结果: 共8条，第1-8条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Single-Event Effects in Pinned Photodiode CMOS Image Sensors: SET and SEL 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 8, 页码: 1861-1868 作者:  Cai, YL (Cai, Yulong)[ 1,2 ];  Wen, L (Wen, Lin)[ 3 ];  Li, YD (Li, Yudong)[ 3 ];  Guo, Q (Guo, Qi)[ 3 ];  Zhou, D (Zhou, Dong)[ 3 ]   |  收藏  |  浏览/下载：19/0  |  提交时间：2020/09/09 Complementary metal-oxide-semiconductor  (CMOS) image sensors (CIS)  heavy ions  pulsed laser  single-event latchup (SEL)  single-event transient (SET)   Synergistic effect of enhanced low-dose-rate sensitivity and single event transient in bipolar voltage comparator LM139 期刊论文  OAI收割 JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2019, 卷号: 56, 期号: 2, 页码: 172-178 作者:  Yao, S (Yao, Shuai)[ 1,2,3 ];  Lu, W (Lu, Wu)[ 1,2,4 ];  Yu, X (Yu, Xin)[ 1,2 ];  Wang, X (Wang, Xin)[ 1,2 ];  Li, XL (Li, Xiaolong)[ 1,2,3 ]   |  收藏  |  浏览/下载：99/0  |  提交时间：2019/02/25 Enhanced low dose rate sensitivity  single event transient  bipolar voltage comparator  synergistic effect   Comparison of single-event transients of t-gate core and io device in 130nm partially depleted silicon-on-insulator technology 期刊论文  iSwitch采集 Ieice electronics express, 2016, 卷号: 13, 期号: 12, 页码: 11 作者:  Zheng Yunlong;  Dai Ruofan;  Chen Zhuojun;  Sun Shulong;  Wang Zheng 收藏  |  浏览/下载：47/0  |  提交时间：2019/05/09 Direct measurement  Heavy ion irradiation  Silicon on insulator technology  Single event transient  Mosfet  Radiation harden by design   Collection of charge in NMOS from single event effect 期刊论文  OAI收割 IEICE ELECTRONICS EXPRESS, 2016, 卷号: 13, 期号: 8, 页码: 1-8 作者:  Wang, Jingqiu;  Lin, Fujiang;  Wang, Donglin;  Song, Wenna;  Liu, Li   |  收藏  |  浏览/下载：27/0  |  提交时间：2016/09/30 Single Event Effect  Ultra Deep Sub-micron  Double Exponential Transient Current Model  Multi-dimensional   Heavy-Ion Microbeam Fault Injection into SRAM-Based FPGA Implementations of Cryptographic Circuits 期刊论文  OAI收割 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 卷号: 62, 页码: 1341-1348 作者:  Shao, Cuiping;  Li, Huiyun;  Xu, Guoqing;  Guo, Jinlong;  Dai, Liang   |  收藏  |  浏览/下载：28/0  |  提交时间：2018/05/31 Cryptographic integrated circuits  fault injection  heavy ion  microbeam  single-event transient (SET)   Comparative research on "high currents" induced by single event latch-up and transient-induced latch-up 期刊论文  iSwitch采集 Chinese physics b, 2015, 卷号: 24, 期号: 4, 页码: 6 作者:  Chen Rui;  Han Jian-Wei;  Zheng Han-Sheng;  Yu Yong-Tao;  Shangguang Shi-Peng 收藏  |  浏览/下载：34/0  |  提交时间：2019/05/10 Single event latch-up  Transient-induced latch-up  Electro-static discharge  Pulsed laser   Comparative research on "high currents" induced by single event latch-up and transient-induced latch-up 期刊论文  OAI收割 CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 4, 页码: 46103 作者:  Chen Rui;  Han Jian-Wei;  Zheng Han-Sheng 收藏  |  浏览/下载：104/0  |  提交时间：2015/09/28 single event latch-up  transient-induced latch-up  electro-static discharge  pulsed laser   A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar transistor 期刊论文  OAI收割 CHINESE PHYSICS B, 2013, 卷号: 22, 期号: 5, 页码: 56103 作者:  Sun Ya-Bin;  Fu Jun;  Xu Jun;  Wang Yu-Dong;  Zhou Wei 收藏  |  浏览/下载：21/0  |  提交时间：2015/10/29 single event transient (SET)  pulsed laser  charge collection  SiGe heterojunction bipolar transistor (HBT)