中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共12条,第1-10条 帮助

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Fabrication of PbS QDs/Graphene Heterostructure Photoelectrochemical Cell by Electrochemical Atomic Layer Epitaxy Method 期刊论文  OAI收割
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2019, 卷号: 19, 期号: 1, 页码: 235-239
作者:  
Huang, Ao;  Li, Jingze;  Wang, Yuehui;  Feng, Shuanglong
  |  收藏  |  浏览/下载:63/0  |  提交时间:2018/11/12
AlGaN photonics_recent advances in materials and ultraviolet devices 期刊论文  OAI收割
Advances in Optics and Photonics, 2018, 卷号: 10, 期号: 1, 页码: 43-110
作者:  
Li, D. B.;  Jiang, K.;  Sun, X. J.;  Guo, C. L.
  |  收藏  |  浏览/下载:27/0  |  提交时间:2019/09/17
Growth of alpha-axis ZnO films on the defective substrate with different O/Zn ratios: A reactive force field based molecular dynamics study 期刊论文  OAI收割
Journal of Alloys and Compounds, 2015, 卷号: 628, 页码: 317-324
L.; Shahzad Liu, M. B.; Qi, Y.
收藏  |  浏览/下载:36/0  |  提交时间:2015/05/08
The Effect of AlN Nucleation Temperature on the Growth of AlN Films via Metalorganic Chemical Vapor Deposition 期刊论文  OAI收割
JOURNAL OF ELECTRONIC MATERIALS, 2012, 卷号: 41, 期号: 3, 页码: 466-470
Wang, H; Li, SL; Xiong, H; Wu, ZH; Dai, JN; Tian, Y; Fang, YY; Chen, CQ
收藏  |  浏览/下载:52/0  |  提交时间:2013/04/17
Characteristics of high al content algan grown by pulsed atomic layer epitaxy 期刊论文  iSwitch采集
Applied surface science, 2011, 卷号: 257, 期号: 20, 页码: 8718-8721
作者:  
Pan, Xu;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai
收藏  |  浏览/下载:198/0  |  提交时间:2019/05/12
Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy 期刊论文  OAI收割
APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 20, 页码: 8718-8721
作者:  
Pan, Xu;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai
  |  收藏  |  浏览/下载:62/0  |  提交时间:2021/02/02
Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy 期刊论文  OAI收割
APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 20, 页码: 8718-8721
作者:  
Pan, Xu;  Wang, Xiaoliang;  Xiao, Hongling;  Wang, Cuimei;  Yang, Cuibai
  |  收藏  |  浏览/下载:22/0  |  提交时间:2021/02/02
Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy 期刊论文  OAI收割
applied surface science, 2011, 卷号: 257, 期号: 20, 页码: 8718-8721
作者:  
Jin P
收藏  |  浏览/下载:71/4  |  提交时间:2011/07/07
Ultrafast photoelectric effects and high-sensitive photovoltages in perovskite oxides and heterojunctions 期刊论文  OAI收割
FRONTIERS OF PHYSICS IN CHINA, 2010, 卷号: 5, 期号: 2, 页码: 176
Guo, EJ; Lu, HB; Jin, KJ; Yang, GZ
收藏  |  浏览/下载:24/0  |  提交时间:2013/09/23
Highly reliable dc SQUIDs in temperature with laser-MBE YBa2Cu3OX thin films 期刊论文  OAI收割
SOLID STATE COMMUNICATIONS, 2003, 卷号: 126, 期号: 8, 页码: 431
Wang, J; Han, B; Chen, F; Zhao, T; Xu, FZ; Zhou, YL; Chen, GH; Lu, HB; Yang, QS; Cui, TH
收藏  |  浏览/下载:31/0  |  提交时间:2013/09/17