中国科学院机构知识库网格系统: 检索

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	Growth of high quality Ge epitaxial films on Si substrate by low temperature buffer technique 期刊论文 OAI收割 guangdianzi jiguang/journal of optoelectronics laser, 2011, 卷号: 22, 期号: 7, 页码: 1030-1033 Zhou, Zhi-Wen; He, Jing-Kai; Li, Cheng; Yu, Jin-Zhong 收藏 \| 浏览/下载：55/0 \| 提交时间：2012/06/13 Atomic force microscopy Atomic spectroscopy Chemical vapor deposition Diffraction Epitaxial growth Germanium Raman spectroscopy Semiconducting silicon compounds Substrates Surface morphology Ultrahigh vacuum X ray diffraction
	High-saturation-power and high-speed ge-on-soi p-i-n photodetectors 期刊论文 iSwitch采集 Ieee electron device letters, 2010, 卷号: 31, 期号: 7, 页码: 701-703 作者: Xue, Hai-Yun; Xue, Chun-Lai; Cheng, Bu-Wen; Yu, Yu-De; Wang, Qi-Ming 收藏 \| 浏览/下载：34/0 \| 提交时间：2019/05/12 Germanium Photodetectors Saturation power Silicon-on-insulator (soi) technology Ultrahigh-vacuum chemical vapor deposition (uhv/cvd)
	High-Saturation-Power and High-Speed Ge-on-SOI p-i-n Photodetectors 期刊论文 OAI收割 ieee electron device letters, 2010, 卷号: 31, 期号: 7, 页码: 701-703 Xue HY (Xue Hai-Yun); Xue CL (Xue Chun-Lai); Cheng BW (Cheng Bu-Wen); Yu YD (Yu Yu-De); Wang QM (Wang Qi-Ming) 收藏 \| 浏览/下载：54/0 \| 提交时间：2010/11/01 Germanium photodetectors saturation power silicon-on-insulator (SOI) technology ultrahigh-vacuum chemical vapor deposition (UHV/CVD)
	In situ annealing during the growth of relaxed SiGe 会议论文 OAI收割 conference on optical and infrared thin films, san diego, ca, 36739 Li DZ; Huang CJ; Cheng BW; Wang HJ; Yu Z; Zhang CH; Yu JZ; Wang QM 收藏 \| 浏览/下载：24/0 \| 提交时间：2010/10/29 Ultrahigh Vacuum Chemical Vapor Deposition SiGe Refractive High Energy Electron Diffraction tansmission electron microscopy Double Crystal X-Ray Diffraction MOBILITY 2-DIMENSIONAL ELECTRON CRITICAL THICKNESS STRAINED LAYERS GE RELAXATION EPILAYERS SI1-XGEX GESI/SI GASES