机构

• 半导体研究所 [6]
• 合肥物质科学研究院 [3]
• 物理研究所 [1]
• 化学研究所 [1]
• 上海药物研究所 [1]

采集方式

• OAI收割 [8]
• iSwitch采集 [4]

内容类型

• 期刊论文 [12]

发表日期

• 2024 [1]
• 2021 [1]
• 2018 [3]
• 2016 [1]
• 2009 [2]
• 2008 [4]
• 更多

学科主题

• 半导体物理 [3]

筛选

浏览/检索结果: 共12条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 The study on two different design and fabrication of visible light photodetection based on In2Se3-WS2 heterojunction 期刊论文  OAI收割 OPTICAL MATERIALS, 2024, 卷号: 149, 页码: 10 作者:  Sheng, Qidi;  Gu, Qigang;  Li, Shubing;  Wang, Qiangfei;  Zhou, Xuan   |  收藏  |  浏览/下载：35/0  |  提交时间：2024/05/31 Two-dimensional semiconductor materials  Transition metal dichaldogenides(TMDs)  In2Se3  Photoelec-tric detection  Heterojunctions   Single crystal growth of GaSe via bismuth flux method and its air-stability 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2021, 卷号: 562 作者:  Chu, Weiwei;  Yang, Jiyong;  Li, Liang;  Zhu, Xiangde;  Tian, Mingliang   |  收藏  |  浏览/下载：32/0  |  提交时间：2021/05/10 Flux method  Semiconductor  Two-dimensional materials   Multifunctional two-dimensional semiconductors SnP3: universal mechanism of layer-dependent electronic phase transition 期刊论文  OAI收割 JOURNAL OF PHYSICS-CONDENSED MATTER, 2018, 卷号: 30, 期号: 47, 页码: 9 作者:  Gong, Peng-Lai;  Zhang, Fang;  Huang, Liang-Feng;  Zhang, Hu;  Li, Liang   |  收藏  |  浏览/下载：50/0  |  提交时间：2019/12/25 metal-to-semiconductor transition  lone-pair electrons  two-dimensional SnP3   2D graphdiyne materials: challenges and opportunities in energy field 期刊论文  OAI收割 SCIENCE CHINA-CHEMISTRY, 2018, 卷号: 61, 期号: 7, 页码: 765-786 作者:  Xue, Yurui;  Li, Yuliang;  Zhang, Jin;  Liu, Zhongfan;  Zhao, Yuliang   |  收藏  |  浏览/下载：51/0  |  提交时间：2019/04/08 Graphdiyne  Semiconductor  Two-dimensional Carbon Materials  Nanostructure   Multifunctional Binary Monolayers GexPy: Tunable Band Gap, Ferromagnetism, and Photocatalyst for Water Splitting 期刊论文  OAI收割 ACS APPLIED MATERIALS & INTERFACES, 2018, 卷号: 10, 期号: 23, 页码: 19897-19905 作者:  Li, Pengfei;  Zhang, Wei;  Li, Dongdong;  Liang, Changhao;  Zeng, Xiao Cheng   |  收藏  |  浏览/下载：43/0  |  提交时间：2019/11/11 two-dimensional  semiconductor  band structure  ferromagnetism  water splitting   Two-dimensional wide-band-gap ii–v semiconductors with a dilated graphene-like structure 期刊论文  iSwitch采集 Semiconductor science and technology, 2016, 卷号: 31, 期号: 12 作者:  Zhang,Xue-Jing;  Liu,Bang-Gui 收藏  |  浏览/下载：53/0  |  提交时间：2019/05/09 Two-dimensional semiconductor  Wide band gap  First-principles calculation  68.65.-k  73.22.-f  78.67.-n   Effect of ka-band microwave on the spin dynamics of electrons in a gaas/al0.35ga0.65as heterostructure 期刊论文  iSwitch采集 Applied physics letters, 2009, 卷号: 94, 期号: 19, 页码: 3 作者:  Luo, Haihui 收藏  |  浏览/下载：33/0  |  提交时间：2019/05/12 Aluminium compounds  Carrier lifetime  Gallium arsenide  High-frequency effects  Iii-v semiconductors  Optical kerr effect  Semiconductor heterojunctions  Spin dynamics  Two-dimensional electron gas   Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure 期刊论文  OAI收割 applied physics letters, 2009, 卷号: 94, 期号: 19, 页码: art. no. 192107 作者:  Qian X 收藏  |  浏览/下载：97/7  |  提交时间：2010/03/08 aluminium compounds  carrier lifetime  gallium arsenide  high-frequency effects  III-V semiconductors  optical Kerr effect  semiconductor heterojunctions  spin dynamics  two-dimensional electron gas   Tuning of plasmon propagation in two-dimensional electrons 期刊论文  iSwitch采集 Applied physics letters, 2008, 卷号: 93, 期号: 25, 页码: 3 作者:  Li, Chao;  Wu, X. G. 收藏  |  浏览/下载：27/0  |  提交时间：2019/05/12 Field effect transistors  Plasmons  Semiconductor heterojunctions  Spin-orbit interactions  Two-dimensional electron gas   Dislocation scattering in alxga1-xn/gan heterostructures 期刊论文  iSwitch采集 Applied physics letters, 2008, 卷号: 93, 期号: 18, 页码: 3 作者:  Xu, Xiaoqing;  Liu, Xianglin;  Han, Xiuxun;  Yuan, Hairong 收藏  |  浏览/下载：39/0  |  提交时间：2019/05/12 Aluminium compounds  Dislocation density  Electron mobility  Gallium compounds  Iii-v semiconductors  Interface roughness  Semiconductor heterojunctions  Two-dimensional electron gas  Wide band gap semiconductors