机构

• 半导体研究所 [11]
• 长春光学精密机械与物... [3]
• 物理研究所 [1]
• 金属研究所 [1]
• 地理科学与资源研究所 [1]
• 上海微系统与信息技术... [1]
• 更多

采集方式

• OAI收割 [17]
• iSwitch采集 [3]

内容类型

• 期刊论文 [18]
• 会议论文 [2]

发表日期

• 2024 [1]
• 2018 [1]
• 2016 [1]
• 2015 [1]
• 2011 [2]
• 2010 [1]
• 更多

学科主题

• 半导体物理 [4]
• 光电子学 [2]
• 半导体材料 [2]
• Crystallog... [1]

筛选

浏览/检索结果: 共20条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Derivation and Evaluation of LAI from the ICESat-2 Data over the NEON Sites: The Impact of Segment Size and Beam Type 期刊论文  OAI收割 REMOTE SENSING, 2024, 卷号: 16, 期号: 16, 页码: 3078 作者:  Wang, Yao;  Fang, Hongliang   |  收藏  |  浏览/下载：12/0  |  提交时间：2024/10/21 leaf area index (LAI)  ICESat-2  airborne laser scanning (ALS)  segment size  beam type   Reinventing a p-type doping process for stable ZnO light emitting devices 期刊论文  OAI收割 Journal of Physics D-Applied Physics, 2018, 卷号: 51, 期号: 22, 页码: 4 作者:  Xie, X. H.;  Li, B. H.;  Zhang, Z. Z.;  Shen, D. Z.   |  收藏  |  浏览/下载：20/0  |  提交时间：2019/09/17 zinc oxide  p-type  self-compens-tion  doping  molecular-beam epitaxy  thin-films  room-temperature  mgzno films  diodes  nanoparticles  modulation  gan(0001)  inversion  epilayers  Physics   Transmission-type miniature micro-beam modulated x-ray source based on space application 期刊论文  iSwitch采集 Acta physica sinica, 2016, 卷号: 65, 期号: 14, 页码: 6 作者:  Mou Huan;  Li Bao-Quan;  Cao Yang 收藏  |  浏览/下载：44/0  |  提交时间：2019/05/09 Miniature micro-beam  Transmission-type  Modulated x-ray source   Analysis of the displacement amplification ratio of bridge-type mechanism 期刊论文  OAI收割 Mechanism and Machine Theory, 2015, 卷号: 87, 页码: 45-56 作者:  Qi, Keqi;  Xiang, Yang;  Fang, Chao;  Zhang Y(张阳);  Yu, Changsong 收藏  |  浏览/下载：36/0  |  提交时间：2015/02/04 Bridge-type mechanism  Displacement amplification ratio  Kinematic theory  Elastic beam theory  Finite element method (FEM)   Control of N/N2 species ratio in NO plasma for p-type doping of ZnO (EI CONFERENCE) 会议论文  OAI收割 作者:  Chen X.;  Liu L.;  Liu L.;  Li B.;  Li B. 收藏  |  浏览/下载：21/0  |  提交时间：2013/03/25 Nitrogen-doped ZnO thin films were grown on c-plane sapphire (Al 2O3) substrates via plasma-assisted molecular beam epitaxy using plasma activated nitric oxide (NO) as the oxygen source and dopant. X-ray diffraction measurements indicate that a small NO flux benefits the crystal quality of the thin films. Hall effect measurements indicate that the electron density of the ZnO films decreases gradually with decreasing NO flux  and the conduction reverses to p-type at a certain flux. Optical emission spectra indicate that the N atom content in the NO plasma increases with decreasing NO flux  and the origin of this is discussed. X-ray photoelectron spectroscopy measurements demonstrate that the number of N atom occupied O sites in the ZnO lattice increases correspondingly. 2011 American Institute of Physics.   