机构

• 物理研究所 [8]
• 半导体研究所 [6]
• 金属研究所 [4]
• 苏州纳米技术与纳米仿... [2]
• 长春光学精密机械与物... [1]
• 高能物理研究所 [1]
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采集方式

• OAI收割 [22]

内容类型

• 期刊论文 [20]
• 会议论文 [2]

发表日期

• 2021 [3]
• 2019 [1]
• 2015 [1]
• 2011 [1]
• 2010 [1]
• 2009 [1]
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学科主题

• 半导体材料 [4]
• Crystallog... [1]
• 光电子学 [1]
• 半导体物理 [1]

筛选

浏览/检索结果: 共22条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序发表日期升序发表日期降序题名升序题名降序作者升序作者降序 Tensile strain induced texture evolution in a Ni & ndash;Mo alloy with extremely fine nanotwinned columnar grains 期刊论文  OAI收割 MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2021, 卷号: 812, 页码: 11 作者:  Li, J. X.;  Shi, Y-N;  You, Z. S.;  Li, X. Y.   |  收藏  |   Tensile strain induced texture evolution in a Ni & ndash;Mo alloy with extremely fine nanotwinned columnar grains 期刊论文  OAI收割 MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2021, 卷号: 812, 页码: 11 作者:  Li, J. X.;  Shi, Y-N;  You, Z. S.;  Li, X. Y.   |  收藏  |   Tensile strain induced texture evolution in a Ni & ndash;Mo alloy with extremely fine nanotwinned columnar grains 期刊论文  OAI收割 MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2021, 卷号: 812, 页码: 11 作者:  Li, J. X.;  Shi, Y-N;  You, Z. S.;  Li, X. Y.   |  收藏  |   Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field 期刊论文  OAI收割 Nanoscale Research Letters, 2019, 卷号: 14, 期号: 1 作者:  Li,Dabing;  Feng,Zhe Chuan;  Luo,Xuguang;  Wang,Yong;  Kai,Cuihong   |  收藏  |   Control of threading dislocations by strain engineering in GaInP buffers grown on GaAs substrates 期刊论文  OAI收割 THIN SOLID FILMS, 2015, 卷号: 593, 页码: 5 作者:  Li, KL(李奎龙);  Sun, YR(孙玉润);  Dong, JR(董建荣);  He, Y(何洋);  Zeng, XL(曾徐路) 收藏  |   Tensile behavior of columnar grained Cu with preferentially oriented nanoscale twins 期刊论文  OAI收割 Acta Materialia, 2011, 卷号: 59, 期号: 18, 页码: 6927-6937 Z. S. You; L. Lu; K. Lu 收藏  |   Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices 期刊论文  OAI收割 chinese physics b, 2010, 卷号: 19, 期号: 1, 页码: art. no. 017307 作者:  Zhang SM;  Wang LJ;  Wang YT;  Yang H;  Wang LJ 收藏  |   High-resolution X-ray diffraction analysis on HVPE-grown thick GaN layers 会议论文  OAI收割 2nd International Symposium on Growth of III Nitrides (ISGN-2), Laforet Shuzenji, JAPAN, JUL 07-09, 2008 作者:  Hu XJ (胡晓剑);  Xu K (徐科);  Yang H (杨辉);  Wang JF (王建峰);  Xu Y (徐俞) 收藏  |   Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 294, 期号: 2, 页码: #REF! 作者:  Chen, ZT;  Xu, K;  Guo, LP;  Yang, ZJ;  Su, YY 收藏  |   Strained state of the layer system depending on the SiGe layer thickness by micro-Raman mapping 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 264, 期号: 1-3, 页码: 104 Zheng, XH; Chen, H; Li, YK; Huang, Q; Zhou, JM 收藏  |