中国科学院机构知识库网格系统: 检索

Argon ion beam assisted magnetron sputtering deposition of boron-doped a-Si:H thin films with improved conductivity 期刊论文 OAI收割
Journal of Non-Crystalline Solids, 2013, 卷号: 378, 页码: 177-180
作者: Wang LQ(王凌倩); Wang, Weiyan; Huang, Junjun; Zeng, Yuheng; Tan, Ruiqin

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Argon ion beam assisted magnetron sputtering Boron-doped a-Si:H thin film Dark conductivity

Tribological properties of Mos2 thin coatings under liquid lubricating (EI CONFERENCE) 会议论文 OAI收割
2nd International Conference on Innovation Manufacturing and Engineering Management, IMEM 2012, December 14, 2012 - December 16, 2012, Chongqing, China
Bai Y.; Cao P.

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The objective of this study is to investigate the effect of solid and liquid lubrication on friction and wear performance of selected solid lubricating coatings comparative experiments have been carried out on magnetron sputtered MoS2 coatings against Si3N4 ball using a ball-on-disk tribo-tester under the conditions of room temperature and different lubrication. Surface morphology of coatings were investigated by atom force microscope (AFM) and friction coefficient (COF) and wear rate of solid films were also be analyzed. It was shown that the friction is greatly reduced when the solid film is lubricated with oil and grease simultaneously in comparison with single-lubricant lubrication at the start-up or under boundary lubrication conditions. Liquid lubrication causes a dramatic decrease of the wear-ability of the MoS2 coatings. The effect of oil lubrication to the deterioration of wear resistance of MoS2 film was even worse than lubrication grease. (2013) Trans Tech Publications Switzerland.

Surface modification of SiC mirror by IARE method (EI CONFERENCE) 会议论文 OAI收割
7th International Conference on Thin Film Physics and Applications, September 24, 2010 - September 27, 2010, Shanghai, China
作者: Gao J.

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A method to prepare high quality SiC coating at low temperature using large aperture E-beam evaporation PVD equipment with ion assistance was developed for the surface modification of SiC mirror for space projects. This method was called Ion Assisted Reactive Evaporation (IARE). The modified SiC coating was prepared using CH4 and Si with Kaufman ion source by IARE at 300C and it had met the requirements of applications. The SiC coating prepared by this method was amorphous. It was dense homogeneous and easy to be polished. The surface modification of a SiC mirror was carried out using SiC coating by this method and achieved a fine surface modification effect. The surface roughness (rms) of the SiC substrate was reduced to 0.862nm the scattering coefficient was reduced to 2.79% and the reflectance coated with Ag film was improved simultaneously after the surface modification. The effect of surface modification using SiC coating was close to that of using Si coating. It can be drawn that this technological method to preparation SiC coating for the surface modification of SiC mirror is reasonable and effective. 2011 SPIE.

The novel facet coating technology for 808nm semiconductor laser (EI CONFERENCE) 会议论文 OAI收割
2010 Academic Symposium on Optoelectronics and Microelectronics Technology and 10th Chinese-Russian Symposium on Laser Physics and Laser Technology, RCSLPLT/ASOT 2010, July 28, 2010 - August 1, 2010, Harbin, China
作者: Liu Y.; Qin L.; Li Z.; Li Z.; Wang L.

收藏 | 浏览/下载：21/0 | 提交时间：2013/03/25

A novel facet coating technology is presented by studying catastrophic optical mirror damage mechanism of semiconductor laser. In this technology semiconductor laser are cleaved in the air and the surface oxide layer is removed with a low energy ion source flowed immediately by coating the facet with thin ZnSe layer of 20 nm. The function of this layer is to protect semiconductor laser facet and prevent impurity particles diffusing to the facet. Finally the facet is coated with oxidative optical film. The test results show that the output power of the semiconductor laser with the ZnSe coated layer is 13% higher than that of the Si coated layer and 47% higher than that of the oxide coated film. The device coated oxide film is damaged when current is 4.5 A and the device coated with Si layer is damaged when current is 5.5 A the final failed device is coated with ZnSe layer. In conclusion the method of coating ZnSe layer on the semiconductor laser facet can prevent effectively the catastrophic optical mirror damage and increase the output power of semiconductor lasers. 2010 IEEE.

Superlow friction behavior of si-doped hydrogenated amorphous carbon film in water environment 期刊论文 iSwitch采集
Surface & coatings technology, 2009, 卷号: 203, 期号: 8, 页码: 981-985
作者: Zhao, F.; Li, H. X.; Ji, L.; Mo, Y. F.; Quan, W. L.

收藏 | 浏览/下载：44/0 | 提交时间：2019/05/10

A-c:h:si film Superlow friction coefficient Water environment Tribochemical reaction

IAD-Si coatings on RB-SiC space mirrors for ultra-smooth surfaces (EI CONFERENCE) 会议论文 OAI收割
4th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, November 19, 2008 - November 21, 2008, Chengdu, China
作者: Xu L.; Wang X.; Wang X.; Wang X.; Zhang F.

收藏 | 浏览/下载：25/0 | 提交时间：2013/03/25

To eliminate surface limitation caused by Silicon impurity in RB-SiC space mirrors a relatively thick Si film is deposited on well finished RB-SiC substrate by a new process-ion assisted depositing (IAD) to provide a better polishable surface. Testing results of IAD-Si properties are provided showing that the amorphous film has great thermal shock resistance. Then polishing experiments on 100.5m thick IAD-Si layers are accomplished focusing on smoother surface. Surface figure and micro-roughness of the coating after polished reach 0.026 RMS (=0.6328nm) and less than 0.5nm RMS respectively. Moreover reflectivity of IAD-Si polished surface with reflective films increases higher than 4.5% than that of RB-SiC in 360-1100nm. High reflectivity and desirable thermal property make IAD-Si an attractive coating material for RB-SiC space mirrors. 2009 SPIE.

