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浏览/检索结果: 共24条，第1-10条 帮助

条数/页： 排序方式：
Computation of Analytical Derivatives for Airborne TEM Inversion Using a Cole-Cole Parameterization Based on the Current Waveform of the Transmitter 期刊论文  OAI收割
SENSORS, 2023, 卷号: 23, 期号: 1, 页码: 18
作者:  Lei, Da;  Ren, Hao;  Fu, Changmin;  Wang, Zhongxing;  Zhen, Qihui
  |  收藏  |  浏览/下载：26/0  |  提交时间：2023/03/30
Transient Current Analysis of Silicon Carbide Neutron Detector Using SRIM and TCAD 期刊论文  OAI收割
IEEE SENSORS JOURNAL, 2022, 卷号: 22
作者:  Zhang, Lilong;  Wang, Ying;  Guo, Haomin;  Yu, Chenghao;  Hu, Haifan
  |  收藏  |  浏览/下载：42/0  |  提交时间：2022/12/23
Analysis of Transient Operating Characteristics of the 10 Kv Tri-Axial HTS Cable Under Fault Current 期刊论文  OAI收割
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2021, 卷号: 31
作者:  Guan, Guangyu;  Feng, Bin;  Ding, Kaizhong;  Zhu, Jiahui;  Wei, Defu
  |  收藏  |  浏览/下载：54/0  |  提交时间：2021/11/15
Intense terahertz radiation from relativistic laser–plasma interactions 期刊论文  iSwitch采集
Plasma physics and controlled fusion, 2016, 卷号: 59, 期号: 1
作者:  Liao,G Q;  Li,Y T;  Li,C;  Liu,H;  Zhang,Y H
收藏  |  浏览/下载：70/0  |  提交时间：2019/05/09
Collection of charge in NMOS from single event effect 期刊论文  OAI收割
IEICE ELECTRONICS EXPRESS, 2016, 卷号: 13, 期号: 8, 页码: 1-8
作者:  Wang, Jingqiu;  Lin, Fujiang;  Wang, Donglin;  Song, Wenna;  Liu, Li
  |  收藏  |  浏览/下载：28/0  |  提交时间：2016/09/30
The Electrochemical and Morphological Characteristics of Single Metastable pit for 304 Stainless Steel under Potentiostatic Polarization 期刊论文  OAI收割
INTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCE, 2016, 卷号: 11, 期号: 3, 页码: 2326-2334
Guan, L.; Zhou, Y.; Zhang, B.; Wang, J. Q.; Han, E. -H.; Ke, W.
收藏  |  浏览/下载：25/0  |  提交时间：2016/04/21
Activation of phosphatidylinositol-linked D1-like receptors increases spontaneous glutamate release in rat somatosensory cortical neurons in vitro 期刊论文  OAI收割
BRAIN RESEARCH, 2010, 卷号: 1343, 页码: 20-27
作者:  Chu, Hong-Yuan;  Yang, Zhi;  Zhao, Bin;  Jin, Guo-Zhang;  Hu, Guo-Yuan
  |  收藏  |  浏览/下载：23/0  |  提交时间：2019/01/08
Characteristics of ZnMgO-based metal-semiconductor-metal photodetectors (EI CONFERENCE) 会议论文  OAI收割
International Symposium on Photoelectronic Detection and Imaging, ISPDI 2007: Photoelectronic Imaging and Detection, September 9, 2007 - September 12, 2007, Beijing, China
作者:  Zhang J.;  Li B.;  Li B.;  Li B.;  Zhao Y.
收藏  |  浏览/下载：23/0  |  提交时间：2013/03/25
In recent years  ZnMgO semiconductor alloys  with a direct bandgap tunable between 3.37 eV and 7.8 eV  become one of the most suitable materials for the fabrication of ultraviolet detectors. In this paper  we have fabricated metal-semiconductor-metal photodetectors on 1-m thick Zn 0.8Mg0.2O films. The interdigital metal electrodes are 500 m long and 5 m wide with an interelectrode spacing 2 m  5 m and 10 m  respectively. Zn0.8Mg0.2O films were grown on quartz by ratio frequency magnetron sputtering at 500C. Dark current  spectral responsivity and pulse response were carried out for the devices with different finger pitches. All the photodetectors showed the peak responsivity at 330 nm and the ultraviolet-visible rejection ratio (R330 nm/R400 nm) is more than four orders of magnitude at 3 V bias. For the device with 2 m finger pitch  the detectivity was calculated as 4.21011 cm Hz 1/2/W at 330 nm. Furthermore  the transient response measurement for all devices revealed similar rise time of 10 ns. The 90%-10% fall times are 130 ns  170 ns and 230 ns for the devices with different finger pitches of 2 m  5 m and 10 m  respectively..  
Development of current-based microscopic defect analysis method using optical filling techniques for the defect study on heavily irradiated high-resistivity si sensors/detectors 期刊论文  iSwitch采集
Materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 283-287
作者:  Li, Z.;  Li, C. J.
收藏  |  浏览/下载：20/0  |  提交时间：2019/05/12