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	Material research on the InGaAs-emitting-layer VECSEL grown on GaAs substrate 期刊论文 OAI收割 materials science in semiconductor processing, 2016, 卷号: 42, 页码: 283-287 作者: Lin, Tao; Sun, Ruijuan; Sun, Hang; Guo, Enmin; Duan, Yupeng 收藏 \| 浏览/下载：26/0 \| 提交时间：2016/01/11 VECSEL MOVPE InGaAs
	Structural amelioration of 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) (EI CONFERENCE) 会议论文 OAI收割 2nd International Conference on Energy, Environment and Sustainable Development, EESD 2012, October 12, 2012 - October 14, 2012, Jilin, China 作者: Liu Y.; Liu Y.; Wang L.; Wang L.; Wang L. 收藏 \| 浏览/下载：18/0 \| 提交时间：2013/03/25 920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) has an important application in laser display. We constructed and optimized a 920 nm OPS-VECSEL with active region of In0.09Ga0.91As quantum well (QW) system pumped by 808 nm laser diode module. By the finite element method self-consistent solutions of the semiconductor electronic and optical equations are realized to calculate the characteristics parameters of OPS-VECSEL. The performances of device especially the mode the threshold and the optical-optical translation efficiency were analyzed by dealing with different number of QWs (1 2 and 3) in one period QW depth barrier width the component and dimension of the non-absorption layer. We chose an improved structure of them. On this basis we ameliorated the number of QW periods and the simulation showed that in order to obtain high performance device the choice of the number of QW periods must be cautious. (2013) Trans Tech Publications Switzerland.
	High power diode pumped Vertical External-cavity Surface-emitting Lasers (VECSELS) (EI CONFERENCE) 会议论文 OAI收割 IRMMW-THz 2006 - 31st International Conference on Infrared and Millimeter Waves and 14th International Conference on Terahertz Electronics, September 18, 2006 - September 22, 2006, Shanghai, China 作者: Qin L. 收藏 \| 浏览/下载：16/0 \| 提交时间：2013/03/25 We describe the theoretical analysis and calculations of the 980nm high-power diode-pumped vertical external cavity surface emitting laser (VECSEL). The VECSEL with active region of InGaAs/GaAsP/AlGaAs system can be operated near 500mw in a single transverse mode. 2006 IEEE.
	980nm high power Vertical External-cavity Surface-emitting Semiconductor Lasers (VECSEL) (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China 作者: Ning Y.-Q.; Wang L.-J.; Wang L.-J.; Qin L. 收藏 \| 浏览/下载：14/0 \| 提交时间：2013/03/25 We describe the design fabrication and calculation characteristics of the 980nm high-power diode-pumped vertical external-cavity surface-emitting laser(VECSEL).From our calculation the VECSEL with active region of InGaAs/GaAsP/AlGaAs system can operate near 1w in a single transverse mode.
	Vertical-external-cavity surface-emitting lasers operating at different wavelength: Design, numerical simulation, and characteristics (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China 作者: Qin L.; Jiang H.; Wang L.; Wang L.; Wang L. 收藏 \| 浏览/下载：19/0 \| 提交时间：2013/03/25 We describe design numerical simulation and characteristics of high-power optical pumped VECSELs at different wavelength (980nm and 1300nm). The device design realizes the integrating diode-pumped lasers with vertical-cavity surface-emitting laser structure drawing on the advantages of both. With periodical gain element structure optical pumped VECSEL is scalable to watt level output. The characteristics such as threshold condition and output power are calculated theoretically. An optimum number of quantum wells and external mirror reflectivity are obtained from the calculation results and the thermal characteristic is also considered. Finally the calculation results also predict high output power in this kind of device structure.
	Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文 OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者: Wang L.-J.; Wang L.-J.; Ning Y.-Q.; Qin L. 收藏 \| 浏览/下载：22/0 \| 提交时间：2013/03/25 By using bottom-emitting structure we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron heavy and light holes. According to the transition selection rule we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells we calculated the gain of VECSEL using transition matrix elements of electron heavy and light holes. We give out the threshold gain output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.