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Chinese Academy of Sciences Institutional Repositories Grid
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期刊论文 [7]
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First-principle calculations of elastic properties of Wurtzite-type aluminum nitride under pressure
期刊论文
OAI收割
Communications in Theoretical Physics, 2008, 卷号: 49, 期号: 2, 页码: 489-492
Y. L. Wang
;
H. L. Cui
;
B. R. Yu
;
X. R. Chen
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  |  
浏览/下载:28/0
  |  
提交时间:2012/04/13
density functional theory
elastic properties
w-AlN
rock-salt-type
thermodynamic properties
electronic-structure
aln
constants
crystals
zincblende
inn
gan
instabilities
Electronic and Optical Properties of Rock-Salt AlN under High Pressure via First-Principles Analysis
期刊论文
OAI收割
Communications in Theoretical Physics, 2008, 卷号: 50, 期号: 4, 页码: 990-994
W. Zhang
;
X. R. Chen
;
L. C. Cai
;
Q. Q. Gou
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2012/04/13
semiconductors
electronic band structure
optical properties
density
functional theory
aluminum nitride
wurtzite
zincblende
gan
films
inn
Elastic and thermodynamic properties of c-BN from first-principles calculations
期刊论文
OAI收割
Chinese Physics, 2007, 卷号: 16, 期号: 1, 页码: 217-222
Y. J. Hao
;
Y. Cheng
;
Y. J. Wang
;
X. R. Chen
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2012/04/13
elastic constants
thermodynamic properties
local density
approximation
c-BN
cubic boron-nitride
superconducting mgb2
zincblende bn
constants
phase
aln
gan
transition
pressure
inn
First-principles calculations of elastic constants of c-BN
期刊论文
OAI收割
Physica B-Condensed Matter, 2006, 卷号: 382, 期号: 1-2, 页码: 118-122
Y. J. Hao
;
X. R. Chen
;
H. L. Cui
;
Y. L. Bai
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2012/04/13
elastic constants
local density approximation
Debye temperature
thermal expansion coefficients
c-BN
cubic boron-nitride
molecular-dynamics simulation
thermodynamic
properties
structural-properties
superconducting mgb2
thermal-expansion
zincblende bn
gan
aln
phase
Linear and nonlinear electron transport in modulation-doped AlGaN/GaN heterostructures
期刊论文
OAI收割
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 卷号: 43, 期号: 1, 页码: 50-53
Cao, JC
;
Yao, W
收藏
  |  
浏览/下载:85/0
  |  
提交时间:2011/12/17
MONTE-CARLO CALCULATION
WURTZITE GAN
IMPACT IONIZATION
BULK ZINCBLENDE
GALLIUM NITRIDE
Growth and Si-doping of GaN on GaAs(001) by MBE
期刊论文
OAI收割
FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 2000, 卷号: 4086, 页码: 306
Huang, Q
;
Chen, H
;
Li, ZQ
;
Liu, HF
;
Zhou, JM
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2013/09/17
CHEMICAL-VAPOR-DEPOSITION
MOLECULAR-BEAM EPITAXY
DOPED GAN
POTENTIAL FLUCTUATION
CUBIC-GAN
ZINCBLENDE
MOCVD growth of cubic GaN: Materials and devices
会议论文
OAI收割
international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000
作者:
Zhao DG
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  |  
浏览/下载:21/0
  |  
提交时间:2010/10/29
MOCVD
GaN
InGaN
cubic
LED
CHEMICAL-VAPOR-DEPOSITION
MOLECULAR-BEAM EPITAXY
GALLIUM NITRIDE
PHASE EPITAXY
INGAN FILMS
ELECTROLUMINESCENCE
ZINCBLENDE
WURTZITE
MBE
Valence hole subbands and optical gain spectra of GaN/Ga1-xAlxN strained quantum wells
期刊论文
OAI收割
journal of applied physics, 1996, 卷号: 80, 期号: 6, 页码: 3471-3478
Fan WJ
;
Li MF
;
Chong TC
;
Xia JB
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2010/11/17
GALLIUM NITRIDE
ELECTRONIC-STRUCTURES
SEMICONDUCTOR-LASERS
ZINCBLENDE GAN
PRESSURE
PHOTOLUMINESCENCE
SUPERLATTICES
SUPPRESSION
RESONANCE
ALLOYS