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期刊论文 [41]
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Multi-layered all-dielectric grating visible color filter with a narrow band and high-quality factor
期刊论文
OAI收割
Optics Express, 2022, 卷号: 30, 期号: 13, 页码: 22820-22829
作者:
Y. H. Zhao
;
Z. Z. Li
;
X. Y. Liu
;
K. Wang
;
Y. Q. Sun
  |  
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2023/06/14
Effects of yttrium on wettability and interactions between molten superalloy and SiO2-based ceramic core
期刊论文
OAI收割
CERAMICS INTERNATIONAL, 2020, 卷号: 46, 期号: 6, 页码: 7324-7335
作者:
Zi, Yun
;
Meng, Jie
;
Zou, Mingke
;
Xu, Wei
;
Li, Jinguo
  |  
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2021/02/02
Molten superalloy
SiO2-based ceramic core
High-temperature wettability
Interface reaction
Yttrium
Oxidation mechanism and kinetics of SiBCN/HfC ceramic composites at high temperatures
期刊论文
OAI收割
JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T, 2020, 期号: 2, 页码: 2289
作者:
Wei, YQ
;
Yang, Y
;
Liu, M
;
Li, QL
  |  
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2020/12/23
Charge trapping effect in HfO2-based high-k gate dielectric stacks after heavy ion irradiation: The role of oxygen vacancy
期刊论文
OAI收割
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 卷号: 459, 页码: 143-147
作者:
Li, Zongzhen
;
Liu, Tianqi
;
Bi, Jinshun
;
Yao, Huijun
;
Zhang, Zhenxing
  |  
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2022/01/19
High-k HfO2
Heavy ion irradiation
Reliability
Charge trapping
Oxygen vacancy
Annealing-induced evolution in interface stability and electrical performance of sputtering-driven rare-earth-based gate oxides
期刊论文
OAI收割
JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 778, 期号: 无, 页码: 579-587
作者:
Wang, Die
;
He, Gang
;
Liang, Shuang
;
Liu, Mao
  |  
收藏
  |  
浏览/下载:63/0
  |  
提交时间:2020/03/31
Dy2O3 gate dielectrics
High-k
Annealing temperature
Optical properties
Electrical characteristics
Performance Enhancement for Charge Trapping Memory by Using Al2O3/HfO2/Al2O3 Tri-Layer High-k Dielectrics and High Work Function Metal Gate
期刊论文
OAI收割
ECS Journal of Solid State Science and Technology, 2018
作者:
Hou CZ(侯朝昭)
  |  
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2019/05/05
Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD-Derived Al2O3 Passivation Layer and Forming Gas Annealing
期刊论文
OAI收割
ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 期号: 4, 页码: 9
作者:
Jiang, Shanshan
;
He, Gang
;
Liu, Mao
;
Zhu, Li
;
Liang, Shuang
  |  
收藏
  |  
浏览/下载:65/0
  |  
提交时间:2019/06/10
electrical properties
forming gas annealing
high-k gate dielectrics
interface chemistry
metal-oxide-semiconductor capacitors
Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy
期刊论文
OAI收割
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 716, 期号: 无, 页码: 1-6
作者:
He, Gang
;
Jiang, Shanshan
;
Li, Wendong
;
Zheng, Changyong
;
He, Huaxin
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2018/05/25
High-k Gate Dielectric
Atomic-layer-deposition
Interface Stability
Phase Separation
Annealing Temperature
Modulation of interfacial and electrical properties of HfGdO/GaAs gate stacks by ammonium sulfide passivation and rapid thermal annealing
期刊论文
OAI收割
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 704, 期号: 无, 页码: 322-328
作者:
Jiang, S. S.
;
He, G.
;
Liang, S.
;
Zhu, L.
;
Li, W. D.
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2018/07/04
High-k Gate Dielectrics
Interface Chemistry
Xps Electrical Properties
Cmos Devices
Interfacial modulation and electrical properties improvement of solution-processed ZrO2 gate dielectrics upon Gd incorporation
期刊论文
OAI收割
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 699, 期号: 无, 页码: 415-420
作者:
Xiao, D. Q.
;
He, G.
;
Lv, J. G.
;
Wang, P. H.
;
Liu, M.
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2018/07/04
High-k Gate Dielectrics
Gd Incorporation
Xps
Electrical Properties
Sol-gel