Tunable p-Type Conductivity and Transport Properties of AlN Nanowires via Mg Doping 期刊论文  OAI收割 Acs Nano, 2011, 卷号: 5, 期号: 5, 页码: 3591-3598 Y. B. Tang; X. H. Bo; J. Xu; Y. L. Cao; Z. H. Chen; H. S. Song; C. P. Liu; T. F. Hung; W. J. Zhang; H. M. Cheng; I. Bello; S. T. Lee; C. S. Lee 收藏  |  浏览/下载：21/0  |  提交时间：2012/04/13 aluminum nitride  nanowire arrays  Mg doping  tunable p-type  conductivity  field-effect transistors  aluminum nitride nanotubes  molecular-beam epitaxy  field-emission  thin-films  growth  gan  arrays  nanostructures  stability  substrate   Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy 期刊论文  OAI收割 applied surface science, 2010, 卷号: 256, 期号: 22, 页码: 6881-6886 Zhao J (Zhao Jie); Zeng YP (Zeng Yiping); Liu C (Liu Chao); Cui LJ (Cui Lijie); Li YB (Li Yanbo) 收藏  |  浏览/下载：170/17  |  提交时间：2010/07/05 ZnTe  Molecular beam epitaxy  Reflection high-energy electron diffraction  X-ray diffraction  Atomic force microscopy  VAPOR-PHASE EPITAXY  N-TYPE ZNTE  MBE GROWTH  100 GAAS  ZNSE  LAYERS  SURFACE  TEMPERATURE  SUBSTRATE  EPILAYERS   Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2 期刊论文  OAI收割 applied physics letters, 2008, 卷号: 93, 期号: 10, 页码: art. no. 102112 Ma, P; Gai, YQ; Wang, JX; Yang, FH; Zeng, YP; Li, JM; Li, JB 收藏  |  浏览/下载：43/0  |  提交时间：2010/03/08 P-TYPE GAN  MOLECULAR-BEAM EPITAXY  AUGMENTED-WAVE METHOD  VAPOR-PHASE EPITAXY  ELECTRICAL-PROPERTIES  OXYGEN  ACTIVATION  SILICON   Optical thin films for high power LD-pumped Nd:YVO4 457nm blue laser (EI CONFERENCE) 会议论文  OAI收割 ICO20: Optical Design and Fabrication, August 21, 2005 - August 26, 2005, Changchun, China Bu Y.; Zheng Q.; Xue Q.; Qian L. 收藏  |  浏览/下载：21/0  |  提交时间：2013/03/25 The expanding field of LD-pumped solid state lasers forms an extraordinary challenge for developing the optical coatings. Optical thin films for LD-pumped Nd:YVO4/LBO blue laser at 457nm was presented in this paper based on lower gain laser line action theory  including spectral beam dividers and doubling antireflecting multilayer coatings. To achieve 914nm laser action and 457nm blue light high output power  the coating specifications of laser resonator was analyzed. The transmittance/reflectance spectrum request was effectively separated by adopting high tuned radio stack  simultaneously the spectrum request was reasonably distributed on the two resonator facet reflectivity for restrain the other laser lines such as1064nm and1342nm. The dielectric high reflective laser mirror and antireflecting coatings for 457nm laser were manufactured by double ion beam sputtering technique  which is controlled by a time-power monitoring. Using type-I critical phase-matching LBO crystal  457nm blue laser is obtained by 914nm intracavity frequency doubling. The maximum laser output power of 1.5W is obtained when incident pump laser of 15W is used.   Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts 期刊论文  OAI收割 applied physics letters, 2006, 卷号: 89, 期号: 3, 页码: art.no.033503 Wang RX (Wang R. X.); Xu SJ (Xu S. J.); Djurisic AB (Djurisic A. B.); Beling CD (Beling C. D.); Cheung CK (Cheung C. K.); Cheung CH (Cheung C. H.); Fung S (Fung S.); Zhao DG (Zhao D. G.); Yang H (Yang H.); Tao XM (Tao X. M.) 收藏  |  浏览/下载：37/0  |  提交时间：2010/04/11 MOLECULAR-BEAM EPITAXY  N-TYPE GAN  ELECTRICAL-PROPERTIES  BIAS LEAKAGE  DIODES  OXYGEN