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浏览/检索结果: 共10条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Charge trapping effect in HfO2-based high-k gate dielectric stacks after heavy ion irradiation: The role of oxygen vacancy 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 卷号: 459, 页码: 143-147 作者:  Li, Zongzhen;  Liu, Tianqi;  Bi, Jinshun;  Yao, Huijun;  Zhang, Zhenxing   |  收藏  |  浏览/下载：27/0  |  提交时间：2022/01/19 High-k HfO2  Heavy ion irradiation  Reliability  Charge trapping  Oxygen vacancy   Bi quantum dots on rutile TiO2 as hole trapping centers for efficient photocatalytic bromate reduction under visible light illumination 期刊论文  OAI收割 ELSEVIER SCIENCE BV, 2017, 卷号: 218, 页码: 111-118 作者:  Xiao, Jun;  Yang, Weiyi;  Li, Qi;  Li, Q (reprint author), Chinese Acad Sci, Inst Met Res, Environm Funct Mat Div, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China.   |  收藏  |  浏览/下载：21/0  |  提交时间：2018/01/10 Bi Quantum Dots  Photocatalytic Bromate Reduction  Visible Light  Hole Trapping/consumption Center  Charge Carrier Separation   Semi-closed tubular light-trapping geometry dye sensitized solar cells with stable efficiency in wide light intensity range 期刊论文  OAI收割 JOURNAL OF POWER SOURCES, 2014, 卷号: 261, 页码: 75-85 作者:     |  收藏  |  浏览/下载：30/0  |  提交时间：2019/04/09 Dye Sensitized Solar Cell  Tube Structure  Light-trapping  Light Intensity  Charge Transport  Heat Dissipation   A review of nanographene: growth and applications 期刊论文  OAI收割 MODERN PHYSICS LETTERS B, 2014, 卷号: 28, 期号: 20 Meng, JL; Shi, DX; Zhang, GY 收藏  |  浏览/下载：38/0  |  提交时间：2015/04/14 Nanographene direct growth  strain sensor  resistance random access memory  charge trapping memory   Charge-trapping effect of doped fluorescent dye on the electroluminescent processes and its performance in polymer light-emitting diodes 期刊论文  OAI收割 MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2010, 卷号: 175, 期号: 1, 页码: 75-80 作者:  Ye, Tengling;  Chen, Zhenyu;  Chen, Jiangshan;  Ma, Dongge   |  收藏  |  浏览/下载：58/0  |  提交时间：2019/04/09 Charge-trapping  Energy Transfer  Light-emitting Diodes   Study on the pre-chopper in CSNS LEBT 期刊论文  OAI收割 CHINESE PHYSICS C, 2010, 卷号: 34, 期号: 8, 页码: 1122-1126 作者:  欧阳华甫;  Zhang HS(张华顺);  Gong KY(巩克云);  Liu HC(刘华昌);  Wu XB(吴小兵) 收藏  |  浏览/下载：36/0  |  提交时间：2016/06/29 LEBT  pre-chopper  charge neutralization  deflecting voltage  electron-trapping  loaded capacitance   Study on the pre-chopper in CSNS LEBT 期刊论文  OAI收割 中国物理C, 中国物理C, 2010, 2010, 期号: 8, 页码: 1122-1126, 1122-1126 作者:  欧阳华甫;  Zhang HS(张华顺);  Gong KY(巩克云);  Liu HC(刘华昌);  Wu XB(吴小兵)   |  收藏  |  浏览/下载：32/0  |  提交时间：2015/12/14 LEBT  pre-chopper  charge neutralization  deflecting voltage  electron-trapping  loaded capacitance  LEBT  pre-chopper  charge neutralization  deflecting voltage  electron-trapping  loaded capacitance   The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT (EI CONFERENCE) 会议论文  OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China Liu J. e.; Gao W.; Liao Y.; Jing H.; Fu G. 收藏  |  浏览/下载：24/0  |  提交时间：2013/03/25 The threshold voltage of a-Si: H/SiNx TFT will shift under long time gate bias stress  it is mostly leaded by charge trapping in gate insulator and defect creation in semiconductor. And it is hard to be applied in AMOLED for TFT because of its threshold voltage shift. In allusion to the phenomenon of charge trapping  a series of SiNx insulating films in different N/Si(0. 87 -1.68) ratio were deposited by PECVD in this paper  controlling different flow ratio of source gas SiH4 and NH3  and a great deal of tests (ellipsometer  infrared absorption (FTIR) and Electron Dispersion Spectrum (EDS) test ) were done on these samples. Based on these SiNx insulators  three different capacitance samples in MIS structure were done  degraded experiments and C-V tests on these samples were done. The C-V curve shift of capacitance which contained SiNx with slightly N-rich(N/Si is bigger slightly than 1. 33) was not evident before and after degradation  this result indicated that the defect density of this type SiN x was smaller  and could restrain charge chapping in the interface of a-Si:H/SiNx effectively. So that as gate insulator of TFT  SiN x with slightly N-rich could decrease the threshold voltage shift of TFT and enhance its stability effectively.   Study on the instability of organic field-effect transistors based on fluorinated copper phthalocyanine 期刊论文  OAI收割 thin solid films, 2004, 卷号: 450, 期号: 2, 页码: 316-319 Yuan JF; Zhang JD; Wang J; Yan DH; Xu W 收藏  |  浏览/下载：153/31  |  提交时间：2010/08/17 THIN-FILM TRANSISTORS  CHARGE TRAPPING INSTABILITIES  TRANSPORT   Influence of fluorine on radiation-induced charge trapping in the SIMOX buried oxides 会议论文  OAI收割 7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004 Zhang, GQ; Liu, ZL; Li, N; Zhen, ZS; Liu, GH; Lin, Q; Zhang, ZX; Lin, CL 收藏  |  浏览/下载：149/31  |  提交时间：2010/03/29 fluorine  SIMOX  charge trapping  radiation  SIO2