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期刊论文 [20]
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Tensile strain induced texture evolution in a Ni & ndash;Mo alloy with extremely fine nanotwinned columnar grains
期刊论文
OAI收割
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2021, 卷号: 812, 页码: 11
作者:
Li, J. X.
;
Shi, Y-N
;
You, Z. S.
;
Li, X. Y.
  |  
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2021/10/15
Extremely-fine nanograined alloy
Nanotwin
Uniaxial tensile test
Texture
Detwinning
Threading dislocation
Tensile strain induced texture evolution in a Ni & ndash;Mo alloy with extremely fine nanotwinned columnar grains
期刊论文
OAI收割
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2021, 卷号: 812, 页码: 11
作者:
Li, J. X.
;
Shi, Y-N
;
You, Z. S.
;
Li, X. Y.
  |  
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2021/10/15
Extremely-fine nanograined alloy
Nanotwin
Uniaxial tensile test
Texture
Detwinning
Threading dislocation
Tensile strain induced texture evolution in a Ni & ndash;Mo alloy with extremely fine nanotwinned columnar grains
期刊论文
OAI收割
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2021, 卷号: 812, 页码: 11
作者:
Li, J. X.
;
Shi, Y-N
;
You, Z. S.
;
Li, X. Y.
  |  
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2021/10/15
Extremely-fine nanograined alloy
Nanotwin
Uniaxial tensile test
Texture
Detwinning
Threading dislocation
Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field
期刊论文
OAI收割
Nanoscale Research Letters, 2019, 卷号: 14, 期号: 1
作者:
Li,Dabing
;
Feng,Zhe Chuan
;
Luo,Xuguang
;
Wang,Yong
;
Kai,Cuihong
  |  
收藏
  |  
浏览/下载:135/0
  |  
提交时间:2019/08/21
Refractive index
AlN
Threading dislocation density
Nanoscale strain field around dislocations
Control of threading dislocations by strain engineering in GaInP buffers grown on GaAs substrates
期刊论文
OAI收割
THIN SOLID FILMS, 2015, 卷号: 593, 页码: 5
作者:
Li, KL(李奎龙)
;
Sun, YR(孙玉润)
;
Dong, JR(董建荣)
;
He, Y(何洋)
;
Zeng, XL(曾徐路)
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2015/12/31
Metamorphic GaInP buffers
Threading dislocations
X-ray diffraction
Strain relaxation
Dislocation annihilation
Tensile behavior of columnar grained Cu with preferentially oriented nanoscale twins
期刊论文
OAI收割
Acta Materialia, 2011, 卷号: 59, 期号: 18, 页码: 6927-6937
Z. S. You
;
L. Lu
;
K. Lu
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2012/04/13
Nanoscale twins
Threading dislocation
Grain size effect
Ductility
Work hardening
strain-rate sensitivity
centered-cubic metals
dynamic
plastic-deformation
nano-scale twins
nanotwinned copper
nanocrystalline metals
nanostructured metals
mechanical-properties
maximum strength
size dependence
Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices
期刊论文
OAI收割
chinese physics b, 2010, 卷号: 19, 期号: 1, 页码: art. no. 017307
作者:
Zhang SM
;
Wang LJ
;
Wang YT
;
Yang H
;
Wang LJ
收藏
  |  
浏览/下载:212/3
  |  
提交时间:2010/04/05
GaN
light emitting diode
surface treatment
leakage current
THREADING DISLOCATION DENSITIES
LAYERS
NI/AU
LEDS
High-resolution X-ray diffraction analysis on HVPE-grown thick GaN layers
会议论文
OAI收割
2nd International Symposium on Growth of III Nitrides (ISGN-2), Laforet Shuzenji, JAPAN, JUL 07-09, 2008
作者:
Hu XJ (胡晓剑)
;
Xu K (徐科)
;
Yang H (杨辉)
;
Wang JF (王建峰)
;
Xu Y (徐俞)
收藏
  |  
浏览/下载:225/38
  |  
提交时间:2011/03/14
High-resolution X-ray diffraction (HR-XRD)
Kaganer model
Modified Kaganer model
Mosaic model
Threading dislocation density
Hydride vapor phase epitaxy (HVPE)
Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition
期刊论文
OAI收割
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 294, 期号: 2, 页码: #REF!
作者:
Chen, ZT
;
Xu, K
;
Guo, LP
;
Yang, ZJ
;
Su, YY
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2016/04/12
rocking curve
stresses
threading dislocation
GaN thin films
Strained state of the layer system depending on the SiGe layer thickness by micro-Raman mapping
期刊论文
OAI收割
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 264, 期号: 1-3, 页码: 104
Zheng, XH
;
Chen, H
;
Li, YK
;
Huang, Q
;
Zhou, JM
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2013/09/24
MOLECULAR-BEAM EPITAXY
THREADING DISLOCATION DENSITY
BUFFER LAYER
GROWTH
FILMS