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Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
半导体研究所 [6]
长春光学精密机械与物... [2]
金属研究所 [1]
化学研究所 [1]
中国科学院大学 [1]
采集方式
OAI收割 [7]
iSwitch采集 [4]
内容类型
期刊论文 [9]
会议论文 [2]
发表日期
2011 [4]
2008 [2]
2005 [2]
2002 [2]
2000 [1]
学科主题
半导体物理 [2]
光电子学 [1]
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Effect of compensation doping on the electrical and optical properties of mid-infrared type-ii inas/gasb superlattice photodetectors
期刊论文
iSwitch采集
Chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: 6
作者:
Wang Yong-Bin
;
Xu Yun
;
Zhang Yu
;
Yu Xiu
;
Song Guo-Feng
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2019/05/12
Inas/gasb superlattices
P-doping concentration
Electrical and optical properties
Effect of thickness on the structural, electrical and optical properties of ZnO films deposited by MBE (EI CONFERENCE)
会议论文
OAI收割
2011 International Conference on Advanced Design and Manufacturing Engineering, ADME 2011, September 16, 2011 - September 18, 2011, Guangzhou, China
Yang X.
;
Su S.
;
Yi X.
;
Mei T.
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2013/03/25
A set of ZnO films of different thickness have been deposited on sapphire substrates using molecular beam epitaxy (MBE) by varying the growth time and the effect of film thickness on the structural
electrical and optical properties have been investigated. The X-ray diffraction (XRD) results indicate that the full width at half maximum (FWHM) of the (002) diffraction peak is decreased as the film thickness increasing
and the stress along c-axis is stable. Scanning electron microscope (SEM) measurement shows that the grains become more uniform as the film grows thicker and the film surface present distinct hexagon shape as the film is grown up to a thickness of 500nm. The optical absorbance
Hall mobility and photoluminescence (PL) intensity are increased in accordance with the thickness of the film. (2011) Trans Tech Publications
Switzerland.
Growth and characterization of Bi(2)Se(3) thin films by pulsed laser deposition using alloy target
期刊论文
OAI收割
Thin Solid Films, 2011, 卷号: 519, 期号: 22, 页码: 7627-7631
L. J. Meng
;
H. Meng
;
W. J. Gong
;
W. Liu
;
Z. D. Zhang
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2012/04/13
Pulsed laser deposition
Thin films
Bismuth selenide
X-ray
diffraction
Electrical properties and measurements
Surface morphology
Scanning electron microscopy
Crystal microstructure
optical-properties
electrodeposition
photoemission
Effect of compensation doping on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattice photodetectors
期刊论文
OAI收割
chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: art. no. 067302
Wang YB
;
Xu Y
;
Zhang Y
;
Yu X
;
Song GF
;
Chen LH
收藏
  |  
浏览/下载:58/4
  |  
提交时间:2011/07/07
InAs/GaSb superlattices
p-doping concentration
electrical and optical properties
Oxygen pressure dependences of structure and properties of zno films deposited on amorphous glass substrates by pulsed laser deposition
期刊论文
iSwitch采集
Japanese journal of applied physics, 2008, 卷号: 47, 期号: 4, 页码: 2225-2229
作者:
Zhu, Bai Lin
;
Zhao, Xing Zhong
;
Xu, Sheng
;
Su, Fu Hai
;
Li, Guo Hua
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2019/05/12
Laser ablation
Zinc oxide
Deposition process
Optical properties
Electrical properties and measurements
Oxygen pressure dependences of structure and properties of ZnO films deposited on amorphous glass substrates by pulsed laser deposition
期刊论文
OAI收割
japanese journal of applied physics, 2008, 卷号: 47, 期号: 4, 页码: 2225-2229 part 1
Zhu, BL
;
Zhao, XZ
;
Xu, S
;
Su, FH
;
Li, GH
;
Wu, XG
;
Wu, J
;
Wu, R
;
Liu, J
收藏
  |  
浏览/下载:48/2
  |  
提交时间:2010/03/08
laser ablation
zinc oxide
deposition process
optical properties
electrical properties and measurements
Structural, optical and electrical properties of zno films grown by pulsed laser deposition (pld)
期刊论文
iSwitch采集
Journal of crystal growth, 2005, 卷号: 276, 期号: 3-4, 页码: 507-512
作者:
Zhao, JL
;
Li, XM
;
Bian, JM
;
Yu, WD
;
Gao, XD
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2019/05/10
Crystal structure
Pulsed laser deposition
Zno film
Optical and electrical properties
Vacuum annealing effects on properties of ITO films prepared by reactive low voltage ion plating technique (EI CONFERENCE)
会议论文
OAI收割
ICO20: Optical Devices and Instruments, August 21, 2005 - August 26, 2005, Changchun, China
作者:
Wang X.
;
Wang X.
;
Wang X.
;
Zheng X.
;
Gao J.
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2013/03/25
With reactive low voltage ion plating technique
ITO (indium oxide doped with tin) films were deposited on glass substrates by using ITO pellet with a composition of 90 wt.% In2O3 and 10 wt.% SnO2 without extra heating. The post annealing process was done in vacuum with different annealing temperature at 100
200
300 and 400C for 2 hours
respectively. The effects of vacuum annealing on structural
optical and electrical properties of the ITO film deposited by RLVIP were studied in detail. The results showed that the crystalline of the film was improved with the higher temperature. The increase of the annealing temperature improved the infrared reflectivity from 30% to 80% over 8-14m of the infrared atmosphere window
and a simultaneous variation in the optical transmission of the visible spectral region occurred. In addition
sheet resistance of ITO films had contrary changing trend with the IR reflectance
as well.
Optical and electrical characterizations of znse self-organized quantum dots grown by molecular beam epitaxy
期刊论文
iSwitch采集
Acta physica sinica, 2002, 卷号: 51, 期号: 2, 页码: 310-314
作者:
Lu, LW
;
Wang, ZG
;
Yang, CL
;
Wang, J
;
Ma, ZH
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2019/05/12
Ii-vi semiconductor
Self-organized quantum dots
Optical and electrical properties
Optical and electrical characterizations of ZnSe self-organized quantum dots grown by molecular beam epitaxy
期刊论文
OAI收割
acta physica sinica, 2002, 卷号: 51, 期号: 2, 页码: 310-314
Lu LW
;
Wang ZG
;
Yang CL
;
Wang J
;
Ma ZH
;
Sou IK
;
Ge WK
收藏
  |  
浏览/下载:102/10
  |  
提交时间:2010/08/12
II-VI semiconductor
self-organized quantum dots
optical and electrical properties
TEMPERATURE-DEPENDENCE
WELL STRUCTURES
LASER-DIODES
PHOTOLUMINESCENCE
SPECTROSCOPY
EPILAYERS
SURFACE
STATES