中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共8条,第1-8条 帮助

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First-principle calculations of elastic properties of Wurtzite-type aluminum nitride under pressure 期刊论文  OAI收割
Communications in Theoretical Physics, 2008, 卷号: 49, 期号: 2, 页码: 489-492
Y. L. Wang; H. L. Cui; B. R. Yu; X. R. Chen
收藏  |  浏览/下载:28/0  |  提交时间:2012/04/13
Electronic and Optical Properties of Rock-Salt AlN under High Pressure via First-Principles Analysis 期刊论文  OAI收割
Communications in Theoretical Physics, 2008, 卷号: 50, 期号: 4, 页码: 990-994
W. Zhang; X. R. Chen; L. C. Cai; Q. Q. Gou
收藏  |  浏览/下载:27/0  |  提交时间:2012/04/13
Elastic and thermodynamic properties of c-BN from first-principles calculations 期刊论文  OAI收割
Chinese Physics, 2007, 卷号: 16, 期号: 1, 页码: 217-222
Y. J. Hao; Y. Cheng; Y. J. Wang; X. R. Chen
收藏  |  浏览/下载:23/0  |  提交时间:2012/04/13
First-principles calculations of elastic constants of c-BN 期刊论文  OAI收割
Physica B-Condensed Matter, 2006, 卷号: 382, 期号: 1-2, 页码: 118-122
Y. J. Hao; X. R. Chen; H. L. Cui; Y. L. Bai
收藏  |  浏览/下载:25/0  |  提交时间:2012/04/13
Linear and nonlinear electron transport in modulation-doped AlGaN/GaN heterostructures 期刊论文  OAI收割
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 卷号: 43, 期号: 1, 页码: 50-53
Cao, JC; Yao, W
收藏  |  浏览/下载:85/0  |  提交时间:2011/12/17
Growth and Si-doping of GaN on GaAs(001) by MBE 期刊论文  OAI收割
FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 2000, 卷号: 4086, 页码: 306
Huang, Q; Chen, H; Li, ZQ; Liu, HF; Zhou, JM
收藏  |  浏览/下载:21/0  |  提交时间:2013/09/17
MOCVD growth of cubic GaN: Materials and devices 会议论文  OAI收割
international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000
作者:  
Zhao DG
收藏  |  浏览/下载:21/0  |  提交时间:2010/10/29
Valence hole subbands and optical gain spectra of GaN/Ga1-xAlxN strained quantum wells 期刊论文  OAI收割
journal of applied physics, 1996, 卷号: 80, 期号: 6, 页码: 3471-3478
Fan WJ; Li MF; Chong TC; Xia JB
收藏  |  浏览/下载:33/0  |  提交时间:2010/11/17