中国科学院机构知识库网格系统: 检索

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	GROWTH OF HIGHLY (0002) ORIENTED InN FILMS ON AlInN/AlN BILAYER 期刊论文 OAI收割 Surface Review and Letters, 2013, 卷号: 20, 期号: 2 C. J. Dong; M. Xu; W. Lu; Q. Z. Huang 收藏 \| 浏览/下载：25/0 \| 提交时间：2013/12/24 Thin films nitrides sputtering microstructure chemical-vapor-deposition molecular-beam epitaxy optical-properties lattice-constants phase epitaxy wurtzite inn thin-films layers spectroscopy nitridation
	Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy 期刊论文 OAI收割 nanoscale research letters, 2010, 卷号: 5, 期号: 8, 页码: 1340-1343 Liu JM (Liu J. M.); Liu XL (Liu X. L.); Xu XQ (Xu X. Q.); Wang J (Wang J.); Li CM (Li C. M.); Wei HY (Wei H. Y.); Yang SY (Yang S. Y.); Zhu QS (Zhu Q. S.); Fan YM (Fan Y. M.); Zhang XW (Zhang X. W.); Wang ZG (Wang Z. G.) 收藏 \| 浏览/下载：157/21 \| 提交时间：2010/08/17 Valence band offset w-InN/h-BN heterojunction X-ray photoelectron spectroscopy Conduction band offset Valence band offset NEGATIVE ELECTRON-AFFINITY INDIUM NITRIDE WURTZITE GAN SURFACE FILM ALN TRANSPORT EMISSION NAXWO3 GROWTH
	Electronic and Optical Properties of Rock-Salt AlN under High Pressure via First-Principles Analysis 期刊论文 OAI收割 Communications in Theoretical Physics, 2008, 卷号: 50, 期号: 4, 页码: 990-994 W. Zhang; X. R. Chen; L. C. Cai; Q. Q. Gou 收藏 \| 浏览/下载：27/0 \| 提交时间：2012/04/13 semiconductors electronic band structure optical properties density functional theory aluminum nitride wurtzite zincblende gan films inn
	Research on the band-gap of InN grown on siticon substrates 会议论文 OAI收割 32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005 Xiao, HL; Wang, XL; Wang, JX; Zhang, NH; Liu, HX; Zeng, YP; Li, JM 收藏 \| 浏览/下载：113/15 \| 提交时间：2010/03/29 MOLECULAR-BEAM EPITAXY WURTZITE INN NITRIDE ABSORPTION ALLOYS FILMS