Manufacturing and testing of the line-array fiber-optic image slicer based on silicon V-grooves (EI CONFERENCE) 会议论文 OAI收割
MEMS/MOEMS Technologies and Applications III, November 12, 2007 - November 14, 2007, Beijing, China
作者: Zhu Y.

收藏 | 浏览/下载：23/0 | 提交时间：2013/03/25

Linear fiber-optic image slicer is used more and more in spatial exploration and imaging system. In this paper a plane arranging method of fiber-optic array based on Si-V grooves is established in order to improve the accuracy and reduce the cost of manufacturing. Firstly the Si-V groove array is micro-machined with anisotropic etching process then optical fibers are placed in the grooves orderly with plane arranging method. Secondly the end surfaces of the device are polished also the linear fiber-optic image slicer is packaged. Finally some parameters are tested including structure parameters transmittivity and vibration test. Experimental results indicate that the maximum error accumulated in 2000 periods of the Si-V grooves is 0.5 m the error of the height in Si-V grooves is less than 0.15m the roughness of the end surface is less than 0.9nm. The transmittivity of the linear fiber-optic image slicer that without optical film is 51.46% at the wavelength of 632.8nm. After random vibration experiment the ratio of the broken fiber increased by 0.1%. While the temperature reached 320C the stress of epoxy will be 130Mpa which is close to the limit resistance stress of 139Mpa some cracks appeared.

The fabrication and study of ZnO-based thin film transistors (EI CONFERENCE) 会议论文 OAI收割
Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China
作者: Wang C.

收藏 | 浏览/下载：23/0 | 提交时间：2013/03/25

Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO-TF-TS) have been constructed. The ZnO layers were deposited using metal organic chemical vapor deposition (MOCVD)[1-3] at about 360C. SiO2 was used as the material of gate insulator to suppress the leakage current effectively and to enable the ZnO-TFT to operate successfully. The drain current on-to-off ratio of ZnO-TFTs fabricated on the substrate of glass is about 104. The average optical transmission of ZnO-TFTs in the visible portion is 80%. All above shows that it is possible to fabricate a transparent TFT using ZnO as an active channel layer instead of the traditional Si material.

Fabrication of polysilicon thin film on glass with low-temperature UV-assisted crystallization (EI CONFERENCE) 会议论文 OAI收割
ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China
Huang J. Y.; Ling Z. H.; Jing H.; Fu G. Z.; Zhao Y. H.

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The amorphous silicon (a-Si) film was crystallized on glass by a simple method employed ultraviolet at temperatures as low as 400C. The employ of ultraviolet enhanced the crystallization of amorphous silicon. This method is able to uniformly crystallized large-area amorphous silicon films. The polysilicon films crystallized by this way are suitable for the fabrication of thin film transistors on ordinary glass. Crystallization process is performed in a furnace. Amorphous silicon sample is placed on a hot plate and irradiated by a bank of ultraviolet lamps through a diffuser plate to improve the uniformity of light that irradiates the sample. Raman microscopy is used for analyzing the qualities of UV-assisted crystallized silicon films. By measuring the Raman spectra the effects of anneal temperature and process time on the crystallizing behavior crystallinity and grain size of the processed films were obtained. There has a threshold temperature for crystallization of amorphous silicon film in the presence of ultraviolet irradiation with certain intensity i.e. by ultraviolet irradiation with certain intensity only when the temperature is up to the threshold temperature the crystallization can be triggered. The threshold temperature is 400C when the intensity of ultraviolet irradiation is 1mW/cm2. Above threshold temperature the increase of anneal temperature increased the rate of crystallization. Crystallinity and grain size extracted from Raman spectra of samples increase with the extending of process time at certain temperature. Crystallization of amorphous silicon film with thickness of 50nm completed within 6 hours at 400C irradiated by ultraviolet with intensity of 2mW/cm2.

Design of an improved data signal timing for an amorphous silicon active-matrix organic LED display (EI CONFERENCE) 会议论文 OAI收割
ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China
作者: Zhang Z.-W.

收藏 | 浏览/下载：19/0 | 提交时间：2013/03/25

The most critical issue in the design of an active matrix organic light emitting diode (AM-OLED) display pixel is the pixel to the pixel luminance uniformity. By substituting four-thin film transistor (TFT) pixel circuit for two-TFT pixel circuit the luminous uniformity has great improved but it requires more components than the two-TFT pixel circuit. There are some barriers needed to resolve to utilize hydrogenated amorphous silicon transistor to lit OLED such as low field effect mobility low output current and threshold voltage shift. In this article a two-a-Si:H TFT pixel circuit was designed which consisted of one named switching TFT and the other named driving TFT. The driving TFT gate line structure modified and a data signal timing improved were reported. The modified driving TFT can provide enough current about 30 microampere to lit OLED and the novel data signal timing can provide a constant current to OLED by restraining the driving TFT threshold voltage variation. In the novel data signal timing the control signals to the driving TFT gate include a data signal and a reverse data signal. The signals alteration is performed either at a frame rate or at a line rate. By experiments the driving TFT output current value is plotted as a function of the time in different reversed voltage value. When the magnitude of the positive data signal and the negative data signal is equal the variety of Vth is smallest about 1.28V after a fixed stressing time of 1.33104min which shows the novel data signal timing can improved the driving TFT output-input current stability.